Synthesis and characterization of inorganic fullerene-like WSe₂ materialTSIRLINA, T; FELDMAN, Y; HOMYONFER, M et al.Fullerene science and technology. 1998, Vol 6, Num 1, pp 157-165, issn 1064-122XArticle

Thermal Expansion, Anharmonicity and Temperature-Dependent Raman Spectra of Single- and Few-Layer MoSe₂ and WSe₂LATE, Dattatray J; SHIRODKAR, Sharmila N; WAGHMARE, Umesh V et al.ChemPhysChem (Print). 2014, Vol 15, Num 8, pp 1592-1598, issn 1439-4235, 7 p.Article

Nanoscale characterization of semiconductor surfaces by spatially resolved photocurrent measurementsHIESGEN, R; MEISSNER, D.Fresenius' journal of analytical chemistry. 1997, Vol 358, Num 1-2, pp 54-58, issn 0937-0633Conference Paper

Control of Schottky Barriers in Single Layer MoS₂ Transistors with Ferromagnetic ContactsCHEN, Jen-Ru; ODENTHAL, Patrick M; SWARTZ, Adrian G et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3106-3110, issn 1530-6984, 5 p.Article

Studies on In-pWSe₂ Schottky diode by current-voltage-temperature methodMATHAI, Achamma John; PATEL, K. D; SRIVASTAVA, R et al.Thin solid films. 2010, Vol 518, Num 15, pp 4417-4424, issn 0040-6090, 8 p.Article

Adsorption of Br₂ on Na-intercalated n-WSe₂ : Br-induced deintercalationKAMARATOS, M; PAPAGEORGOPOULOS, C. A; PAPAGEORGOPOULOS, D. C et al.Surface science. 1997, Vol 377-79, pp 659-663, issn 0039-6028Conference Paper

Synthesized tungsten diselenide thin films : Preparation and characterizationKHELIL, A; ESSAIDI, H; BERNEDE, J. C et al.Annales de chimie (Paris. 1914). 1996, Vol 21, Num 5, pp 295-300, issn 0151-9107Article

On the nature of nanometer-scale ring structures in the scanning tunneling microscopy images of tungsten diselenide WSe₂MAGONOV, S. N; CANTOW, H.-J; WHANGBO, M.-H et al.Surface science. 1994, Vol 318, Num 1-2, pp L1175-L1180, issn 0039-6028Article

Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenidesKUMAR, Ashok; AHLUWALIA, P. K.Journal of alloys and compounds. 2014, Vol 587, pp 459-467, issn 0925-8388, 9 p.Article

Dependence of the electrochemical behavior of p-WSe₂ single crystals on ohmic contactsDESHPANDE, M. P; AGARWAL, M. K; PATEL, P. D et al.Journal of materials science letters. 1999, Vol 18, Num 3, pp 233-235, issn 0261-8028Article

Localized photoelectrochemical etching with micrometric lateral resolution on transition metal diselenide photoelectrodesCHAPARRO, A. M; SALVADOR, P; MIR, A et al.Journal of electroanalytical chemistry (1992). 1997, Vol 422, Num 1-2, pp 35-44, issn 1572-6657Article

Contribution à l'obtention et à la caractérisation de couches minces de WSe₂ pour applications au photovoltaïque = Contribution to obtention and to characterization of WSe₂ thin films, for application to photovoltaic cellsEssaidi, Hatem; Bernede, J.-C.1995, 132 p.Thesis

A photoemission study of barrier and transport properties of the interfaces of Au and Cu with WSe₂(0001) surfacesKLEIN, A; PETTENKOFER, C; JAEGERMANN, W et al.Surface science. 1994, Vol 321, Num 1-2, pp 19-31, issn 0039-6028Article

WSe₂ thin-film realization by synthesis and by tarnishingKHELIL, A; ESSAIDI, H; BERNEDE, J. C et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 41, pp 8527-8537, issn 0953-8984Article

Collection efficiency of photoexcited carriers of electrochemically etched surfaceNABUTOVSKY, V. M; EHERMAN, K; TENNE, R et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2866-2870, issn 0021-8979Article

Schottky barriers on layered semiconductors : a comparison between van der Waals and non van der Waals facesKLEIN, A; LEHMANN, J; PETTENKOFER, C et al.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 470-474, issn 0169-4332, BConference Paper

Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption GatingTONGAY, Sefaattin; JIAN ZHOU; ATACA, Can et al.Nano letters (Print). 2013, Vol 13, Num 6, pp 2831-2836, issn 1530-6984, 6 p.Article

Interlayer Breathing and Shear Modes in Few-Trilayer MoS₂ and WSe₂YANYUAN ZHAO; XIN LUO; QIHUA XIONG et al.Nano letters (Print). 2013, Vol 13, Num 3, pp 1007-1015, issn 1530-6984, 9 p.Article

Tunable dielectric response of transition metals dichalcogenides MX₂ (M=Mo, W; X=S, Se, Te): Effect of quantum confinementKUMAR, Ashok; AHLUWALIA, P. K.Physica. B, Condensed matter. 2012, Vol 407, Num 24, pp 4627-4634, issn 0921-4526, 8 p.Article

WSe₂ nanotubes : Their formation by electron irradiationGALVAN, D. H; RANGEL, R; ADEM, E et al.Fullerene science and technology. 2000, Vol 8, Num 1-2, pp 9-15, issn 1064-122XArticle

Defect and ordered tungsten oxides encapsulated inside 2H-WX₂(X = S and Se) fullerene-related structuresSLOAN, J; HUTCHISON, J. L; TENNE, R et al.Journal of solid state chemistry (Print). 1999, Vol 144, Num 1, pp 100-117, issn 0022-4596Article

Adsorption of Cs on WSe₂(0 0 0 1) at low temperatureKAMARATOS, M.Solid state communications. 1997, Vol 103, Num 3, pp 189-192, issn 0038-1098Article

Surface analysis and photoelectrochemical studies of mixed polycrystals of p-WSe₂/WS₂SANTIAGO-ORTIZ, Y; TORRES, G. I; DIAZ, A et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 8, pp 2770-2776, issn 0013-4651Article

Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfacesSCHLAF, R; KLEIN, A; PETTENKOFER, C et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 19, pp 14242-14252, issn 0163-1829Article

Structure and mechanical properties of W-Se-C/diamond-like carbon and W―Se/diamond-like carbon bi-layer coatings prepared by pulsed laser depositionFOMINSKI, V. Yu; GRIGORIEV, S. N; CELIS, J. P et al.Thin solid films. 2012, Vol 520, Num 21, pp 6476-6483, issn 0040-6090, 8 p.Article