DETERMINATION OF RANDOM AND ALIGNED STOPPING POWERS FOR 80-300 KEV PROTONS IN SILICON BY BACK-SCATTERING MEASUREMENTS.CEMBALI F; ZIGNANI F.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 31; NO 3; PP. 169-173; BIBL. 10 REF.Article

SELF-ANNEALING OF ION-IMPLANTED SILICON: FIRST EXPERIMENTAL RESULTSCEMBALI GF; MERLI PG; ZIGNANI F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 808-810; BIBL. 7 REF.Article

A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article

DIFFERENTIAL PULSE POLAROGRAPHIC DETERMINATION OF CHROMIUM IN GALLIUM ARSENIDEFERRI D; ZIGNANI F; BULDINI PL et al.1982; FRESENIUS Z. ANAL.; ISSN 0016-1152; DEU; DA. 1982; VOL. 313; NO 7; PP. 539-541; BIBL. 5 REF.Article

RADIATION DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION: RANDOM AND ALIGNED IMPLANTS.CEMBALL F; DORI L; GALLONI R et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 111-117; BIBL. 16 REF.Article

SELF-ANNEALED ION IMPLANTED N⁺-P DIODESCEMBALI G; FINETTI M; MERLI PG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 62-64; BIBL. 4 REF.Article

EXPERIMENTAL AND COMPUTER ANALYSIS OF P⁺-ION PENETRATION TAILS IN A SIO₂-SI TWO-LAYER SYSTEMDESALVO A; GALLONI R; ROSA R et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1994-1997; BIBL. 16 REF.Article

DOPING IN RADIATION DAMAGE PROFILES OF P⁺ IONS IMPLANTED IN SILICON ALONG THE (110) AXIS.CEMBALI F; GALLONI R; MOUSTY F et al.1974; RAD. EFFECTS.; G.B.; DA. 1974; VOL. 21; NO 4; PP. 255-264; BIBL. 28 REF.Article

EFFECT OF LASER IRRADIATION ON THE CHARACTERISTICS OF IMPLANTED LAYERS FOR SILICON SOLAR CELLSZIGNANI F; GALLONI R; PEDULLI L et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 213-221; BIBL. 9 REF.;_EUR-6376Conference Paper

INVESTIGATION IN ION IMPLANTATION AS A TECHNIQUE SUITABLE TO FABRICATE HIGH-EFFICIENCY SILICON SOLAR CELLSSONCINI G; ZIGNANI F.1981; ; LUX; LUXEMBOURG: OFFICE FOR OFFICIAL PUBLICATIONS OF THE EUROPEAN COMMUNITIES; DA. 1981; EUR/7094/CCE/195-76 ESI; 29 P.; 30 CM; BIBL. 17 REF.; ENERGYReport

Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon filmsGALLONI, R; TSUO, Y. S; BAKER, D. W et al.Applied physics letters. 1990, Vol 56, Num 3, pp 241-243, issn 0003-6951Article

Tailored emitter ion-implanted silicon solar cellsGALLONI, R; FAVERO, L; MAZZONE, A. M et al.Solar cells. 1984, Vol 11, Num 1, pp 69-85, issn 0379-6787Article

Boron an phosphorus doping of a-SiC:H thin films by means of ion implantationDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Thin solid films. 1995, Vol 265, Num 1-2, pp 113-118, issn 0040-6090Article

Ultrathin μc-Si films deposited by PECVDRIZZOLI, R; SUMMONTE, C; PLA, J et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 7-10, issn 0040-6090Conference Paper

Plasma-enhanced chemical vapour deposition of microcrystalline silicon : on the dynamics of the amorphous-microcrystalline interface by optical methodsSUMMONTE, C; RIZZOLI, R; DESALVO, A et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 4, pp 459-473, issn 1364-2812Conference Paper

Very high frequency hydrogen plasma treatment of growing surfaces: a study of the p-type amorphous to microcrystalline silicon transitionSUMMONTE, C; RIZZOLI, R; DESALVO, A et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 624-629, issn 0022-3093, 6 p., aConference Paper

Carrier confinement in a-Si_1-xN_x :H multilayer structures for increased light emissionRIZZOLI, R; SUMMONTE, C; RAVA, P et al.Advances in science and technology. 1999, pp 67-74, isbn 88-86538-28-6Conference Paper

The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide filmsDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 69, Num 2, pp 377-386, issn 0958-6644Article

Silicon heterojunction solar cells with p nanocrystalline thin emitter on monocrystalline substrateZIGNANI, F; DESALVO, A; CENTURIONI, E et al.Thin solid films. 2004, Vol 451-52, pp 350-354, issn 0040-6090, 5 p.Conference Paper

Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVDRIZZOLI, R; CENTURIONI, E; PLA, J et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 1203-1207, issn 0022-3093, bConference Paper

Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si:HGALLONI, R; RIZZOLI, R; SUMMONTE, C et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 635-638, issn 0022-3093, 1Conference Paper

Emitter tailoring in ion implanted and E-beam annealed silicon solar cellsGABILLI, E; GALLONI, R; LULLI, G et al.Photovoltaic solar energy conference. 5. 1984, pp 984-991Conference Paper

Photoluminescence and electroluminescence properties of a-Si_1-xN_x:H based superlattice structuresSUMMONTE, C; RIZZOLI, R; GALLONI, R et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1127-1131, issn 0022-3093, bConference Paper