au.\*:("YEO, Y. C")
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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article
Temperature independent current biasing employing TFETGUO, P. F; YANG, Y; SAMUDRA, G et al.Electronics letters. 2010, Vol 46, Num 11, pp 786-787, issn 0013-5194, 2 p.Article
A rationale for membrane peeling in the repair of stage 4 macular holesANG, A; SNEAD, D. R. J; JAMES, S et al.Eye (London. 1987). 2006, Vol 20, Num 2, pp 208-214, issn 0950-222X, 7 p.Article
Negative U traps in HfO2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsSHEN, C; LI, M. F; WANG, X. P et al.International Electron Devices Meeting. 2004, pp 733-736, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper
Comparison of the optical gain of wurtzite GaN/AlGaN quantum well lasers grown on the (0001)- and (1010) oriented substratesCHONG, T. C; YEO, Y. C; LI, M. F et al.SPIE proceedings series. 1998, pp 51-60, isbn 0-8194-2873-6Conference Paper
A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi ElectrodeTRAN, X. A; ZHU, W. G; YU, H. Y et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 585-587, issn 0741-3106, 3 p.Article
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wellFAN, W. J; ABIYASA, A. P; TAN, S. T et al.Journal of crystal growth. 2006, Vol 287, Num 1, pp 28-33, issn 0022-0248, 6 p.Conference Paper
Time and temperature-dependent changes in the structural properties of tetrahedral amorphous carbon filmsTAY, B. K; SHEEJA, D; LAU, S. P et al.Surface & coatings technology. 2000, Vol 130, Num 2-3, pp 248-251, issn 0257-8972Article
Junctionless Π-gate transistor with indium gallium arsenide channelGUO, H. X; ZHANG, X; ZHU, Z et al.Electronics letters. 2013, Vol 49, Num 6, pp 402-404, issn 0013-5194, 3 p.Article
Work function tuning of metal nitride electrodes for advanced CMOS devicesREN, C; FAIZHAL, B. B; CHAN, D. S. H et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 174-177, issn 0040-6090, 4 p.Conference Paper
On the mobility, turn-on characteristics and activation energy of polycrystalline silicon thin-film transistorsGUPTA, Navneet; TYAGI, B. P.Thin solid films. 2006, Vol 504, Num 1-2, pp 59-63, issn 0040-6090, 5 p.Conference Paper
A study of Si/SiGe selective epitaxial growth by experimental design approachTAN, B. L; TAN, T. L.Thin solid films. 2006, Vol 504, Num 1-2, pp 95-100, issn 0040-6090, 6 p.Conference Paper
Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46-1.93 nm) high-K gate dielectricsKAR, Samares.Thin solid films. 2006, Vol 504, Num 1-2, pp 178-182, issn 0040-6090, 5 p.Conference Paper
Nano-indentation characterization of Ni-Cu-Sn IMC layer subject to isothermal agingLUHUA XU; PANG, John H. L.Thin solid films. 2006, Vol 504, Num 1-2, pp 362-366, issn 0040-6090, 5 p.Conference Paper
Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission deviceHYUNG SOO UH; SANG SIK PARK.Thin solid films. 2006, Vol 504, Num 1-2, pp 50-54, issn 0040-6090, 5 p.Conference Paper
Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin filmsJIN HYUNG JUN; DOO JIN CHOI.Thin solid films. 2006, Vol 504, Num 1-2, pp 205-208, issn 0040-6090, 4 p.Conference Paper
Adhesion improvement of EMC-leadframe interface using brown oxide promotersSRIKANTH, Narasimalu; CHAN, Lewis; VATH, Charles J et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 397-400, issn 0040-6090, 4 p.Conference Paper
Study of gate leakage current in symmetric double gate MOSFETs with high-k/stacked dielectricsNAGARAJU, P. V; DASGUPTA, Amitava.Thin solid films. 2006, Vol 504, Num 1-2, pp 317-320, issn 0040-6090, 4 p.Conference Paper
High-thermal-stability (HfO2)1-x(Al2O3)x film fabricated by dual-beam laser ablationLI, Q; WANG, S. J; NG, T. H et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 45-49, issn 0040-6090, 5 p.Conference Paper
Electrical characterization of platinum and palladium effects in nickel monosilicide/n-Si schottky contactsJIN, L. J; PEY, K. L; CHOI, W. K et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 149-152, issn 0040-6090, 4 p.Conference Paper
Material properties of interfacial silicate layer and its influence on the electrical characteristics of MOS devices using hafnia as the gate dielectricHEI WONG; SEN, B; FILIP, V et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 192-196, issn 0040-6090, 5 p.Conference Paper
Formation and characterization of Ti-Si-N-O barrier filmsFE, Y. C; CHEN, Z; LAW, S. B et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 218-222, issn 0040-6090, 5 p.Conference Paper
Dielectric barriers, pore sealing, and metallizationJUNEJA, Jasbir S; WANG, Pei-I; KARABACAK, Tansel et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 239-242, issn 0040-6090, 4 p.Conference Paper
Characterization of spin-on-glass very-low-k polymethylsiloxane with copper metallizationAW, K. C; SALIM, N. T; GAO, W et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 243-247, issn 0040-6090, 5 p.Conference Paper
Etching control of benzocyclobutene in CF4/O2 and SF6/O2 plasmas with thick photoresist and titanium masksLIAO, E. B; TEH, W. H; TEOH, K. W et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 252-256, issn 0040-6090, 5 p.Conference Paper
