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au.\*:("WOODALL JM")

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A NEW TECHNIQUE FOR GETTERING OXYGEN AND MOISTURE FROM GASES USED IN SEMICONDUCTOR PROCESSINGSHEALY JR; WOODALL JM.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 88-90; BIBL. 5 REF.Article

HIGH-EFFICIENCY GA1-XALXAS-GAAS SOLAR CELLSWOODALL JM; HOVEL HJ.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 8; PP. 379-381; BIBL. 8 REF.Serial Issue

LPE GROWTH OF GAAS-1-XALXAS SOLAR CELLS.WOODALL JM; HOVEL HJ.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 39; NO 1; PP. 108-116; BIBL. 16 REF.Article

AN ISOTHERMAL ETCHBACK-REGROWTH METHOD FOR HIGH-EFFICIENCY GA1-XALXAS-GAAS SOLAR CELLS.WOODALL JM; HOVEL HJ.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 9; PP. 492-493; BIBL. 9 REF.Article

PHOTON RECYCLING IN SEMICONDUCTOR LASERS.STERN F; WOODALL JM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3904-3906; BIBL. 10 REF.Article

GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH FREQUENCY OPERATIONDUMKE WP; WOODALL JM; RIDEOUT VL et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1339-1343; H.T. 1; BIBL. 12 REF.Serial Issue

DENDRITIC TUNGSTEN FOR SOLAR THERMAL CONVERSION.CUOMO JJ; WOODALL JM; DISTEFANO TH et al.1976; IN: COATINGS SOL. COLLECT. SYMP.; ATLANTA, GA.; 1976; WINTER PARK, FLA.; AMERICAN ELECTROPLATERS' SOC.; DA. 1976; PP. 133-138; BIBL. 7 REF.Conference Paper

LIQUID PHASE EPITAXY.BLOM GM; BLANK SL; WOODALL JM et al.1974; AMSTERDAM NORTH-HOLLAND; 1974, P. 1 A 332Book

RAMAN SCATTERING CHARACTERIZATION OF GA1-X ALXAS/GAAS HETEROJUNCTIONS: EPILAYER AND INTERFACEPARAYANTHAL P; POLLAK FH; WOODALL JM et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 961-963; BIBL. 13 REF.Article

PHOTOLUMINESCENT CHARACTERIZATION OF GAAS SOLAR CELLSPETTIT GD; WOODALL JM; HOVEL HJ et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 4; PP. 335-337; BIBL. 7 REF.Article

PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR PRESSURE SOURCEWOODALL JM; RUPPRECHT H; CHICOTKA RJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 8; PP. 639-641; BIBL. 20 REF.Article

VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED COMPOUNDS GROWN BY MOLECULAR BEAM EPITAXYKIRCHNER PD; WOODALL JM; FREEOUF JL et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 427-429; BIBL. 9 REF.Article

EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS: SIZE EFFECTSFREEOUF JL; JACKSON TN; LAUX SE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 634-636; BIBL. 10 REF.Article

CONTACT REACTIONS IN PD/GAAS JUNCTIONSOLOWOLAFE JO; HO PS; HOVEL HJ et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 955-962; BIBL. 20 REF.Article

THE FORMATION OF GA1-XALXAS LAYERS ON THE SURFACE OF GAAS DURING CONTINUAL DISSOLUTION INTO GA-AL-AS SOLUTIONSSMALL MB; GHEZ R; POTEMSKI RM et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 3; PP. 209-210; BIBL. 11 REF.Article

PROCEEDINGS OF THE TWELFTH ANNUAL SYMPOSIUM OF THE GREATER NEW YORK CHAPTER OF THE AVS ON METALLIZATION OF ADVANCED SEMICONDUCTOR DEVICES, 3 JUNE 1981, MURRAY HILL, NEW JERSEYVOSSEN JL ED; WOODALL JM ED.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 3; PP. 760-810; BIBL. DISSEM.Conference Paper

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