Phase-Change Random Access Memory With Multilevel Resistances Implemented Using a Dual Phase-Change Material StackGYANATHAN, Ashvini; YEO, Yee-Chia.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 2910-2916, issn 0018-9383, 7 p.Article

Nickel-Silicide Contact Technology With Dual Near-Band-Edge B arrier Heights and Integration in CMOS FinFETs With Single MaskSINHA, Mantavya; ENG FONG CHOR; YEO, Yee-Chia et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 918-920, issn 0741-3106, 3 p.Article

A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FETCHEN SHEN; YANG, Li-Tao; SAMUDRA, Ganesh et al.Solid-state electronics. 2011, Vol 57, Num 1, pp 23-30, issn 0038-1101, 8 p.Article

Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)RINUS TEK PO LEE; DONG ZHI CHI; YEO, Yee-Chia et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1458-1465, issn 0018-9383, 8 p.Article

Work Function Engineering Within a Single Metal Gate Stack: Manipulating Terbium- and Aluminum-Induced Interface Dipoles of Opposing PolarityLIM, Andy Eu-Jin; KWONG, Dim-Lee; YEO, Yee-Chia et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 3, pp 466-473, issn 0018-9383, 8 p.Article

Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contactsWONG, Hoong-Shing; LAP CHAN; SAMUDRA, Ganesh et al.IEEE electron device letters. 2007, Vol 28, Num 12, pp 1102-1104, issn 0741-3106, 3 p.Article

Contact Technology for Strained nFinFETs With Silicon―Carbon Source/Drain Stressors Featuring Sulfur Implant and SegregationKOH, Shao-Ming; SAMUDRA, Ganesh S; YEO, Yee-Chia et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1046-1055, issn 0018-9383, 10 p.Article

Lattice-Mismatched In_0.4Ga_0.6As Source/Drain Stressors With In Situ Doping for Strained In_0.53Ga_0.47As Channel n-MOSFETsCHIN, Hock-Chun; XIAO GONG; XINKE LIU et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 805-807, issn 0741-3106, 3 p.Article

NBTI Reliability of P-Channel Transistors With Diamond-Like Carbon Liner Having Ultrahigh Compressive StressBIN LIU; TAN, Kian-Ming; MINGCHU YANG et al.IEEE electron device letters. 2009, Vol 30, Num 8, pp 867-869, issn 0741-3106, 3 p.Article

Selenium Segregation for Lowering the Contact Resistance in Ultrathin-Body MOSFETs With Fully Metallized Source/DrainWONG, Hoong-Shing; CHAN, Lap; SAMUDRA, Ganesh et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1087-1089, issn 0741-3106, 3 p.Article

Silane and Ammonia Surface Passivation Technology for High-Mobility In_0.53Ga_0.47 As MOSFETsCHIN, Hock-Chun; XINKE LIU; XIAO GONG et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 5, pp 973-979, issn 0018-9383, 7 p.Article

MOSFET gate oxide reliability: Anode hole injection model and its applicationsYEO, Yee-Chia; QIANG LU; CHENMING HU et al.International journal of high speed electronics and systems. 2001, Vol 11, Num 3, pp 849-886Article

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile EngineeringQIAN ZHOU; KOH, Shao-Ming; THANIGAIVELAN, Thirumal et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 4, pp 1310-1317, issn 0018-9383, 8 p.Article

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n-Ge ContactsYI TONG; BIN LIU; YA LIM, Phyllis Shi et al.IEEE electron device letters. 2012, Vol 33, Num 6, pp 773-775, issn 0741-3106, 3 p.Article

Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D SimulationHUI ZHAO; YEO, Yee-Chia; RUSTAGI, Subhash C et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 5, pp 1177-1184, issn 0018-9383, 8 p.Article

Novel Nickel Silicide Contact Technology Using Selenium Segregation for SOI N-FETs With Silicon-Carbon Source/Drain StressorsWONG, Hoong-Shing; LIU, Fang-Yue; ANG, Kah-Wee et al.IEEE electron device letters. 2008, Vol 29, Num 8, pp 841-844, issn 0741-3106, 4 p.Article

Simulation and design of a germanium L-shaped impact-ionization MOS transistorTOH, Eng-Huat; GRACE HUIQI WANG; CHAN, Lap et al.Semiconductor science and technology. 2008, Vol 23, Num 1, issn 0268-1242, 015012.1-015012.6Article

In situ Surface Passivation of Gallium Nitride for Metal-Organic Chemical Vapor Deposition of High-Permittivity Gate DielectricXINKE LIU; CHIN, Hock-Chun; TAN, Leng-Seow et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 95-102, issn 0018-9383, 8 p.Article

Impact of a Germanium and Carbon Preamorphization Implant on the Electrical Characteristics of NiSi/Si Contacts With a Presilicide Sulfur ImplantYI TONG; QIAN ZHOU; LYE HING CHUA et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1734-1736, issn 0741-3106, 3 p.Article

Modeling the Negative Quadratic VCC of SiO₂ in MIM CapacitorPHUNG, Thanh Hoa; STEINMANN, Philipp; WISE, Rick et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1671-1673, issn 0741-3106, 3 p.Article

High-Permittivity Dielectric Stack on Gallium Nitride Formed by Silane Surface Passivation and Metal-Organic Chemical Vapor DepositionXINKE LIU; CHIN, Hock-Chun; LENG SEOW TAN et al.IEEE electron device letters. 2010, Vol 31, Num 1, pp 8-10, issn 0741-3106, 3 p.Article

Metal gate technology for nanoscale transistors: material selection and process integration issuesYEO, Yee-Chia.Thin solid films. 2004, Vol 462-63, pp 34-41, issn 0040-6090, 8 p.Conference Paper

Hot-carrier reliability comparison for pMOSFETS with ultrathin silicon-nitride and silicon-oxide gate dielectricsPOLISHCHUK, Igor; YEO, Yee-Chia; QIANG LU et al.IEEE transactions on device and materials reliability. 2001, Vol 1, Num 3, pp 158-162, issn 1530-4388, 5 p.Article

A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device PerformanceTOH, Eng-Huat; WANG, Grace Huiqi; CHAN, Lap et al.IEEE electron device letters. 2008, Vol 29, Num 2, pp 189-191, issn 0741-3106, 3 p.Article

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si_1-yc_y) source/drain stressors and its orientation dependenceANG, Kah-Wee; CHUNLEI WAN; BALASUBRAMANIAN, Narayanan et al.IEEE electron device letters. 2007, Vol 28, Num 11, pp 996-999, issn 0741-3106, 4 p.Article