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Results 1 to 25 of 4491

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DEFAUTS DE STRUCTURE DANS UN MONOCRISTAL DE SELENIURE DE ZINC.RIVAUD G; PAVIS B; LEMERCIER M et al.1974; J. MICR.; FR.; DA. 1974; VOL. 19; NO 2; PP. 113-118; H.T. 2; ABS. ANGL.; BIBL. 17 REF.Article

LASER-INDUCED DAMAGE IN ZNSE.FRADIN DW; BUA DP.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 11; PP. 555-557; BIBL. 10 REF.Article

BIRECTIONAL TRANSMITTANCE DISTRIBUTION FUNCTION MEASUREMENTS ON ZNSEDERENIAK EL; BROD LG; HUBBS JE et al.1982; APPLIED OPTICS; ISSN 0003-6935; USA; DA. 1982; VOL. 21; NO 24; PP. 4421-4425; BIBL. 7 REF.Article

POSSIBILITE D'UTILISATION DE PREPARATIONS DE ZNSE COMMERCIAL POUR LA FABRICATION DE CERAMIQUES OPTIQUESSOKOL VA; ROKHLENKO DA; KONONOVA LI et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 5; PP. 855-857; BIBL. 3 REF.Article

ELECTROLUMINESCENCE DANS UNE HETEROJONCTION ZNTE-ZNSELE FLOCH G; ARNOULD H.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 941-944; ABS. ANGL.; BIBL. 14 REF.Serial Issue

OXYDATION DE ZNSE A L'AIRSTEPANOVA ND; KALINKIN IP; SOKOLOV VA et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 6; PP. 1030-1034; BIBL. 11 REF.Article

ORIENTATION OF ZNSE CRYSTALS BY CHEMICAL ETCHING TECHNIQUE.OCZKOWSKI H; POPLAWSKI Z.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 2; PP. 154-156; BIBL. 9 REF.Article

THERMOLUMINESCENCE MODEL WITH INTRA-PAIR METASTABLE STATEOCKOWSKI HL.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 65-74; ABS. GER; BIBL. 9 REF.Article

NONSTOICHIOMETRY OF ZNSE AND CDSERAU H.1978; J. PHYS. CHEM. SOLIDS; GBR; DA. 1978; VOL. 39; NO 8; PP. 879-882; BIBL. 15 REF.Article

HIGH-EFFICIENCY BLUE LUMINESCENCE FROM MOCVD-GROWN ZNSE AT ROOM TEMPERATUREWIGHT DR; WRIGHT PJ; COCKAYNE B et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 593-595; BIBL. 6 REF.Article

METHODE DU DEPOT D'UN FILM MINCE DE SELENIURE DE ZINC POUR REVELER LA STRUCTURE DES ECHANTILLONS METALLIQUES. APPLICATIONS DU PROCEDE A LA MICROANALYSE PAR SONDE DE CASTAINGBARBIER R; ALLAIS R.1972; SCI. TECH. ARMEM.; FR.; DA. 1972; VOL. 46; NO 3; PP. 537-576; ABS. ANGL. ALLEM.; BIBL. 6 REF.Serial Issue

CONTRAINTES INTERNES DANS LES COUCHES MINCES DE GE, ZNS ET ZNSEGUSEV AG; NESMELOV EA; NIKITIN AS et al.1982; OPTIKO-MEHANICESKAJA PROMYSLENNOST; ISSN 0030-4042; SUN; DA. 1982; NO 8; PP. 35-37; BIBL. 12 REF.Article

EFFET DU TRAITEMENT SUR LA QUALITE DE LA SURFACE DES CRISTAUX DE SELENIURE DE ZINCKUKLEVA ZA; KOZHUKHOVA VT; TIKHOMIROV GP et al.1982; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1982; NO 5; PP. 35-38; BIBL. 5 REF.Article

BLOOMING CHARACTERISTICS OF A SOLID-STATE IMAGER OVERLAID WITH A PHOTOCONDUCTORCHIKAMURA T; MIYATA Y; OHTA Y et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1857-1862; BIBL. 16 REF.Article

ZINC SELENIDE WINDOW FOR TRANSMISSION OF CO2 LASER RADIATION INTO MOIST GAS AT ELEVATED PRESSURESNELSON LS; DUDA PM.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 2; PP. 259-260; BIBL. 5 REF.Article

PROPRIETES PHOTOELECTRIQUES DES HETEROJONCTIONS ARSENIURE DE GALLIUM-SELENIURE DE ZINCDEMCHENKO AM.1981; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 12; PP. 2392-2395; BIBL. 11 REF.Article

THE EPITAXIAL GROWTH OF ZNSE ON SAPPHIRE SUBSTRATES.RATCHEVA TM; DRAGIEVA ID.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 579-585; ABS. RUSSE; BIBL. 22 REF.Article

HETERO-EPITAXIE DE ZNSE SUR GAAS PAR TRANSPORT EN TUBE OUVERT.CHEVRIER J; GALIBERT G; ETIENNE D et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 109-116; ABS. ANGL.; BIBL. 23 REF.Article

DISLOCATIONS IN DEFORMED ZNSE SINGLE CRYSTALS AS STUDIED BY WEAK-BEAM ELECTRON MICROSCOPYARISTOV VV; ZARETSKII AV; OSIPYAN YA et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 101-106; ABS. GER; BIBL. 20 REF.Article

GROWTH AND CHARACTERIZATION OF ZNSE AND HOMOGENEOUS ZNSXSE1-X CRYSTALS.CATANO A; KUN ZK.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 33; NO 2; PP. 324-330; BIBL. 15 REF.Article

EXCITON RECOMBINATION PROCESSES IN ZINC SELENIDEDEAN PJ; WRIGHT PJ; COCKAYNE B et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 18; PP. 3493-3500; BIBL. 18 REF.Article

DIFFUSION A PLUSIEURS COMPOSANTES SUR UNE DOUBLE FREQUENCE DE LASER, STIMULEE PAR ZNSE PAR UNE IMPULSION LUMINEUSE ISOLEE DE L'ORDRE DE LA PICOSECONDEZYUL'KOV VA; GRIBKOVSKIJ VP.1983; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1983; VOL. 37; NO 4; PP. 179-182; BIBL. 3 REF.Article

NITROGEN AS SHALLOW ACCEPTOR IN ZNSE GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITIONSTUTIUS W.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 246-248; BIBL. 11 REF.Article

THE VARIATION OF RESIDUAL IMPURITIES IN ZNSE CRYSTALS USED IN LIGHT-EMITTING DIODE FABRICATIONSKUN ZK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1248-1250; BIBL. 13 REF.Article

A NEW POLYTYPE OF ZINC SELENIDE CRYSTAL.MANNAMI M.1977; BULL. INST. CHEM. RES., KYOTO UNIV.; JAP.; DA. 1977; VOL. 55; NO 2; PP. 163-167; BIBL. 5 REF.Article

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