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A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopyNING ZHAN; MIN XU; ZHANG, David Wei et al.Applied surface science. 2008, Vol 254, Num 22, pp 7512-7515, issn 0169-4332, 4 p.Article

Effect of Pulse-Plated Nickel Barriers on Tin Whisker Growth for Pure Tin Solder JointsCHEN, Min-Na; DING, Shi-Jin; SUN, Qing-Qing et al.Journal of electronic materials. 2008, Vol 37, Num 6, pp 894-900, issn 0361-5235, 7 p.Article

Influence of NH₃ plasma treatment on chemical bonding and water adsorption of low-k SiCOH filmGUO, Hao-Wen; LIAN ZHU; LEI ZHANG et al.Microelectronic engineering. 2008, Vol 85, Num 10, pp 2114-2117, issn 0167-9317, 4 p.Conference Paper

Preparation of SrRuO₃ thin film by chemical reactive pulsed laser depositionXIAODONG FANG; TACHIKI, M; KOBAYASHI, T et al.Thin solid films. 2000, Vol 368, Num 2, pp 227-230, issn 0040-6090Conference Paper

Enhanced diamond film growth by Xe-added microwave plasma CVDHOSOMI, T; MAKI, T; KOBAYASHI, T et al.Thin solid films. 2000, Vol 368, Num 2, pp 269-274, issn 0040-6090Conference Paper

Aerosol and plasma assisted chemical vapor deposition process for multi-component oxide La_0.8Sr_0.2MnO₃ thin filmWANG, H. B; MENG, G. Y; PENG, D. K et al.Thin solid films. 2000, Vol 368, Num 2, pp 275-278, issn 0040-6090Conference Paper

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Effects at reactive ion etching of CVD diamondBELLO, I; FUNG, M. K; ZHANG, W. J et al.Thin solid films. 2000, Vol 368, Num 2, pp 222-226, issn 0040-6090Conference Paper

Comparison of deposition behavior of Pb(Zr, Ti)O₃ films and its end-member-oxide films prepared by MOCVDFUNAKUBO, H; NAGASHIMA, K; SHINOZAKI, K et al.Thin solid films. 2000, Vol 368, Num 2, pp 261-265, issn 0040-6090Conference Paper

Thermodynamics analyses of the effect of CH₃ and C₂H₂ on morphology of CVD diamond filmsZHANG, J.-Y; WANG, P.-F; DING, S.-J et al.Thin solid films. 2000, Vol 368, Num 2, pp 266-268, issn 0040-6090Conference Paper

Two-step growth of high quality diamond filmsLIAO, Y; CHANG, C; LI, C. H et al.Thin solid films. 2000, Vol 368, Num 2, pp 303-306, issn 0040-6090Conference Paper

Quantum chemical study of the initial surface reactions in atomic layer deposition of TiN on the SiO₂ surfaceLU, Hong-Liang; WEI CHEN; DING, Shi-Jin et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 26, pp 5937-5944, issn 0953-8984, 8 p.Article

Surface reaction mechanism of atomic layer deposition of HfO₂ on Ge(1 0 0)-2 × 1 : A density functional theory studyJIE REN; LU, Hong-Liang; WEI CHEN et al.Applied surface science. 2006, Vol 252, Num 24, pp 8466-8470, issn 0169-4332, 5 p.Article

Low dielectric constant SiO₂:C, F films prepared from Si(OC₂H₅)₄/C₄F₈/Ar by plasma-enhanced CVDDING, Shi-Jin; ZHANG, David Wei; WANG, Ji-Tao et al.Chemical vapor deposition (Print). 2001, Vol 7, Num 4, pp 142-146, issn 0948-1907Article

Characterization of elastic properties of hard carbon and boron nitride films using the Brillouin light scattering techniqueWITTKOWSKI, T; WIEHN, V; JORZICK, J et al.Thin solid films. 2000, Vol 368, Num 2, pp 216-221, issn 0040-6090Conference Paper

Proceedings from the 1st Asian Conference on Chemical Vapour Deposition, May 10-13 1999, Shanghai, ChinaZHANG, David Wei; WANG, Ji-Tao; LIANG, Jun-Wu et al.Thin solid films. 2000, Vol 368, Num 2, issn 0040-6090, 154 p.Conference Proceedings

Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)JIANJUN ZHU; SUYING LIU; JUNWU LIANG et al.Thin solid films. 2000, Vol 368, Num 2, pp 307-311, issn 0040-6090Conference Paper

ZnSe growth by radical assisted MOCVD using hollow cathode plasmaAOKI, T; IKEDA, T; KORZEC, D et al.Thin solid films. 2000, Vol 368, Num 2, pp 244-248, issn 0040-6090Conference Paper

A Novel 1T-1D DRAM Cell for Embedded ApplicationCAO, Cheng-Wei; ZANG, Song-Gan; XI LIN et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1304-1310, issn 0018-9383, 7 p.Article

Electronic structure and optical properties of Nb doped Al₂O₃ on Si by atomic layer depositionYAN XU; LIN CHEN; SUN, Qing-Qing et al.Solid state communications. 2010, Vol 150, Num 35-36, pp 1690-1692, issn 0038-1098, 3 p.Article

Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer depositionLIN DONG; SUN, Qing-Qing; YU SHI et al.Thin solid films. 2009, Vol 517, Num 15, pp 4355-4359, issn 0040-6090, 5 p.Article

Initial surface reactions in atomic layer deposition of HfSi_xO_y and HfO₂ : A comparative study by density functional theoryJIE REN; YONGQI HU; JIANYING WANG et al.Thin solid films. 2008, Vol 516, Num 10, pp 2966-2972, issn 0040-6090, 7 p.Article