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INTERFACIAL REACTIONS BETWEEN ALUMINIUM AND TRANSITION-METAL NITRIDE AND CARBIDE FILMS = REACTIONS D'INTERFACE ENTRE AL ET LES FILMS DE CARBURE ET DE NITRURE DES METAUX DE TRANSITIONWITTMER M.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1007-1012; BIBL. 16 REF.Article

HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR DEVICESWITTMER M.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 540-542; BIBL. 17 REF.Article

TIN AND TAN AS DIFFUSION BARRIERS IN METALLIZATIONS TO SILICON SEMICONDUCTOR DEVICESWITTMER M.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 456-458; BIBL. 7 REF.Article

Carrier recombination and high-barrier Schottky diodes on siliconWITTMER, M.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 6, pp 451-454, issn 0721-7250, 4 p.Article

A STUDY OF SILICIDE FORMATION BY LASER IRRADIATIONWITTMER M; VON ALLMEN M.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4786-4790; BIBL. 9 REF.Article

Conduction mechanism in PtSi/Si Schottky diodesWITTMER, M.Physical review. B, Condensed matter. 1991, Vol 43, Num 5, pp 4385-4395, issn 0163-1829, 11 p.Article

Self-aligned diffusion barrier by nitridation of TiSi2WITTMER, M.Applied physics letters. 1988, Vol 52, Num 19, pp 1573-1575, issn 0003-6951Article

LASER ANNEALING OF SEMICONDUCTORS: MECHANISMS AND APPLICATIONS IN MICROELECTRONICSWITTMER M; ROZGONYI GA.1982; CURRENT TOPICS IN MATERIALS SCIENCE; ISSN 0165-1854; NLD; DA. 1982; VOL. 8; PP. 1-93; BIBL. 280 REF.Article

THE REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATIONWITTMER M; SEIDEL TE.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 5827-5834; BIBL. 32 REF.Article

Current transport in high-barrier IrSi/Si Schottky diodesWITTMER, M.Physical review. B, Condensed matter. 1990, Vol 42, Num 8, pp 5249-5259, issn 0163-1829Article

Growth kinetics pf platinum silicideWITTMER, M.Journal of applied physics. 1983, Vol 54, Num 9, pp 5081-5086, issn 0021-8979Article

GROWTH KINETICS AND DIFFUSION MECHANISM IN PD2SIWITTMER M; TU KN.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 2; PP. 1173-1179; BIBL. 24 REF.Article

MEDIUM POWER DIODES WITH CONTACTS FORMED BY LASER IRRADIATIONLUTHY W; WITTMER M.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 80; NO 1; PP. 96-98; BIBL. 8 REF.Article

DYNAMICS OF LASER-INDUCED FORMATION OF PALLADIUM SILICIDEVON ALLMEN M; WITTMER M.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 68-70; BIBL. 12 REF.Article

EXCITON-CHARGE CARRIER INTERACTIONS IN THE ELECTROLUMINESCENCE OF CRYSTALLINE ANTHRACENE.WITTMER M; ZSCHOKKE GRANACHER I.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 63; NO 10; PP. 4187-4194; BIBL. 23 REF.Article

INVESTIGATION OF THE AL/TISI2/SI CONTACT SYSTEMCHUNG YU TING; WITTMER M.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 937-943; BIBL. 21 REF.Article

LASER INDUCED REACTION OF MAGNESIUM WITH SILICONWITTMER M; LUTHY W; VON ALLMEN M et al.1979; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1979; VOL. 75; NO 1-2; PP. 127-130; BIBL. 12 REF.Article

THE INFLUENCE OF NOBLE GAS ATOMS ON THE EPITAXIAL GROWTH OF IMPLANTED AND SPUTTERED AMORPHOUS SILICONWITTMER M; ROTH J; MAYER JW et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1247-1252; BIBL. 8 REF.Article

THE FIRST PHASE TO NUCLEATE PLANAR TRANSITION METAL-GERMANIUM INTERFACES.WITTMER M; NICOLET MA; MAYER JW et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 42; NO 1; PP. 51-59; BIBL. 3 REF.Article

INTERFERENCE EFFECTS ON THE SURFACE OF ND: YAG-LASER-REACTED PD-SILICIDEAFFOLTER K; LUETHY W; WITTMER M et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 559-561; BIBL. 7 REF.Article

ELECTRICAL CHARACTERISTICS OF TIN CONTACTS TO N SILICONWITTMER M; STUDER B; MELCHIOR H et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5722-5726; BIBL. 16 REF.Article

THE THERMAL STABILITY OF LASER-PRODUCED SILICIDE LAYERSWITTMER M; LUETHY W; VON ALLMEN M et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5386-5389; BIBL. 32 REF.Article

CHARACTERISTICS OF TIN GATE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORSWITTMER M; NOSER JR; MELCHIOR H et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 3; PP. 1423-1428; BIBL. 29 REF.Article

OXIDATION KINETICS OF TIN THIN FILMSWITTMER M; NOSER J; MELCHIOR H et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6659-6664; BIBL. 23 REF.Article

OXIDATION OF TI THIN FILMS DEPOSITED ON VITREOUS CARBON = OXYDATION DES FILMS MINCES DE TI DEPOSES SUR CARBONE VITREUXMUELLER R; WITTMER M; STUCKI S et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 7; PP. 1537-1540; BIBL. 10 REF.Article

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