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au.\*:("YANG ES")

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FORMATION OF INTERFACE STATES AND DEFECTS IN GAAS-ALXGA1-XAS DH LASERS UNDER ROOM-TEMPERATURE CW OPERATION.YANG ES.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3801-3805; BIBL. 17 REF.Article

CURRENT SATURATION MECHANISMS IN JUNCTION FIELD-EFFECT TRANSISTORSYANG ES.1972; ADV. ELECTRON. ELECTRON PHYS.; U.S.A.; DA. 1972; VOL. 31; PP. 247-265; BIBL. 36 REF.Serial Issue

PHYSICAL BASIS OF SCATTERING POTENTIAL AT GRAIN BOUNDARY OF POLYCRYSTALLINE SEMICONDUCTORSWU CM; YANG ES.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 49-51; BIBL. 11 REF.Article

THERMAL RELEASE OF TRAPPED ELECTRONS AND PHOSPHORESCENT DECAY IN ZINC SILICATE PHOSPHORSYANG ES; BROWNLOW JM.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4753-4756; BIBL. 7 REF.Article

MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR CELLS.CARD HC; YANG ES.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 1; PP. 51-53; BIBL. 8 REF.Article

INVESTIGATION OF HIGH-TEMPERATURE ANNEALING AND QUENCHING EFFECTS ON AL-NSI DIODES BY C-V AND I-V MEASUREMENTSWU CM; YANG ES.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4700-4703; BIBL. 16 REF.Article

ELECTRONIC PROCESSES AT GRAIN BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION.CARD HC; YANG ES.1977; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 4; PP. 397-402; BIBL. 21 REF.Article

A TECHNIQUE FOR THE INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N JUNCTION DEVICES: APPLICATION TO GAAS ELECTROLUMINESCENT DIODESLO W; YANG ES.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 8; PP. 684-691; BIBL. 17 REF.Serial Issue

MODIFICATION OF SCHOTTKY BARRIER HEIGHT BY SURFACE GRAIN BOUNDARIES OF POLYCRYSTALLINE SILICONWU CM; YANG ES.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 945-947; BIBL. 10 REF.Article

RECRYSTALLIZED AL-NSI SCHOTTKY BARRIERS WITH A BARRIER HEIGHT OF 0.93 EVWU CMM; YANG ES.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5889-5892; BIBL. 10 REF.Article

CURRENT SUPPRESSION INDUCED BY CONDUCTION-BAND DISCONTINUITY IN AL0.35GA0.65AS-GAASN-P HETEROJUNCTION DIODESWU CM; YANG ES.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2261-2263; BIBL. 13 REF.Article

CARRIER TRANSPORT ACROSS HETEROJUNCTION INTERFACESWU CM; YANG ES.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 3; PP. 241-248; BIBL. 24 REF.Article

A LOW-TEMPERATURE FABRICATION PROCESS OF POLYCRYSTALLINE SILICON-SILICON P+-N JUNCTION DIODEWU CMM; YANG ES.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 813-814; BIBL. 10 REF.Article

PHYSICAL MECHANISMS OF CARRIER LEAKAGE IN DH INJECTION LASERS.CHII MING WU; YANG ES.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 6; PP. 3114-3117; BIBL. 11 REF.Article

TRANSPORT OF MAJORITY AND MINORITY CARRIERS IN 2-UM-DIAMETER PT-GAAS SCHOTTKY BARRIERSCHAN EY; CARD HC; YANG ES et al.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 214-219; BIBL. 11 REF.Article

THE EFFECTS OF ILLUMINATION ON THE DEPLETION-REGION RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER SOLAR CELLS.PANAYOTATOS P; CARD HC; YANG ES et al.1976; IN: PHOTOVOLTAIC SPEC. CONF. 12; BATON ROUGE, LA.; 1976; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1976; PP. 920-921; BIBL. 1 REF.Conference Paper

VARIATION OF THE IDEALITY FACTOR IN THE CURENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE DIODESYANG ES; WU CM; HUNG RY et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1262-1264; BIBL. 7 REF.Article

CORRELATIONS OF SOLVENT-EXCHANGE ACTIVATION ENTHALPIES.RUSNAK LL; YANG ES; JORDAN RB et al.1978; INORG. CHEM.; USA; DA. 1978; VOL. 17; NO 7; PP. 1810-1813; BIBL. 20 REF.Article

MULTILAYERED ION-IMPLANTED BARITT DIODES WITH IMPROVED EFFICIENCY.EKNOYAN O; YANG ES; SZE SM et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 291-295; BIBL. 5 REF.Article

PEAKED SCHOTTKY-BARRIER SOLAR CELLS BY AL-SI METALLURGICAL REACTIONS.CARD HC; YANG ES; PANAYOTA P et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 12; PP. 643-645; BIBL. 12 REF.Article

THE EFFECTS OF ILLUMINATION ON THE DEPLETION-REGION RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER SOLAR CELLS.PANAYOTATOS P; CARD HC; YANG ES et al.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 8; PP. 1213; BIBL. 1 REF.Article

DETERMINATION OF THE GRAIN BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SILICON AS A FUNCTION OF ILLUMINATION FROM PHOTOCONDUCTANCE MEASUREMENTSPANAYOTATOS P; YANG ES; HWANG W et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 417-422; BIBL. 16 REF.Article

DIFFUSIVITY AND GROWTH RATE OF SILICON IN SOLID-PHASE EPITAXY WITH AN ALUMINUM MEDIUMQINGHENG H; YANG ES; IZMIRLIYAN H et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1187-1188; BIBL. 4 REF.Article

GRAIN BOUNDARY EFFECTS ON THE ELECTRICAL BEHAVIOR OF AL-POLY-SI SCHOTTKY-BARRIER SOLAR CELLSWU CMM; YANG ES; CARD HC et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 4; PP. 687-692; BIBL. 14 REF.Article

TRANSITION WITH GRAIN SIZE FROM ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION IN POLYCRYSTALLINE SEMICONDUCTORSHWANG W; CARD HC; YANG ES et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 315-317; BIBL. 10 REF.Article

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