REFLEXION D'UNE ONDE ELECTROMAGNETIQUE PLANE PAR LA LIMITE D'UN MILIEU AVEC MODULATION SINUSOIDALE DE LA CONSTANTE DIELECTRIQUEZHILYAEV YU V; KONSTANTINOV OV; PANAKHOV MM et al.1977; FIZ. TVERD. TELA; S.S.S.R.; DA. 1977; VOL. 19; NO 6; PP. 1798-1805; BIBL. 7 REF.Article

PRINCIPAUX PARAMETRES DE L'ENCLENCHEMENT DE THYRISTORS A L'ARSENIURE DE GALLIUMVAJNSHTEJN SN; DIAKONU II; ZHILYAEV YU V et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 573-575; BIBL. 8 REF.Article

Propagation de l'état en circuit dans les thyristors en GaAsVAJNSHTEJN, S. N; ZHILYAEV, YU. V; LEVINSHTEJN, M. E et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 1, pp 129-133, issn 0015-3222Article

Nonstroichiometry of GaAs VPE thin filmsZHILYAEV, YU. V; KYUTT, R. N; NIKITINA, I. P et al.Soviet physics. Technical physics. 1990, Vol 35, Num 11, pp 1352-1353, issn 0038-5662Article

Etude de la commutation de structures de thyristors en arséniure de gallium en des temps inférieurs à la nanosecondeVAJNSHTEJN, S. N; ZHILYAEV, YU. V; LEVINSHTEJN, M. E et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 6, pp 1134-1137, issn 0015-3222Article

Magnetic cooling of excitons in GaAsZHILYAEV, YU. V; ROSSIN, V. V; ROSSINA, T. V et al.Soviet physics, JETP. 1991, Vol 72, Num 4, pp 692-698, issn 0038-5646, 7 p.Article

Utilisation des spectres de luminescence des polaritons pour caractériser la qualité des cristaux de GaAsZHILYAEV, YU. V; ROSSIN, V. V; ROSSINA, T. V et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1885-1888, issn 0015-3222Article

Enhancement of exciton luminescence of GaAs in a magnetic fieldZHILYAEV, YU. V; ROSSIN, V. V; ROSSINA, T. V et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1989, Vol 49, Num 9, pp 492-494, issn 0370-274X, 3 p.Article

Enhancement of the induced photopleochroism in p-n-GaP/p-Si structuresBERKELIEV, A; ZHILYAEV, YU. V; NAZAROV, N et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 10, pp 897-900, issn 1063-7826Article

Influence de l'intensité d'excitation sur la luminescence des polaritons dans l'arséniure de galliumBOTNARYUK, V. M; ZHILYAEV, YU. V; ROSSIN, V. V et al.Fizika tverdogo tela. 1986, Vol 28, Num 1, pp 201-207, issn 0367-3294Article

The investigation of a transition layer in epitaxial GaAs by the low temperature photoluminescence techniqueZHILYAEV, YU. V; KRIVOLAPCHUK, V. V; RODIONOV, A. V et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp K61-K64, issn 0031-8965Article

Electroluminescence of epitaxial GaP p-n structures grown on Si substratesEVSTROPOV, V. V; ZHILYAEV, YU. V; NAZAROV, N et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 4, pp 369-371, issn 1063-7826Article

Electrical and photoelectric properties of anisotypic GaP/Si heterostructures grown by gallium phosphide vapor-phase epitaxyEVSTROPOV, V. V; ZHILYAEV, YU. V; NAZAROV, N et al.Technical physics. 1993, Vol 38, Num 12, pp 1057-1061, issn 1063-7842Article

Electrical properties of epitaxial p-n GaP structures deposited on Si substratesEVSTROPOV, V. V; ZHILYAEV, YU. V; NAZAROV, N et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 8, pp 729-732, issn 1063-7826Article

Luminescence de polaritons de GaAsZHILYAEV, YU. V; MARKARYAN, G. R; ROSSIN, V. V et al.Fizika tverdogo tela. 1986, Vol 28, Num 9, pp 2688-2695, issn 0367-3294Article

Study of absorption spectra of Er3+ ions in GaN crystalsKRIVOLAPCHUK, V. V; MEZDROGINA, M. M; RAEVSKII, S. D et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 112-115, issn 0031-8965, 4 p.Conference Paper

Bulk gallium nitride: preparation and study of propertiesZHILYAEV, Yu. V; NASONOV, A. V; RAEVSKI, S. D et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 122-126, issn 0031-8965, 5 p.Conference Paper

Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys : magnetic resonance studiesNICKOLAENKO, A. E; GILINSKY, A. M; ZHURAVLEV, K. S et al.Semiconductor science and technology. 2006, Vol 21, Num 2, pp 105-111, issn 0268-1242, 7 p.Article

Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substratesBEL'KOV, V. V; BOTNARYUK, V. M; KATSAVETS, N. I et al.Journal of crystal growth. 1998, Vol 187, Num 1, pp 29-34, issn 0022-0248Article