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COMPARISON OF INTERFACE-STATE BUILDUP IN MOS CAPACITORS SUBJECTED TO PENETRATING AND NONPENETRATING RADIATION.WINOKUR PS; SOKOLOSKI MM.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 10; PP. 627-630; BIBL. 22 REF.Article

TWO-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATESWINOKUR PS; BOESCH HE JR; MCGARRITY JM et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3492-3494; BIBL. 11 REF.Article

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