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Temperature and duration effects on microstructure evolution during copper wafer bondingCHEN, K. N; FAN, A; TAN, C. S et al.Journal of electronic materials. 2003, Vol 32, Num 12, pp 1371-1374, issn 0361-5235, 4 p.Conference Paper

The bonding energy control: An original way to debondable substratesMORICEAU, H; RAYSSAC, O; ASPAR, B et al.Proceedings - Electrochemical Society. 2003, pp 49-56, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Semiconductor wafer bonding VIII : science, technology, and applications (Quebec PQ, 15-20 May 2005)Hobart, K.D; Bengtsson, S; Baumgart, H et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-460-8, X, 462 p, isbn 1-56677-460-8Conference Proceedings

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Improved low-temperature Si-Si hydrophilic wafer bondingESSER, R. H; HOBART, K. D; KUB, F. J et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 3, pp G228-G231, issn 0013-4651Article

Wafer bonding and layer transfer processes for 4-junction high efficiency solar cellsZAHLER, James M; FONTCUBERTA I. MORRAL, Anna; AHN, Chang-Geun et al.sans titre. 2002, pp 1039-1042, isbn 0-7803-7471-1, 4 p.Conference Paper

Bonding techniques for silicon microsensorsGUPTA, Amita; SINGH, Ranvir; KUMAR, Mahesh et al.SPIE proceedings series. 2002, pp 519-522, isbn 0-8194-4500-2, 2VolConference Paper

Silicon Carbide on Insulator (SiCOI) structures by direct wafer bonding processCHANDRA, Sudhir; NAGASAWA, Hiroyuki.SPIE proceedings series. 2002, pp 491-496, isbn 0-8194-4500-2, 2VolConference Paper

Interferometric optical isolator with Si guiding layer fabricated by wafer bondingYOKOI, Hideki.Journal of luminescence. 2006, Vol 121, Num 2, pp 391-393, issn 0022-2313, 3 p.Conference Paper

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor methodMINAMI, K; NAKAMURA, Y; YAMASAKA, S et al.Thin solid films. 2012, Vol 520, Num 8, pp 3232-3235, issn 0040-6090, 4 p.Conference Paper

Investigations of strength of copper-bonded wafers with several quantitative and qualitative testsCHEN, K. N; CHANG, S. M; SHEN, L. C et al.Journal of electronic materials. 2006, Vol 35, Num 5, pp 1082-1086, issn 0361-5235, 5 p.Article

Wafer bonding of highly oriented diamond to siliconYUSHIN, G. N; ALEKSOV, A; WOLTER, S. D et al.Diamond and related materials. 2004, Vol 13, Num 10, pp 1816-1821, issn 0925-9635, 6 p.Article

Low-temperature wafer bonding for MEMS packaging utilizing screen-printed sub-micron size Au particle patternsISHIZUK, S; AKIYAMA, N; OGASHIWA, T et al.Microelectronic engineering. 2011, Vol 88, Num 8, pp 2275-2277, issn 0167-9317, 3 p.Conference Paper

A Si/SiGe MOSFET utilizing low-temperature wafer bondingKOLIOPOULOU, S; DIMITRAKIS, P; GOUSTOURIDIS, D et al.Microelectronic engineering. 2005, Vol 78-79, pp 244-247, issn 0167-9317, 4 p.Conference Paper

Copper bonded layers analysis and effects of copper surface conditions on bonding quality for three-dimensional integration : Microstructures and textures of films and coatings and refractory metals in electronic applicationsCHEN, K. N; TAN, C. S; FAN, A et al.Journal of electronic materials. 2005, Vol 34, Num 12, pp 1464-1467, issn 0361-5235, 4 p.Conference Paper

Modeling the formation of spontaneous wafer direct bonding under low temperatureZIRONG TANG; TIELIN SHI; GUANGLAN LIAO et al.Microelectronic engineering. 2008, Vol 85, Num 8, pp 1754-1757, issn 0167-9317, 4 p.Article

Characterization of bonding structures of directly bonded hybrid crystal orientation substratesTOYODA, E; SAKAI, A; NAKATSUKA, O et al.Thin solid films. 2008, Vol 517, Num 1, pp 323-326, issn 0040-6090, 4 p.Conference Paper

Effect of nanotopography in direct wafer bonding : Modeling and measurementsTURNER, K. T; SPEARING, S. M; BAYLIES, W. A et al.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 2, pp 289-296, issn 0894-6507, 8 p.Article

High-Temperature Spin-On Adhesives for Temporary Wafer BondingPILLALAMARRI, S; PULIGADDA, R; BRUBAKER, C et al.Journal of microelectronics and electronic packaging. 2007, Vol 4, Num 3, pp 105-111, issn 1551-4897, 7 p.Article

Fabricating a hollow optical waveguide for optical communication applicationsLO, Shih-Shou; CHEN, Chii-Chang; HSU, Shih-Chieh et al.Journal of microelectromechanical systems. 2006, Vol 15, Num 3, pp 584-587, issn 1057-7157, 4 p.Article

Characterization of low-temperature wafer bonding using thin-film paryleneKIM, Hanseup; NAJAFI, Khalil.Journal of microelectromechanical systems. 2005, Vol 14, Num 6, pp 1347-1355, issn 1057-7157, 9 p.Article

Wafer-Level Cu/Sn to Cu/Sn SLID-Bonded Interconnects with Increased StrengthHE LIU; SALOMONSEN, Guttorm; KAIYING WANG et al.IEEE transactions on components, packaging, and manufacturing technology (2011. Print). 2011, Vol 1, Num 9-10, pp 1350-1358, issn 2156-3950, 9 p.Article

Wafer-to-Wafer Alignment for Three-Dimensional Integration: A ReviewLEE, Sang Hwui; CHEN, Kuan-Neng; LU, James Jian-Qiang et al.Journal of microelectromechanical systems. 2011, Vol 20, Num 4, pp 885-898, issn 1057-7157, 14 p.Article

Deformation of bowed silicon chips due to adhesion and applied pressurePAMP, Andy; ADAMS, George G.Journal of adhesion science and technology. 2007, Vol 21, Num 11, pp 1021-1043, issn 0169-4243, 23 p.Article