Selected Papers from the ESSDERC 2012 ConferenceZIMMER, Thomas; FREGONESE, Sebastien.Solid-state electronics. 2013, Vol 84, issn 0038-1101, 216 p.Conference Proceedings

A versatile compact model for ballistic 1 D transistor: GNRFET and CNTFET comparisonFREGONESE, Sébastien; MANEUX, Cristell; ZIMMER, Thomas et al.Solid-state electronics. 2010, Vol 54, Num 11, pp 1332-1338, issn 0038-1101, 7 p.Article

Implementation of Tunneling Phenomena in a CNTFET Compact ModelFREGONESE, Sébastien; MANEUX, Cristell; ZIMMER, Thomas et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 10, pp 2224-2231, issn 0018-9383, 8 p.Article

Implementation of Electron―Phonon Scattering in a CNTFET Compact ModelFREGONESE, Sébastien; GOGUET, Johnny; MANEUX, Cristell et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1184-1190, issn 0018-9383, 7 p.Article

Technological dispersion in CNTFET: Impact of the presence of metallic carbon nanotubes in logic circuitsFREGONESE, Sébastien; MANEUX, Cristell; ZIMMER, Thomas et al.Solid-state electronics. 2009, Vol 53, Num 10, pp 1103-1106, issn 0038-1101, 4 p.Article

Contribution à la modélisation des transistors haute fréquence = Contribution to the high frequency transistor modelingZimmer, Thomas; Dom, Jean-Paul.1992, 158 p.Thesis

Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p⁺n junctionsSAKIC, Agata; LIN QI; SCHOLTES, Tom L. M et al.Solid-state electronics. 2013, Vol 84, pp 65-73, issn 0038-1101, 9 p.Conference Paper

Designing digital circuits with nano-scale devices: Challenges and opportunitiesBELLEVILLE, Marc; THOMAS, Olivier; VALENTIAN, Alexandre et al.Solid-state electronics. 2013, Vol 84, pp 38-45, issn 0038-1101, 8 p.Conference Paper

Hot-electron conduction in ovonic materialsJACOBONI, Carlo; PICCININI, Enrico; BUSCEMI, Fabrizio et al.Solid-state electronics. 2013, Vol 84, pp 90-95, issn 0038-1101, 6 p.Conference Paper

Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design ApplicationsNAJARI, Montassar; FREGONESE, Sébastien; MANEUX, Cristell et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 195-205, issn 0018-9383, 11 p.Article

Na⁺ current through K_ATP channels: consequences for Na⁺ and K⁺ fluxes during early myocardial ischemiaBOLLENSDORFF, Christian; KNOPP, Andreas; BISKUP, Christoph et al.American journal of physiology. Heart and circulatory physiology. 2004, Vol 55, Num 1, pp H283-H295, issn 0363-6135Article

On the impact of Ag doping on performance and reliability of GeS₂-based conductive bridge memoriesLONGNOS, F; VIANELLO, E; DAHMANI, F et al.Solid-state electronics. 2013, Vol 84, pp 155-159, issn 0038-1101, 5 p.Conference Paper

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applicationsKILCHYTSKA, V; BOL, D; DE VOS, J et al.Solid-state electronics. 2013, Vol 84, pp 28-37, issn 0038-1101, 10 p.Conference Paper

Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K transition to Single Electron TransistorDESHPANDE, V; BARRAUD, S; TOSTI, L et al.Solid-state electronics. 2013, Vol 84, pp 179-184, issn 0038-1101, 6 p.Conference Paper

Characterization of self-heating in Si―Ge HBTs with pulse, DC and AC measurementsKUMAR SAHOO, Amit; FREGONESE, Sebastien; WEISS, Mario et al.Solid-state electronics. 2012, Vol 76, pp 13-18, issn 0038-1101, 6 p.Article

Thermal Impedance Modeling of Si―Ge HBTs From Low-Frequency Small-Signal MeasurementsKUMAR SAHOO, Amit; FREGONESE, Sébastien; ZIMMER, Thomas et al.IEEE electron device letters. 2011, Vol 32, Num 2, pp 119-121, issn 0741-3106, 3 p.Article

A Nodal Model Dedicated to Self-Heating and Thermal Coupling Simulations : International Conference on Microelectronic Test StructuresBECKRICH-ROS, Hélène; ORTOLLAND, Sylvie; PACHE, Denis et al.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 2, pp 132-139, issn 0894-6507, 8 p.Article

Scalable Approach for HBT's Base Resistance Calculation : International Conference on Microelectronic Test StructuresRAYA, Christian; POURCHON, Franck; ZIMMER, Thomas et al.IEEE transactions on semiconductor manufacturing. 2008, Vol 21, Num 2, pp 186-194, issn 0894-6507, 9 p.Article

Challenges and potential of new approaches for reliability assessment of nanotechnologiesBECHOU, Laurent; DANTO, Yves; DELETAGE, Jean-Yves et al.Comptes rendus. Physique. 2008, Vol 9, Num 1, pp 95-109, issn 1631-0705, 15 p.Conference Paper

Multiscale simulation of carbon nanotube transistorsMANEUX, Cristell; FREGONESE, Sebastien; ROCHE, Stephan et al.Solid-state electronics. 2013, Vol 89, pp 26-67, issn 0038-1101, 42 p.Article

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design : GaN ELECTRONIC DEVICESKHANDELWAL, Sourabh; YADAV, Chandan; AGNIHOTRI, Shantanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3216-3222, issn 0018-9383, 7 p.Article

Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability ImprovementsKONE, Gilles A; GRANDCHAMP, Brice; MANEUX, Cristell et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1068-1074, issn 0018-9383, 7 p.Article

80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devicesWEISS, Mario; FREGONESE, Sébastien; SANTORELLI, Marco et al.Solid-state electronics. 2013, Vol 84, pp 74-82, issn 0038-1101, 9 p.Conference Paper

Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memoryMAHMOUDI, Hiwa; WINDBACHER, Thomas; SVERDLOV, Viktor et al.Solid-state electronics. 2013, Vol 84, pp 191-197, issn 0038-1101, 7 p.Conference Paper

RTS noise characterization of HfO_x RRAM in high resistive statePUGLISI, Francesco M; PAVAN, Paolo; PADOVANI, Andrea et al.Solid-state electronics. 2013, Vol 84, pp 160-166, issn 0038-1101, 7 p.Conference Paper