GROUND-STATE TERM INTERVALS IN MULTIPLY IONIZED ZINC (ZNV, ZNVI) AND GALLIUM (GAV, GVI, GAVII).DICK KA.1974; J. OPT. SOC. AMER.; U.S.A.; DA. 1974; VOL. 64; NO 5; PP. 702-705; BIBL. 11 REF.Article

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DEFORMATION DES INTEGRALES RADIALES DANS LE CALCUL DES SPECTRES DU GROUPE DU FERKANTSERYAVICHYUS A YU.1975; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1975; VOL. 14; NO 5; PP. 749-757; ABS. LITU. ANGL.; BIBL. 7 REF.Article

ION CHANNELING IN GAAS:BE, MG, ZN, AND CD AND CALCULATIONS OF ELECTRONIC STOPPING POWERSWILSON RG.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5641-5644; BIBL. 8 REF.Article

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DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED ALPICRAUX ST; RIMINI E; FOTI G et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 5; PP. 2078-2096; BIBL. 18 REF.Article