Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("YACOUBI, N")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 23 of 23

  • Page / 1
Export

Selection :

  • and

SYNTHESIS OF RARE EARTH MONOXIDESLEGER JM; YACOUBI N; LORIERS J et al.1981; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1981; VOL. 36; NO 3; PP. 261-270; BIBL. 27 REF.Article

SYNTHESIS OF NEODYMIUM AND SAMARIUM MONOXIDES UNDER HIGH PRESSURELEGER JM; YACOUBI N; LORIERS J et al.1980; INORG. CHEM.; ISSN 0020-1669; USA; DA. 1980; VOL. 19; NO 8; PP. 2252-2254; BIBL. 15 REF.Article

SYNTHESE DES MONOXYDES DE CERIUM ET DE PRASEODYMELEGER JM; YACOUBI N; LORIERS J et al.1979; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1979; VOL. 14; NO 11; PP. 1431-1436; ABS. ENG; BIBL. 9 REF.Article

Determination of very thin semiconductor layer thickness by a photothermal methodYACOUBI, N; ALIBERT, C.Journal of applied physics. 1991, Vol 69, Num 12, pp 8310-8312, issn 0021-8979Article

Determination of optical and thermal properties of the GaAsSb/GaAs heterostructure by photothermal deflection spectroscopyYACOUBI, N; MANI, H.Springer series in optical sciences. 1990, Vol 62, pp 173-176, issn 0342-4111Conference Paper

Static and low-frequency noise characterization in submicron MOSFETs for memories cells applicationsSGHAIER, Na; TRABELSI, M; SGHAIER, Ne et al.Microelectronics journal. 2006, Vol 37, Num 11, pp 1399-1403, issn 0959-8324, 5 p.Article

IR characterization of graphite black-coating for cryogenic detectorsMELLOUKI, I; BENNAJI, N; YACOUBI, N et al.Infrared physics & technology. 2007, Vol 50, Num 1, pp 58-62, issn 1350-4495, 5 p.Article

Deposition and characterization of graphite-black coating for absolute pyroelectric detectorsMELLOUKI, I; TOUAYAR, O; KTARI, T et al.Infrared physics & technology. 2004, Vol 45, Num 4, pp 273-279, issn 1350-4495, 7 p.Article

Photothermal deflection investigation of bulk Si and GaSb transport propertiesILAHI, S; SAADALAH, F; YACOUBI, N et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 110, Num 2, pp 459-464, issn 0947-8396, 6 p.Article

Quantitave alternative method of determining hardness of carburized steel annealed or quenched by a CO2-laser on the basis of carbon-dependent correlation between hardness and thermal diffusivityBOUBAKER, K. M; BOUHAFS, M; YACOUBI, N et al.Russian journal of nondestructive testing. 2003, Vol 39, Num 3, pp 232-241, issn 1061-8309, 10 p.Article

Optical and thermal properties of doped semiconductorABROUG, S; SAADALLAH, F; YACOUBI, N et al.The European physical journal. Special topics. 2008, Vol 153, pp 29-32, 4 p.Conference Paper

Conductivité thermique et diffusivité thermique des semiconducteurs : détermination par la méthode photothermique = Thermal conductivity and thermal diffusivity of semiconductors :determination by photothermal methodYACOUBI, N; CHEIKH, S. B; SFAR, M et al.Revue générale de thermique. 1992, Vol 31, Num 366-67, issn 0035-3159, 364,393-397[6 p.]Article

A quantitative alternative to the Vickers hardness test based on a correlation between thermal diffusivity and hardness: applications to laser-hardened carburized steelBOUBAKER, K. M; BOUHAFS, M; YACOUBI, N et al.NDT & E international. 2003, Vol 36, Num 8, pp 547-552, issn 0963-8695, 6 p.Article

Determination of absorption coefficients and thermal conductivity of GaAlAs/GaAs heterostructure using a photothermal methodYACOUBI, N; GIRAULT, B; FESQUET, J et al.Applied optics. 1986, Vol 25, Num 24, pp 4622-4625, issn 0003-6935Article

Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection modelILAHI, S; BAIRA, M; SAIDI, F et al.Journal of alloys and compounds. 2013, Vol 581, pp 358-362, issn 0925-8388, 5 p.Article

Photothermal investigation study of porous silicon layer doped lithiumKTIFA, S; HADDADI, I; SAADALLAH, F et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 110, Num 1, pp 157-161, issn 0947-8396, 5 p.Article

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substratesSGHAIER, N; TRABELSI, M; YACOUBI, N et al.Microelectronics journal. 2006, Vol 37, Num 4, pp 363-370, issn 0959-8324, 8 p.Article

MAGNETIC PROPERTIES OF SOME RARE EARTH MONOXIDES LNO (LN=PR, ND, SM) MIXED VALENCE STATE OF SMOKRILL G; RAVET MF; KAPPLER JP et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 3; PP. 351-353; BIBL. 8 REF.Article

Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloysILAHI, S; SAIDI, F; HAMILA, R et al.Physica. B, Condensed matter. 2013, Vol 421, pp 105-109, issn 0921-4526, 5 p.Article

Analysis of slow traps centres in submicron MOSFETs by random telegraph signal techniqueSGHAIER, N; MILITARU, L; TRABELSI, M et al.Microelectronics journal. 2007, Vol 38, Num 4-5, pp 610-614, issn 0959-8324, 5 p.Article

Some physical investigations of AgInS2―xSex thin film compounds obtained from AgInS2 annealed in seleneide atmosphereGHEROUEL, D; GAIED, I; BOUBAKER, K et al.Journal of alloys and compounds. 2012, Vol 545, pp 190-199, issn 0925-8388, 10 p.Article

Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noiseTRABELSI, M; MILITARU, L; SGHAIER, N et al.Solid-state electronics. 2011, Vol 56, Num 1, pp 1-7, issn 0038-1101, 7 p.Article

Morphological and thermal properties of β-SnS2 crystals grown by spray pyrolysis techniqueKHELIA, C; BOUBAKER, K; BEN NASRALLAH, T et al.Journal of crystal growth. 2009, Vol 311, Num 4, pp 1032-1035, issn 0022-0248, 4 p.Article

  • Page / 1