Approximation by invertible and noninvertible operatorsPEI YUAN WU.Journal of approximation theory. 1989, Vol 56, Num 3, pp 267-276, issn 0021-9045Article

Performance of the PN-sequence acquisition with the serial and parallel search strategies and the matched filter detectorYUAN-WU, Y.Annales des télécommunications. 1998, Vol 53, Num 7-8, pp 320-333, issn 0003-4347Article

A new internal overvoltage protection structure for the bipolar power transistorCHING-YUAN WU.IEEE journal of solid-state circuits. 1983, Vol 18, Num 6, pp 773-777, issn 0018-9200Article

Numerical ranges as circular discsPEI YUAN WU.Applied mathematics letters. 2011, Vol 24, Num 12, pp 2115-2117, issn 0893-9659, 3 p.Article

Which linear transformations have isomorphic hyperinvariant subspace lattices?PEI YUAN WU.Linear algebra and its applications. 1992, Vol 169, pp 163-178, issn 0024-3795Article

An analytic model for barrier height enhancement of the Schottky barrier diode using low-energy ion implantationCHING-YUAN WU.Journal of applied physics. 1983, Vol 54, Num 2, pp 971-976, issn 0021-8979Article

SILVER NANOPARTICLES CAUSE OXIDATIVE DAMAGE AND HISTOLOGICAL CHANGES IN MEDAKA (ORYZIAS LATIPES) AFTER 14 DAYS OF EXPOSUREYUAN WU; QUNFANG ZHOU.Environmental toxicology and chemistry. 2013, Vol 32, Num 1, pp 165-173, issn 0730-7268, 9 p.Article

An iterative channel estimation and symbol detection procedure with improved performance by observation separationYUAN-WU, Yi.IEEE International Conference on Communications. 2004, isbn 0-7803-8533-0, vol4, 2417-2421Conference Paper

Heterogeneous variances in repeated measuresYUAN WU; MCGILCHRIST, C. A.Biometrical journal. 1995, Vol 37, Num 5, pp 523-530, issn 0323-3847Article

Covering rectilinear polygons by rectanglesSAN-YUAN WU; SAHNI, S.IEEE transactions on computer-aided design of integrated circuits and systems. 1990, Vol 9, Num 4, pp 377-388, issn 0278-0070, 12 p.Article

Two NP-hard interchangeable terminal problemsSARTAJ SAHNI; SAN-YUAN WU.IEEE transactions on computer-aided design of integrated circuits and systems. 1988, Vol 7, Num 4, pp 467-472, issn 0278-0070Article

A finite-element method for analysis of a non-linear system under stochastic parametric and external excitationLE-CHUNG SHIAU; TENG-YUAN WU.International journal of non-linear mechanics. 1996, Vol 31, Num 2, pp 193-201, issn 0020-7462Article

THE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESCHING YUAN WU.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2909-2912; BIBL. 5 REF.Article

THERMOCHEMICAL ANALYSES AND OPTIMUM CONDITIONS FOR VAPOR EPITAXY OF GAAS_1-XP_X(0.7<X<0.9).TAO YUAN WU.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 778-780; BIBL. 16 REF.Article

THEORY OF THE ELECTRON MOBILITY IN INVERSION LAYERS ON OXIDIZED SILICON SURFACE AT ROOM TEMPERATURECHING YUAN WU; THOMAS G.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4581-4587; BIBL. 27 REF.Serial Issue

Numerical ranges of weighted shiftsWANG, Kuo-Zhong; PEI YUAN WU.Journal of mathematical analysis and applications. 2011, Vol 381, Num 2, pp 897-909, issn 0022-247X, 13 p.Article

Unitary part of a contractionGAU, Hwa-Long; PEI YUAN WU.Journal of mathematical analysis and applications. 2010, Vol 366, Num 2, pp 700-705, issn 0022-247X, 6 p.Article

Desulfurization in the gas-continuous impinging stream gas-liquid reactorYUAN WU; QIN LI; FANG LI et al.Chemical engineering science. 2007, Vol 62, Num 6, pp 1814-1824, issn 0009-2509, 11 p.Article

Numerical range of a normal compression IIGAU, Hwa-Long; PEI YUAN WU.Linear algebra and its applications. 2004, Vol 390, pp 121-136, issn 0024-3795, 16 p.Article

A novel extraction technique for the effective channel length of MOSFET devicesHSIN-HSIEN LI; CHING-YUAN WU.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 5, pp 856-863, issn 0018-9383Article

The effects of impurity bands on the electrical characteristics of metal-semiconductor ohmic contactsYUNG-SONG LOU; CHING-YUAN WU.Solid-state electronics. 1995, Vol 38, Num 1, pp 163-169, issn 0038-1101Article

A new I-V model for short gate-length MESFET'sSHAN-PING CHIN; CHING-YUAN WU.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 4, pp 712-720, issn 0018-9383Article

A new two-dimensional model for the potential distribution of short gate-length MESFET's and its applicationsSHAN-PING CHIN; CHING-YUAN WU.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 8, pp 1928-1937, issn 0018-9383Article

A new simplified two-dimensional model for the threshold voltage of MOSFET's with nonuniformly doped substratePOLE-SHANG LIN; CHING-YUAN WU.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1376-1383, issn 0018-9383Article

A simple interfacial-layer model for the nonideal I-V and C-V characteristics of the Schottky-Barrier diodeHSUN-HUA TSENG; CHING-YUAN WU.Solid-state electronics. 1987, Vol 30, Num 4, pp 383-390, issn 0038-1101Article