Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar CellsKARTIKA CHANDRA SAHOO; YIMING LI; YI CHANG, Edward et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2427-2433, issn 0018-9383, 7 p.Article

C―V characteristics of epitaxial germanium metal―oxide―semiconductor capacitor on GaAs substrate with ALD Al₂O₃ dielectricSHIH HSUAN TANG; KUO, Chien I; HAI DANG TRINH et al.Microelectronic engineering. 2012, Vol 97, pp 16-19, issn 0167-9317, 4 p.Article

A flip-chip packaged 80-nm In_0.7Ga_0.3As MHEMT for millimeter-wave low-noise applicationsWANG, Chin-Te; KUO, Chien-I; HSU, Heng-Tung et al.Microelectronic engineering. 2011, Vol 88, Num 2, pp 183-186, issn 0167-9317, 4 p.Article

Fabrication of 0.15-μm Γ-shaped gate In_0.52Al_0.48As /In_0.6Ga_0.4As metamorphic HEMTs using DUV lithography and tilt dry-etching techniqueLIEN, Yi-Chung; CHEN, Szu-Hung; YI CHANG, Edward et al.IEEE electron device letters. 2007, Vol 28, Num 2, pp 93-95, issn 0741-3106, 3 p.Article

Interconnect copper metallization of InGaP HBTs using WN_xas the diffusion barrierCHANG, Shang-Wen; YI CHANG, Edward; LEE, Cheng-Shih et al.Proceedings - Electrochemical Society. 2003, pp 33-37, issn 0161-6374, isbn 1-56677-349-0, 5 p.Conference Paper

Room temperature self-organized gold nanoparticles materials for embedded electronic devicesCHEN, Chun-Chi; YOU, Hsin-Chiang; YI CHANG, Edward et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 1, pp 376-381, issn 0957-4522, 6 p.Article

Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTsCHEN, Shih-Hung; LIN, Yueh-Chin; LINTEN, Dimitri et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1252-1254, issn 0741-3106, 3 p.Article

Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTsSHIU, Jin-Yu; HUANG, Jui-Chien; DESMARIS, Vincent et al.IEEE electron device letters. 2007, Vol 28, Num 6, pp 476-478, issn 0741-3106, 3 p.Article

30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsCHANG, Chia-Ta; HSU, Heng-Tung; YI CHANG, Edward et al.IEEE electron device letters. 2010, Vol 31, Num 2, pp 105-107, issn 0741-3106, 3 p.Article

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applicationsLEE, Huang-Ming; KARTIKA CHANDRA SAHOO; YIMING LI et al.Thin solid films. 2010, Vol 518, Num 24, pp 7204-7208, issn 0040-6090, 5 p.Conference Paper

Study on Ge/Si ratio and formation of Ni/P+Si_1-xGe_xand Ni/Si/P⁺Si_1-xGe_xYANG, Tsung-Hsi; YI CHANG, Edward; GUANGLI LUO et al.Proceedings - Electrochemical Society. 2003, pp 183-190, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper