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Results 1 to 25 of 4785

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NONRECIPROCAL HF SIGNAL TRANSMISSION BY SURFACE HELIUMRUIBYS G; TOLUTIS R.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 273; BIBL. 3 REF.Article

EFFET DU TRAITEMENT SUR LA QUALITE DE LA SURFACE DES CRISTAUX DE SELENIURE DE ZINCKUKLEVA ZA; KOZHUKHOVA VT; TIKHOMIROV GP et al.1982; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1982; NO 5; PP. 35-38; BIBL. 5 REF.Article

BLOOMING CHARACTERISTICS OF A SOLID-STATE IMAGER OVERLAID WITH A PHOTOCONDUCTORCHIKAMURA T; MIYATA Y; OHTA Y et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1857-1862; BIBL. 16 REF.Article

DIFFUSION A PLUSIEURS COMPOSANTES SUR UNE DOUBLE FREQUENCE DE LASER, STIMULEE PAR ZNSE PAR UNE IMPULSION LUMINEUSE ISOLEE DE L'ORDRE DE LA PICOSECONDEZYUL'KOV VA; GRIBKOVSKIJ VP.1983; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1983; VOL. 37; NO 4; PP. 179-182; BIBL. 3 REF.Article

THE VARIATION OF RESIDUAL IMPURITIES IN ZNSE CRYSTALS USED IN LIGHT-EMITTING DIODE FABRICATIONSKUN ZK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1248-1250; BIBL. 13 REF.Article

DISLOCATIONS IN DEFORMED ZNSE SINGLE CRYSTALS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPYARISTOV VV; ZARETSKII AV; OSIPYAN YA et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 101-106; ABS. GER; BIBL. 20 REF.Article

ZINC SELENIDE WINDOW FOR TRANSMISSION OF CO2 LASER RADIATION INTO MOIST GAS AT ELEVATED PRESSURESNELSON LS; DUDA PM.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 2; PP. 259-260; BIBL. 5 REF.Article

PROPRIETES PHOTOELECTRIQUES DES HETEROJONCTIONS ARSENIURE DE GALLIUM-SELENIURE DE ZINCDEMCHENKO AM.1981; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 12; PP. 2392-2395; BIBL. 11 REF.Article

DEFECT ENERGIES IN ZNSEHARDING JH; STONEHAM AM.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 22; PP. 4649-4659; BIBL. 34 REF.Article

PHOTOVOLTAIC PROPERTIES OF ZNSE/GAAS HETEROJUNCTIONSBESOMI P; CHRISTIANSON K; WESSELS BW et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 2; PP. 113-118; BIBL. 10 REF.Article

EXCITON-PLASMA MOTT TRANSITION IN ZNSEMENESES EA.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 8; PP. 571-572; BIBL. 3 REF.Article

INFRARED ABSORPTION AND DEFECTS IN AL-DOPED ZNSEKO JS; SPITZER WG.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3894-3896; BIBL. 10 REF.Article

PHONON ANOMALIES IN ZINC SELENIDESCHMELTZER D; BESERMAN R.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 20; PP. 4259-4263; BIBL. 10 REF.Article

BLUE AND VIOLET ELECTROLUMINESCENCE EMISSION IN ZNSEXS1-XMIS DIODESFAN XM; WOODS J.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. K27-K30; BIBL. 15 REF.Article

LOW THRESHOLD VOLTAGE ZNSE:MN THIN FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR BEAM DEPOSITIONMISHIMA T; TAKAHASHI K.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2153-2155; BIBL. 7 REF.Article

Photopumped lasing in ZnSSe/ZnSe multilayer structures up to 210 KSUEMUNE, I; MASATO, H; NAKANISHI, K et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 754-757, issn 0022-0248Conference Paper

SYNTHESE PAR CHOC DE SOLUTIONS SOLIDES ZNS-ZNSEBATSANOV SS; KOPANEVA LI; LAZAREVA EV et al.1982; Z. NEORG. HIM.; ISSN 0044-457X; SUN; DA. 1982; VOL. 27; NO 4; PP. 1068-1070; BIBL. 4 REF.Article

Luminescent purity diagnostics of ZnSe crystalsVAKULENKO, O. V; KRAVCHENKO, V. M; JANCHUK, Z. Z et al.SPIE proceedings series. 1998, pp 222-226, isbn 0-8194-2808-6Conference Paper

DEEP LEVEL DEFECTS IN HETEROEPITAXIAL ZINC SELENIDEBESOMI P; WESSELS BW.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3076-3084; BIBL. 21 REF.Article

ETUDE DE L'ACTIVITE SUPERFICIELLE DES SEMI CONDUCTEURS DU TYPE DIAMANT AU COURS DE LEUR DISPERSIONKIROVSKAYA IA; YUR'EVA AV; DAN'SHINA VV et al.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 4; PP. 911-915; BIBL. 23 REF.Article

FREE EXCITON EMISSION IN FORWARD BIASED ZNSE MIS DIODESFAN XW; WOODS J.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 13; PP. 1863-1871; BIBL. 19 REF.Article

IONIZED IMPURITY SCATTERING IN N-TYPE ZNSE FROM PARTIAL WAVE PHASE SHIFTSMEYER JR; BARTOLI FJ.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 2; PP. K77-K80; BIBL. 11 REF.Article

STRESS-OPTIC COEFFICIENT OF ZNSE AT 10.6 MU MMARINER GR; VEDAM K.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 17; PP. 2878-2879; BIBL. 9 REF.Article

GROWTH OF ZINC SULFO-SELENIDE SINGLE CRYSTALS AND THEIR NEAR BAND-EDGE PHOTOLUMINESCENCESHI MIN HUANG; SATOH S; MOCHIZUKI K et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 4; PP. 674-676; BIBL. 15 REF.Article

ETUDE DU DIAGRAMME TERNAIRE CUINSE2-ZNSE-IN2SE3CHIPPAUX D; DESCHANVRES A.1982; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1982; VOL. 45; NO 2; PP. 200-211; BIBL. 19 REF.Article

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