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au.\*:("WILLIAMS JS")

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THE MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING.WILLIAMS JS.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 2; PP. 85-86; BIBL. 6 REF.Article

A SYNTHETIC BASIS FOR A COMPREHENSIVE FACTOR-ANALYSIS THEORYWILLIAMS JS.1979; BIOMETRICS; USA; DA. 1979; VOL. 35; NO 4; PP. 719-733; BIBL. 2 P.Article

THE SIGNIFICANCE OF ION IMPLANTATION INDUCED STRESS IN SILICON.WILLIAMS JS.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 60; NO 4; PP. 330-332; BIBL. 19 REF.Article

FOSSIL DISTRIBUTION ACROSS THE MIDDLE-UPPER DEVONIAN BOUNDARY, PORTAGE AND LOGAN CANYONS, NORTH-CENTRAL UTAHWILLIAMS JS.1973; GEOL. SOC. AMER., BULL.; U.S.A. ; 1973, VOL. 84, NUM. 0005, P. 1699 A 1704Serial Issue

STAVROGIN'S MOTIVATION: LOVE AND SUICIDEWILLIAMS JS.1982; PSYCHOANAL. REV. (1963); ISSN 0033-2836; USA; DA. 1982; VOL. 69; NO 2; PP. 249-265; BIBL. 1 P.Article

EFFICIENT ANALYSIS OF WEIBULL SURVIVAL DATA FROM EXPERIMENTS ON HETEROGENEOUS PATIENT POPULATIONSWILLIAMS JS.1978; BIOMETRICS; USA; DA. 1978; VOL. 34; NO 2; PP. 209-222; ABS. FRA; BIBL. 14 REF.Article

A DEFINITION FOR THE COMMON-FACTOR ANALYSIS MODEL AND THE ELIMINATION OF PROBLEMS OF FACTOR SCORE INDETERMINACYWILLIAMS JS.1978; PSYCHOMETRIKA; USA; DA. 1978; VOL. 43; NO 3; PP. 293-306; BIBL. 7 REF.Article

COMPUTER-CONTROLLER SAVES FUEL AT GAS PLANTWILLIAMS JS.1978; OIL GAS J.; USA; DA. 1978; VOL. 76; NO 45; PP. 72-81; (4 P.)Article

CANONICAL ANALYSIS: A FACTOR-ANALYTIC METHOD OF COMPARING FINITE DISCRETE DISTRIBUTION FUNCTIONSWILLIAMS JS.1978; J. AMER. STATIST. ASS.; USA; DA. 1978; VOL. 73; NO 364; PP. 781-786; BIBL. 3 REF.Article

A NOTE ON THE UNIQUENESS OF MINIMUM RANK SOLUTIONS IN FACTOR ANALYSISWILLIAMS JS.1981; PSYCHOMETRIKA; ISSN 0033-3123; USA; DA. 1981; VOL. 46; NO 1; PP. 109-110; BIBL. 2 REF.Article

ASPECTS OF DEPENDENCE-INDEPENDENCE CONFLICT IN CHILDREN WITH ASTHAMA. = ASPECTS DU CONFLIT DEPENDANCE-INDEPENDANCE CHEZ LES ENFANTS AYANT DE L'ASTHMEWILLIAMS JS.1975; J. CHILD PSYCHOL. PSYCHIATRY; G.B.; DA. 1975; VOL. 16; NO 3; PP. 199-218; BIBL. 1 P.Article

A STATISTICAL MODEL AND ANALYSIS FOR GENETIC AND ENVIRONMENTAL EFFECTS IN RESPONSES FROM TWIN-FAMILY STUDIESWILLIAMS JS; IYER H.1981; ACTA GENET. MED. GEMELLOL.; ISSN 0001-5660; ITA; DA. 1981; VOL. 30; NO 1; PP. 9-38; BIBL. 21 REF.Article

THE MULTI-TANH CIRCUIT AS A TRIWAVE-TO-SINE CONVERTOREVANS WA; WILLIAMS JS.1979; IEE J. ELECTRON. CIRCUITS SYST.; GBR; DA. 1979; VOL. 3; NO 3; PP. 90-92; BIBL. 7 REF.Article

EFFECT OF PLANAR OSCILLATIONS ON IMPLANTED DISTRIBUTIONS MEASURED BY LOW-ANGLE HE+ BACKSCATTERING.WAGH AG; WILLIAMS JS.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 65; NO 2; PP. 175-176; BIBL. 8 REF.Article

NEAR-SURFACE REGROWTH RATE EFFECTS IN HIGH-DOSE ION-IMPLANTED (100) SILICONWILLIAMS JS; ELLIMAN RG.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 9; PP. 829-831; BIBL. 12 REF.Article

ON THE DETERMINATION OF OPTIMUM DEPTH-RESOLUTION CONDITIONS FOR RUTHERFORD BACKSCATTERING ANALYSISWILLIAMS JS; MOLLER W.1978; NUCL. INSTRUM. METHODS; NLD; DA. 1978; VOL. 157; NO 2; PP. 213-221; BIBL. 18 REF.Article

SAMPLE-SIZE REQUIREMENTS FOR CONFIDENCE BOUNDS OF PRESCRIBED PRECISION ON MULTIVARIATE NORMAL QUANTILESPASSI RM; WILLIAMS JS.1978; COMMUNIC. STATIST., THEORY METHODS; USA; DA. 1978; VOL. 7; NO 8; PP. 739-753; BIBL. 4 REF.Article

THE DAMAGE DEPENDENCE OF THE EPITAXIAL REGROWTH RATE DURING THE ANNEALING OF AMORPHOUS SILICON FORMED BY ION IMPLANTATION.BEANLAND DG; WILLIAMS JS.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 15-21; BIBL. 29 REF.Article

THE MODIFICATION OF SURFACE LAYERS BY ION IMPLANTATION.GRANT WA; WILLIAMS JS.1976; SCI. PROGR.; G.B.; DA. 1976; VOL. 63; NO 249; PP. 27-64; BIBL. 2 P. 1/2Article

METASTABLE DOPING BEHAVIOR IN ANTIMONY-IMPLANTED (100) SILICONWILLIAMS JS; SHORT KT.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8663-8667; BIBL. 22 REF.Article

ABSTINENCE FROM ALCOHOL: SOME IMPLICATIONS FOR EPIDEMIOLOGY OF ALCOHOL PROBLEMSSINGH BK; WILLIAMS JS.1982; INT. J. ADDICT.; ISSN 0020-773X; USA; DA. 1982; VOL. 17; NO 6; PP. 1055-1063; BIBL. 14 REF.Article

LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION IMPLANTED AMORPHOUS GAASWILLIAMS JS; AVSTIN MW.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 12; PP. 994-996; BIBL. 10 REF.Article

RANDOMIZATION TEST FOR FACTORIAL DESIGNSWU SC; WILLIAMS JS.1972; IN: COMPUT. SCI. STAT. 5TH ANNU. SYMP. INTERFACE. STILLWATER, OKLA, 1971. PROC.; S.L.; OKLAHOMA STATE UNIV.; DA. 1972; PP. 158-162; BIBL. 6 REF.Conference Paper

THE LATERAL SPREAD OF MEV HELIUM IONS IN CARBON, ALUMINUM, AND COPPERMOLLER W; WILLIAMS JS.1978; NUCL. INSTRUM. METHODS; NLD; DA. 1978; VOL. 157; NO 2; PP. 205-211; BIBL. 27 REF.Article

SUBSTITUTIONAL SOLID SOLUBILITY LIMITS DURING SOLID PHASE EPITAXY OF ION IMPLANTED (100) SILICONWILLIAMS JS; ELLIMAN RG.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 266-268; BIBL. 16 REF.Article

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