ENERGY FROM COAL IN THE POWER SYSTEM OF THE YEAR 2000ZIELINSKI E.1975; ENERGETYKA; POLSKA; DA. 1975; NO 1; PP. 8-12; ABS. ANGL. ALLEM. RUSSE; BIBL. 5 REF.Article

ZUM WECHSELWIRKUNGSMECHANISMUS VON ATHYLXANTHOGENSAEUREAETHYLESTERLOESUNGEN MIT KUPFER- UND NICKELOBERFLAECHEN BEI ADSORPTIVEN UND TRIBOCHEMISCHEN REAKTIONEN = ETUDE DU MECANISME D'INTERACTION ENTRE DES SOLUTIONS D'ESTER ETHYLIQUE D'ACIDE ETHYL-XANTHIQUE ET DES SURFACES DE CUIVRE OU NICKEL, PAR REACTIONS D'ADSORPTION ET TRIBOCHIMIQUESZIELINSKI E; DUNKEN H.1975; WISSENSCH. Z. FRIEDRICH-SCHILLER-UNIV. JENA, MATH.-NATURWISSENSCH. REIHE; DTSCH.; DA. 1975; VOL. 23; NO 5; PP. 751-754; ABS. RUSSE ANGL.; BIBL. 5 REF.Article

ETUDE SUR LA FORMATION DE GAZ DANS LES SABLES A NOYAU LIES AVEC LA RESINE KARBAFUR ZSOLARSKI W; ZIELINSKI E.1974; ZESZ. NAUK. AKAD. GORN.-HUTN. STANISLAW STASZICA; POLSKA; DA. 1974; NO 439; PP. 129-138; ABS. ANGL. RUSSE; BIBL. 6 REF.; (XXXII ZJAZD NAUK. WYCHOWANROW UCZELNI; KRAKOW; 1974)Conference Paper

NOWY SPOSOB OZNACZANIA GAZOTWORCZOSCI ORAZ PRODUKTOW ROZKTADU TERMICZNEGO MAS RDZENIOWYCH = NOUVELLE METHODE DE DETERMINATION DES MISSIONS GAZEUSES ET DES PRODUITS DE DECOMPOSITION THERMIQUE DES NOYAUX EN SABLESOLARSKI W; ZIELINSKI E.1978; PRZEGL. ODLEWN.; POL; DA. 1978; VOL. 28; NO 10; PP. 233-236; ABS. RUS/ENG/GER; BIBL. 2 REF.Article

AN ATTEMPT TO DETERMINE THE ABSOLUTE AGE OF THE CARBONIFEROUS BRINES OF THE COAL-MINE "SILESIA" (UPPER SILESIA).KLECZKOWSKI AS; WITCZAK S; ZIELINSKI E et al.1968; BULL. ACAD. POL. SCI., SER. SCI. GEOL. GEOGR; POL; 1968, VOL. 16, NUM. 0001, P. 27 A 40Miscellaneous

ZAGADNIENIE OCENY TOKSYCZNOSCI GAZOW WYDZIELAJACYCH SIE Z FORMY PODCZAS ODLEWANIA = ASSESSMENT PROBLEM OF TOXICITY OF GASES EVOLVING FROM MOULD DURING POURING = PROBLEME D'EVALUATION DE LA TOXICITE DES GAZ EMIS PAR LE MOULE DURANT LA COULEEOLSZOWSKI T; SOLARSKI W; ZIELINSKI E et al.1980; PIZ. ODLEW.; ISSN 0033-2275; POL; DA. 1980; VOL. 30; NO 5; PP. 129-131; ABS. RUS/ENG/GER; BIBL. 5 REF.Article

Comparative study of ion milling techniques in cross-sectional transmission electron microscope specimen preparationZIELINSKI, E. M; TRACY, B.Microscopy research and technique. 1992, Vol 22, Num 2, pp 199-206Article

Well width dependence of optical gain in GaAs/AlGaAs-multi-quantum-well heterostructuresZIELINSKI, E; SCHWEIZER, H; STUBER, R et al.Physica scripta (Print). 1987, Vol 35, Num 2, pp 216-219, issn 0031-8949Article

The sizes of coherent band states in semiconductors, derived from the Franz-Keldysh effectJAEGER, A; WEISER, G; WIEDEMANN, P et al.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 36, pp 6779-6789, issn 0953-8984Article

Effects of barrier layer and processing conditions on thin film Cu microstructureZIELINSKI, E. M; VINCI, R. P; BRAVMAN, J. C et al.Journal of electronic materials. 1995, Vol 24, Num 10, pp 1485-1492, issn 0361-5235Article

Nucleation and growth mechanisms of a,b-axis-oriented YBa₂Cu₃O_7-δ films on LaAlO₃STREIFFER, S. K; LAIRSON, B. M; ZIELINSKI, E. M et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 17, pp 11431-11438, issn 0163-1829Article

Optical gain in strain-free and strained layer Ga_xIn_1-xAs/InP superlatticesZIELINSKI, E; KEPPLER, F; STREUBEL, K et al.Superlattices and microstructures. 1989, Vol 5, Num 4, pp 555-559, issn 0749-6036, 5 p.Article

Optical investigations of the sidewall recombination in wet etched InGaAs/InP-wiresJACOBS, B; EMMERLING, M; FORCHEL, A et al.Japanese journal of applied physics. 1993, Vol 32, Num 2A, pp L173-L176, issn 0021-4922, 2Article

MOVPE of In(GaAs)P/InGaAs MQW structuresWIEDEMANN, P; KLENK, M; KÖRBER, W et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 561-566, issn 0022-0248Conference Paper

1.55 μm strained layer multiple quantum well DFB-lasers with low chirp and low distortions for optical analog CATV distribution systemsCEBULLA, U; BOUAYAD, J; HAISCH, H et al.Fiber and integrated optics. 1994, Vol 13, Num 3, pp 241-245, issn 0146-8030Article

Photoluminescence study of implantation-induced intermixing of In_0.53Ga_0.47As/InP single quantum wells by argon ionsOSHINOWO, J; DREYBRODT, J; FORCHEL, A et al.Journal of applied physics. 1993, Vol 74, Num 3, pp 1983-1986, issn 0021-8979Article

Low-chirp highly linear 1.55 μm strained-layer MQW DFB lasers for optical analog TV distribution systemsHAISCH, H; CEBULLA, U; ZIELINSKI, E et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 1782-1791, issn 0018-9197Article

Strong lateral quantization effects in the luminescence of InGaAsP/InP quantum wiresILS, P; MICHEL, M; FORCHEL, A et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1183-1186, issn 0038-1101Conference Paper

Gain-modulated second order distributed feedback gratings fabricated by maskless focused ion beam implantation in GaInAsP heterostructuresORTH, A; REITHMAIER, J. P; MÜLLER, J et al.Microelectronic engineering. 1995, Vol 27, Num 1-4, pp 343-346, issn 0167-9317Conference Paper

Investigation of InGaAs/InP interdiffusion by simultaneous transmission electron microscopy and photoluminescence analysisOSHINOWO, J; FORCHEL, A; GANIERE, J. D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 277-280, issn 0921-5107Conference Paper

10 Gbit/s MQW-DFB-SIBH lasers entirely grown by LPMOVPESPEIER, P; BOUAYAD-AMINE, J; HILDEBRAND, O et al.Electronics Letters. 1991, Vol 27, Num 10, pp 863-864, issn 0013-5194Article

Inorganic antireflective coating process for deep-UV lithographyQIZHI HE; LEE, W. W; HANRATTY, M et al.SPIE proceedings series. 1998, pp 337-346, isbn 0-8194-2779-9Conference Paper