au.\*:("YONG HOON YUN")
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A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article
GA0.47INO.53 AS METAL INSULATOR FIELD-EFFECT TRANSISTORS (MISFETS) FOR MICROWAVE FREQUENCY APPLICATIONSGARDNER PD; NAYAYAN SY; COLVIN S et al.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 4; PP. 542-556; BIBL. 10 REF.Article
GAAS POWER FIELD-EFFECT TRANSISTORS FOR K-BAND OPERATIONTAYLOR GC; YONG HOON YUN; LIU SG et al.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 4; PP. 508-521; BIBL. 8 REF.Article
Low-temperature migration enhanced epitaxy of based material for AlGaAs/GaAs heterojunction bipolar transistorsKAI ZHANG; DER-WOEI WU; JIANMING FU et al.Applied physics letters. 1993, Vol 63, Num 6, pp 809-811, issn 0003-6951Article