Charges in HFO₂ ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

N incorporation into ALD HfO₂ gate dielectric using ion implantationLI, H.-J; POMPL, T; PRICE, J et al.DRC : Device research conference. 2004, pp 15-16, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

An isolated vertical n-p-n transistor in an n-well CMOS processZEITZOFF, P. M; ANAGNOSTOPOULOS, C. N; WONG, K. Y et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 2, pp 489-494, issn 0018-9200Article

Effect of pre-existing defects on reliability assessment of high-K gate dielectricsBERSUKER, G; SIM, J. H; YOUNG, C. D et al.Microelectronics and reliability. 2004, Vol 44, Num 9-11, pp 1509-1512, issn 0026-2714, 4 p.Conference Paper

Measurement and control of the boron and phosphorus concentration in LPCVD borophosphosilicate glassZEITZOFF, P. M; HOSSAIN, T. Z; BOISVERT, D. M et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3917-3922, issn 0013-4651Article