Amplitude-modulation sideband injection locking characteristics of semiconductor lasers and their applicationKIKUCHI, K; ZAH, C. E; LEE, T. P et al.Journal of lightwave technology. 1988, Vol 6, Num 12, pp 1821-1830, issn 0733-8724Article

Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressionsVAHALA, K. J; ZAH, C. E.Applied physics letters. 1988, Vol 52, Num 23, pp 1945-1947, issn 0003-6951Article

Utilization of electroplating to lock fibers for use in optical device packagingREITH, L. A; LADANY, I; BANWELL, C et al.Journal of lightwave technology. 1992, Vol 10, Num 7, pp 918-923, issn 0733-8724Article

Differential gain and linewidth enhancement factor of 1.5-μm multiple-quantum-well active layers with and without biaxially compressive strainKIKUCHI, K; KAKUI, M; ZAH, C. E et al.IEEE Photonics technology letters. 1991, Vol 3, Num 4, pp 314-317Article

Inp-based vertical cavity surface emitting lasers for 10G applicationsNISHIYAMA, N; CANEAU, C; ZAH, C. E et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 602001.1-602001.9, issn 0277-786X, isbn 0-8194-6051-6, 1VolConference Paper

Unambiguous determination of quantum capture, carrier diffusion, and intrinsic effects in quantum-well laser dynamics using wavelenght-selective optical modulationVASSILOVSKI, D; TA-CHUNG WU; KAN, S et al.IEEE photonics technology letters. 1995, Vol 7, Num 7, pp 706-708, issn 1041-1135Article

Measurement of nonradiative Auger and radiative recombination rates in strained-layer quantum-well systemsWANG, M. C; KASH, K; ZAH, C. E et al.Applied physics letters. 1993, Vol 62, Num 2, pp 166-168, issn 0003-6951Article

All-optical image transmission through a single-mode fiberEUNG GI PAEK; ZAH, C. E; CHEUNG, K. W et al.Optics letters. 1992, Vol 17, Num 8, pp 613-615, issn 0146-9592Article

Low-threshold and high-speed 1•5μm compressive-strained multiquantum well four-wavelength distributed-feedback laser arraysZAH, C. E; CHEUNG, K. W; LEE, T. P et al.Electronics Letters. 1991, Vol 27, Num 12, pp 1040-1042, issn 0013-5194, 3 p.Article

Orientation dependence of S,Zn,Si,Te and Sn doping in OMCVD growth of InP and GaAs : application to DH lasers and lateral p-n junction arrays grown on non-planar substratesBHAT, R; CANEAU, C; ZAH, C. E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 772-778, issn 0022-0248Conference Paper

Fabrication and performance of 1•5υm GalnAsP travelling-wave laser amplifiers with angled facetsZAH, C. E; OSINSKI, J. S; CANEAU, C et al.Electronics Letters. 1987, Vol 23, Num 19, pp 990-992, issn 0013-5194Article

Multiwavelength DFB laser array transmitters for ONTC reconfigurable optical network testbed : Special issue on multiwavelength optical technology and networksLEE, T.-P; ZAH, C. E; KOZA, M et al.Journal of lightwave technology. 1996, Vol 14, Num 6, pp 967-976, issn 0733-8724Article

Cavity length dependence of K-limited bandwidth in 1.6 μm compressive-strained quantum well lasersWU, T. C; KAN, S. C; VASSILOVSKI, D et al.Electronics Letters. 1993, Vol 29, Num 5, pp 449-450, issn 0013-5194Article

Interferometric noise limitations in fibre-amplifier cascadesESKILDSEN, L; GOLDSTEIN, E. L; ANDREJCO, M et al.Electronics Letters. 1993, Vol 29, Num 23, pp 2040-2041, issn 0013-5194Article

1.5μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arraysZAH, C. E; LIN, P. S. D; WU, T. C et al.Electronics Letters. 1992, Vol 28, Num 9, pp 824-826, issn 0013-5194Article

1.5μm compressive-strained multiquantum-well waveguide detectors for coherent polarisation-diversified receiversZAH, C. E; CHEUNG, K. W; BHAT, R et al.Electronics Letters. 1991, Vol 27, Num 10, pp 838-839, issn 0013-5194Article

Phase modulation characteristics of 1.5μm strained-layer multiple quantum well laser amplifiersREICHENBACH, D; ZAH, C. E; ANDREADAKIS, N et al.Electronics Letters. 1990, Vol 26, Num 22, pp 1858-1860, issn 0013-5194Article

Narrow-linewidth 1•3 μ DFB-DCPBH lasers with λ/4-shifted first-order gratings fabricated by electron beam lithography using a new fast resistZAH, C. E; CANEAU, C; MENOCAL, S. G et al.Electronics Letters. 1988, Vol 24, Num 2, pp 94-96, issn 0013-5194Article

1.3 μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatingsZAH, C. E; CANEAU, C; SHOKOOHI, F. K et al.Electronics Letters. 1988, Vol 24, Num 20, pp 1275-1276, issn 0013-5194Article

High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor depositionBHAT, R; ZAH, C. E; WANG, Z et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 858-865, issn 0022-0248Conference Paper

Low threshold 1.3μm strained-layer AI_xGa_yIn_1-x-y as quantum well lasersZAH, C. E; BHAT, R; FAVIRE, F. J et al.Electronics Letters. 1992, Vol 28, Num 25, pp 2323-2325, issn 0013-5194Article

Low threshold 1.5μm tensile-strained single quantum well lasersZAH, C. E; BHAT, R; PATHAK, B et al.Electronics Letters. 1991, Vol 27, Num 16, pp 1414-1416, issn 0013-5194Article

Novel etching technique for a buried heterostructure GaInAs/AIgaInAs quantum-well laser diodeKASUKAWA, A; BHAT, R; CANEAU, C et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1269-1271, issn 0003-6951Article

A novel technique for the preservation of gratings in InP and InGAAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVDBHAT, R; KOZA, M. A; ZAH, C. E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 871-877, issn 0022-0248Conference Paper

High-speed 1.3 μm GaInAsP p-substrate buried-crescent lasers with semi-insulating Fe/Ti-doped InP current blocking layersZAH, C. E; CANEAU, C; MENOCAL, S. G et al.Electronics Letters. 1988, Vol 24, Num 11, pp 695-697, issn 0013-5194Article