NONRECIPROCAL HF SIGNAL TRANSMISSION BY SURFACE HELIUMRUIBYS G; TOLUTIS R.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 273; BIBL. 3 REF.Article

DIFFUSION A PLUSIEURS COMPOSANTES SUR UNE DOUBLE FREQUENCE DE LASER, STIMULEE PAR ZNSE PAR UNE IMPULSION LUMINEUSE ISOLEE DE L'ORDRE DE LA PICOSECONDEZYUL'KOV VA; GRIBKOVSKIJ VP.1983; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1983; VOL. 37; NO 4; PP. 179-182; BIBL. 3 REF.Article

THE VARIATION OF RESIDUAL IMPURITIES IN ZNSE CRYSTALS USED IN LIGHT-EMITTING DIODE FABRICATIONSKUN ZK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1248-1250; BIBL. 13 REF.Article

ZINC SELENIDE WINDOW FOR TRANSMISSION OF CO₂ LASER RADIATION INTO MOIST GAS AT ELEVATED PRESSURESNELSON LS; DUDA PM.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 2; PP. 259-260; BIBL. 5 REF.Article

PROPRIETES PHOTOELECTRIQUES DES HETEROJONCTIONS ARSENIURE DE GALLIUM-SELENIURE DE ZINCDEMCHENKO AM.1981; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 12; PP. 2392-2395; BIBL. 11 REF.Article

DEFECT ENERGIES IN ZNSEHARDING JH; STONEHAM AM.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 22; PP. 4649-4659; BIBL. 34 REF.Article

PHOTOVOLTAIC PROPERTIES OF ZNSE/GAAS HETEROJUNCTIONSBESOMI P; CHRISTIANSON K; WESSELS BW et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 2; PP. 113-118; BIBL. 10 REF.Article

LOW THRESHOLD VOLTAGE ZNSE:MN THIN FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR BEAM DEPOSITIONMISHIMA T; TAKAHASHI K.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2153-2155; BIBL. 7 REF.Article

Photopumped lasing in ZnSSe/ZnSe multilayer structures up to 210 KSUEMUNE, I; MASATO, H; NAKANISHI, K et al.Journal of crystal growth. 1990, Vol 101, Num 1-4, pp 754-757, issn 0022-0248Conference Paper

SYNTHESE PAR CHOC DE SOLUTIONS SOLIDES ZNS-ZNSEBATSANOV SS; KOPANEVA LI; LAZAREVA EV et al.1982; Z. NEORG. HIM.; ISSN 0044-457X; SUN; DA. 1982; VOL. 27; NO 4; PP. 1068-1070; BIBL. 4 REF.Article

DEEP LEVEL DEFECTS IN HETEROEPITAXIAL ZINC SELENIDEBESOMI P; WESSELS BW.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3076-3084; BIBL. 21 REF.Article

ETUDE DE L'ACTIVITE SUPERFICIELLE DES SEMI CONDUCTEURS DU TYPE DIAMANT AU COURS DE LEUR DISPERSIONKIROVSKAYA IA; YUR'EVA AV; DAN'SHINA VV et al.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 4; PP. 911-915; BIBL. 23 REF.Article

FREE EXCITON EMISSION IN FORWARD BIASED ZNSE MIS DIODESFAN XW; WOODS J.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 13; PP. 1863-1871; BIBL. 19 REF.Article

IONIZED IMPURITY SCATTERING IN N-TYPE ZNSE FROM PARTIAL WAVE PHASE SHIFTSMEYER JR; BARTOLI FJ.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 2; PP. K77-K80; BIBL. 11 REF.Article

STRESS-OPTIC COEFFICIENT OF ZNSE AT 10.6 MU MMARINER GR; VEDAM K.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 17; PP. 2878-2879; BIBL. 9 REF.Article

EXTINCTION IN AN EXTENDED-FACE CRYSTAL OF ZINC SELENIDESTEVENSON AW; BARNEA Z.1983; ACTA CRYSTALLOGRAPHICA. SECTION A. CRYSTAL PHYSICS, DIFFRACTION, THEORETICAL AND GENERAL CRYSTALLOGRAPHY; ISSN 0567-7394; DNK; DA. 1983; VOL. 39; NO 4; PP. 548-552; BIBL. 32 REF.Article

UNKNOWN EXCITED STATES OF THE SELF-ACTIVATED CENTER IN ZNSEWOJTOWICZ AJ; LOZYKOWSKI HJ.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 2; PP. K103-K106; BIBL. 7 REF.Article

DIFFUSION D'EXCITONS ET AUTOABSORPTION D'UN RAYONNEMENT RESONNANTTRAVNIKOV VV; KRIVOLAPCHUK VV.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 4; PP. 961-970; BIBL. 29 REF.Article

FLAT BAND POTENTIAL DETERMINATION OF AN ELECTROLYTE/SEMICONDUCTOR JUNCTION BY AN ELECTRO-OPTICAL METHODLEMASSON P; DALBERA JP; GAUTRON J et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6296-6300; BIBL. 22 REF.Article

INTENSITE DE LA PHOTOEXCITATION ET CINETIQUE DES EXCITONSTRAVNIKOV VV; KRIVOLAPCHUK VV.1981; PIS'MA Z. EKSP. TEOR. FIZ.; ISSN 0370-274X; SUN; DA. 1981; VOL. 34; NO 6; PP. 347-350; BIBL. 4 REF.Article

ELECTRO-OPTICAL PROPERTIES OF CUGA₀₇IN₀₃SE₂/ZNSE HETEROJUNCTIONSEURET D; VIGIL O; LECCABUE F et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 661-666; ABS. FRE; BIBL. 11 REF.Article

SYSTEMES ZNSE-SNSE, ZNSE-SNSE₂, CDSE-SNSE₂GALIULIN EH A; ODIN IN; NOVOSELOVA AV et al.1982; Z. NEORG. HIM.; ISSN 0044-457X; SUN; DA. 1982; VOL. 27; NO 1; PP. 266-268; BIBL. 3 REF.Article

(Zn,Cd)Se/ZnSe quantum-well lasers : excitonic gain in an inhomogeneously broadened quasi-two-dimensional systemDING, J; HAGEROTT, M; ISHIHARA, T et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10528-10542, issn 0163-1829Article

Optical gain of CdZnSe/ZnSe quantum well lasersAHN, D; YOO, T.-K; LEE, H. Y et al.Applied physics letters. 1991, Vol 59, Num 21, pp 2669-2671, issn 0003-6951Article

Analysis of threshold current density of CdZnSe/ZnSSe strained well lasersKURAMOTO, M; CHONG, T. C; KIKUCHI, A et al.Electronics Letters. 1993, Vol 29, Num 14, pp 1260-1262, issn 0013-5194Article