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KRANKE UND KRANKHEITEN IN EINER GERIATRISCHEN ABTEILUNG. = LES PATIENTS ET LEUR MALADIE DANS UN HOPITAL GERIATRIQUEZAPPE H.1976; AKTUELLE GERONTOL.; DTSCH.; DA. 1976; VOL. 6; NO 7; PP. 365-373; ABS. ANGL.; BIBL. 3 REF.Article

ZUR BEDEUTUNG DES RECHTSPRAEKORDIALEN R-VERLUSTES IM ELG AELTERER MESCHEN (KLINISCH-AUTOPTISCHE UNTERSUCHUNGEN) = L'IMPORTANCE DE L'ABSENCE DE LAMBDA DANS LES DERIVATIONS PRECORDIALES DROITES A L'ECG DES SUJETS AGESZAPPE H; BEISSEL A.sdACTUELLE GERONTOL.; DTSCH.; DA. 197; VOL. 2; NO 7; PP. 431-442; ABS. ANGL.; BIBL. 28REF.Serial Issue

Electronic study of plasma-induced damage in GaAs heterostructuresZAPPE, H. P.Microelectronic engineering. 1993, Vol 20, Num 3, pp 227-239, issn 0167-9317Article

Hot-electron electroluminescence in GaAs transistorsZAPPE, H. P.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 391-400, issn 0268-1242Article

HALBLEITERVERSTAERKER FUER DAS RICHTFUNKSYSTEM FM 300-1800-TV/11200. = AMPLIFICATION A SEMI-CONDUCTEURS POUR LE SYSTEME A FAISCEAU HERTZIEN FM 300-1800-TV/11200BUCHS JD; WOLK D; ZAPPE H et al.1977; TECH. MITT. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1977; VOL. 67; NO 2; PP. 81-85; BIBL. 7 REF.Article

Reactive-ion-etch damage in GaAs processing evaluated by a microwave absorption techniqueZAPPE, H. P; KAUFEL, G.Applied surface science. 1991, Vol 50, Num 1-4, pp 290-294, issn 0169-4332, 5 p.Conference Paper

Characteristics of CMOS devices in high-energy boron-implanted substratesZAPPE, H. P; HU, C.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 1029-1034, issn 0018-9383Article

Carrier transport in HEMT's analyzed by high-field electroluminescenceZAPPE, H. P; AS, D. J.IEEE electron device letters. 1991, Vol 12, Num 11, pp 590-592, issn 0741-3106Article

Tunable, membrane-based, pneumatic micro-mirrorsWERBER, A; ZAPPE, H.Journal of optics. A, Pure and applied optics (Print). 2006, Vol 8, Num 7, issn 1464-4258, S313-S317Conference Paper

CRYSTALS OF HUMAN ERYTHROCYTE GLUTATHIONE REDUCTASESCHULZ GE; ZAPPE H; WORTHINGTON DJ et al.1975; F.E.B.S. LETTERS; NETHERL.; DA. 1975; VOL. 54; NO 1; PP. 86-88; BIBL. 19REFArticle

A p-v-n diode model for CMOS latchupZAPPE, H. P; CHENMING HU.Solid-state electronics. 1991, Vol 34, Num 11, pp 1275-1279, issn 0038-1101Article

Electroluminescence from gunn domains in GaAs/AIGaAs heterostructure field-effect transistorsZAPPE, H. P; MOGLESTUE, C.Journal of applied physics. 1990, Vol 68, Num 5, pp 2501-2503, issn 0021-8979, 3 p.Article

Mechanisms for the emission of visible light from GaAs field-effect transistorsZAPPE, H. P; AS, D. J.Applied physics letters. 1990, Vol 57, Num 27, pp 2919-2921, issn 0003-6951, 3 p.Article

Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systemsZAPPE, H. P; JANTZ, W.Journal of applied physics. 1990, Vol 68, Num 12, pp 6309-6314, issn 0021-8979, 6 p.Article

Spectrum of hot-electron luminescence from high electron mobility transistorsZAPPE, H. P; AS, D. J.Applied physics letters. 1991, Vol 59, Num 18, pp 2257-2259, issn 0003-6951Article

X-ray diffraction study of fast and slow mammalian skeletal muscle in the live relaxated stateZAPPE, H. A; MAEDA, Y.Journal of molecular biology. 1985, Vol 185, Num 1, pp 211-214, issn 0022-2836Article

Expression of Bacillus amyloliquefaciens amylase and Vibrio alginolyticus protease A fusion genesZAPPE, H; BLATCH, G. L; WOODS, D. R et al.JGM. Journal of general microbiology. 1992, Vol 138, pp 319-327, 2Article

Oxide implantation for threshold voltage controlZAPPE, H. P; ARONOWITZ, S; CHENMING HU et al.Solid-state electronics. 1990, Vol 33, Num 11, pp 1447-1453, issn 0038-1101, 7 p.Article

Interfacial charge modification between SiO2 and siliconARONOWITZ, S; ZAPPE, H. P; HU, C et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1317-1319, issn 0003-6951Article

Tunable thermo-optic filter for wdm applicationsHOHLFELD, D; EPMEIER, M; ZAPPE, H et al.Proceedings, IEEE micro electro mechanical systems. 2002, pp 564-567, issn 1084-6999, isbn 0-7803-7185-2, 4 p.Conference Paper

Effective charge modification between SiO2 and siliconARONOWITZ, S; ZAPPE, H. P; HU, C et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2368-2370, issn 0013-4651, 3 p.Article

A thermally tunable, silicon-based optical filterHOHLFELD, D; EPMEIER, M; ZAPPE, H et al.Sensors and actuators. A, Physical. 2003, Vol 103, Num 1-2, pp 93-99, issn 0924-4247, 7 p.Conference Paper

Optical displacement measurement with GaAs/AlGaAs-based monolithically integrated Michelson interferometersHOFSTETTER, D; ZAPPE, H. P; DÄNDLIKER, R et al.Journal of lightwave technology. 1997, Vol 15, Num 4, pp 663-670, issn 0733-8724Article

Ridge waveguide DBR laser with nonabsorbing grating and transparent integrated waveguideHOFSTETTER, D; ZAPPE, H. P; EPLER, J. E et al.Electronics Letters. 1995, Vol 31, Num 12, pp 980-982, issn 0013-5194Article

Nucleotide sequence of a Clostridium acetobutylicum P262 xylanase gene (xynB)ZAPPE, H; JONES, W. A; WOODS, D. R et al.Nucleic acids research. 1990, Vol 18, Num 8, pp 2179-2179, issn 0305-1048, 1 p.Article

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