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ELECTRON BEAM AND X-RAY LITHOGRAPHY UPDATE.PIWCZYK BP.1978; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1978; VOL. 18; NO 5; PP. 36-51 (10P.); BIBL. 18 REF.Article

ENDUITS SENSIBLES AUX RX POUR LA LITHOGRAPHIE AU-DESSOUS DU MICRONALEKSANDROV YU M; VALIEV KA; VELIKOV LV et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 1; PP. 3-10; BIBL. 12 REF.Article

X-RAY LITHOGRAPHYWATTS RK.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 5; PP. 68-82; (5 P.); BIBL. 21 REF.Article

ELECTRON-BEAM EXPOSURE SYSTEMS PROVIDE BETTER QUALITY MASKS FASTER.MIYAUCHI S.1978; J. ELECTRON. ENGNG; JAP.; DA. 1978; NO 135; PP. 60-62Article

REPLICATION OF 175-A LINES AND SPACES IN POLYMETHYLMETHACRYLATE USING X-RAY LITHOGRAPHYFLANDERS DC.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 93-96; BIBL. 18 REF.Article

A NEW TRANSMISSION TARGET FOR THE X-RAY LITHOGRAPHY SOURCEOKADA K.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 5; PP. 1233-1236; BIBL. 12 REF.Article

HARD RADIATION EFFECTS IN X-RAY LITHOGRAPHYZNAMIROWSKI Z; CZARCZYNSKI W.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 5; PP. 178-179; BIBL. 2 REF.Article

HIGH ACCURACY X-RAY LITHOGRAPHY SYSTEMYAMAZAKI S; NAKAYAMA S; ISHIHARA S et al.1980; BULL. JPN. SOC. PRECIS. ENG.; ISSN 0582-4206; JPN; DA. 1980; VOL. 14; NO 3; PP. 137-142; BIBL. 8 REF.Article

X-RAY LITHOGRAPHY.SMITH HJ; FLANDERS DC.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 61-65; BIBL. 26 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

LITHOGRAPHIE RXNAKAYAMA S; HAYASAKA T.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 8; PP. 758-768; ABS. ANGL.; BIBL. 39 REF.Article

HIGH BRIGHTNESS RING CATHODE ROTATING ANODE SOURCE FOR X-RAY LITHOGRAPHYWARDLY GA; MUNRO E; SCOTT RW et al.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 217-220; ABS. FRE; BIBL. 9 REF.Conference Paper

X-RAY LITHOGRAPHY: ON POSSIBLE SOLUTION TO VLSI DEVICE FABRICATIONMAYDAN D; COQUIN GA; MALDONADO JR et al.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 195-199; ABS. FRE; BIBL. 10 REF.Conference Paper

SUBMICRON-RESOLUTION EUTECTIC THIN-FILM MASKCLINE HE.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 12; PP. 1098-1100; BIBL. 7 REF.Article

GRUNDLAGEN DER MIKROELEKTRONIK. II = LES BASES DE LA MICROELECTRONIQUE. IIMOSCHWITZER A.1982; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1982; VOL. 32; NO 8; PP. 329-332Article

NEUE LITHOGRAFIEVERFAHREN IN DER HALBLEITERTECHNIK = NOUVELLES METHODES LITHOGRAPHIQUES DANS LA TECHNIQUE DES SEMICONDUCTEURSHANNO S.1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 11; PP. 59-66; BIBL. 9 REF.Article

LITHOGRAPHIE PAR RAYONS X.FAY B; TROTEL J.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 225-230; ABS. ANGL.; BIBL. 11 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

X-RAY LITHOGRAPHY FOR IC PROCESSING.HUGHES GP.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 5; PP. 39-42; BIBL. 5 REF.Article

A SIMPLE SET-UP FOR MAKING MULTI LAYER STRUCTURES BY X-RAY LITHOGRAPHYHUNDT E; TISCHER P.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 211-215; ABS. FREConference Paper

DIE ROENTGENLITHOGRAPHIE - EIN STRUKTURIERUNGSVERFAHREN ZUR HERSTELLUNG VON SUBMIKROMETERBAUELEMENTEN = LA LITHOGRAPHIE RX - UN PROCEDE STRUCTURAL POUR LA FABRICATION DE COMPOSANTS SUBMICROMETRIQUESPRINGER R.1980; NACHR.-TECH., ELEKTRON.; DDR; DA. 1980; VOL. 30; NO 1; PP. 12-15; BIBL. 15 REF.Article

ZUR MIKROLITHOGRAPHIE FUER PLANARE BAUELEMENTE = LA REALISATION DE COMPOSANTS PLANAR PAR MICROLITHOGRAPHIEHERSENER J; RICKER T.1979; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DEU; DA. 1979; VOL. 52; NO 1-2; PP. 139-147; ABS. ENG; BIBL. 32 REF.Article

AN OVERVIEW OF E-BEAM MASK-MAKINGREYNOLDS JA.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 8; PP. 87-94; BIBL. 6 REF.Article

PREPARATION OF X-RAY LITHOGRAPHY MASKS USING A TUNGSTEN REACTIVE ION ETCHING PROCESSRANDALL JN; WOLFE JC.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 247-248; BIBL. 9 REF.Article

POSITIVE TYPE RESISTS FOR MICROFABRICATIONKAKUCHI M; SUGAWARA S; SUKEGAWA K et al.1979; REV. ELECTR. COMMUNIC. LAB.; JPN; DA. 1979; VOL. 27; NO 11-12; PP. 1113-1118; BIBL. 8 REF.Article

X-RAY LITHOGRAPHY: TECHNOLOGY UPDATE.WARDLY GA; FEDER R; HOFER D et al.1978; CIRCUITS MANUF.; U.S.A.; DA. 1978; VOL. 18; NO 1; PP. 30-40 (8P.); BIBL. 22 REF.Article

LITHOGRAPHY AND MICROSCOPY WITH X-RAYS.SPILLER E; FEDER R; TOPALIAN J et al.1977; PHYS. IN TECHNOL.; G.B.; DA. 1977; VOL. 8; NO 1; PP. 22-28; BIBL. 18 REF.Article

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