DRIFT VELOCITY OF HOLES IN GERMANIUM AND SILICONNAKAGAWA N; ZUKOTYNSKI S.1979; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1979; VOL. 57; NO 8; PP. 1233-1238; ABS. FRE; BIBL. 35 REF.Article

DETERMINATION OF THE CONDUCTION-BAND STRUCTURE OF THE III-V SEMICONDUCTORS SUBJECT TO MECHANICAL STRAIN FROM MEASUREMENTS OF THE REFLECTIVITY SPECTRUMHOWLETT W; ZUKOTYNSKI S.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6973-6977; BIBL. 5 REF.Article

EFFECT OF DEFORMATION ON THE CONDUCTION BAND OF III-V SEMICONDUCTORS.HOWLETT W; ZUKOTYNSKI S.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3688-3693; BIBL. 10 REF.Article

PHOTOCONDUCTIVITY OF SCANDIUM-DOPED GAAS.NAKAGAWA H; ZUKOTYNSKI S.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4809-4811; BIBL. 11 REF.Article

Failure of Al-SiO₂-Si MOS capacitors at high temperaturesWENXIN XU; ZUKOTYNSKI, S.Journal of the Electrochemical Society. 1993, Vol 140, Num 7, pp 2063-2065, issn 0013-4651Article

High-temperature dielectric breakdown of silicon dioxide films with aluminum electrodesFORBES, R; ZUKOTYNSKI, S.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 736-739, issn 0013-4651, 4 p.Article

IMPLICATIONS OF THE CHANGE IN WORK FUNCTION OF CHROMIUM BY THE PRESENCE OF HYDROGEN ON THE PROPERTIES OF ELECTRICAL CONTACT BETWEEN CHROMIUM AND HYDROGENATED AMORPHOUS SILICONSZADKOWSKI AJ; KALNITSKY A; MA KB et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 557-558; BIBL. 8 REF.Article

Single wafer miniature Hall-effect keyboardCHER MING TAN; ZUKOTYNSKI, S.IEEE transactions on industrial electronics (1982). 1989, Vol 36, Num 3, pp 446-450, issn 0278-0046, 5 p.Article

The electric-field assisted solid-state reaction of aluminum and silicon dioxideFORBES, R; ZUKOTYNSKI, S.Journal of the Electrochemical Society. 1989, Vol 136, Num 9, pp 2651-2653, issn 0013-4651, 3 p.Article

Monohydride clustering in the amorphous silicon matrixSIDHU, L. S; ZUKOTYNSKI, S.Journal of non-crystalline solids. 1999, Vol 246, Num 1-2, pp 65-72, issn 0022-3093Article

COMPOUND FORMATION BETWEEN AMORPHOUS SILICON AND CHROMIUM = FORMATION DE COMPOSE ENTRE SI AMORPHE ET CRYACOBI BG; SZADKOWSKI AJ; ZUKOTYNSKI S et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6424-6425; BIBL. 5 REF.Article

Electronic properties of n-i-n-i doping superlatticesTAN, C. M; XU, J. M; ZUKOTYNSKI, S et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2921-2933, issn 0021-8979Article

Electrical transport properties of CdSe thin-film transistors with Cr contactsWAECHTER, D; LEITH, G; ZUKOTYNSKI, S et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 229-235, issn 0008-4204, 7 p.Conference Paper

Structure of hydrogenated amorphous carbon deposited using saddle-field glow-discharge in methaneSAGNES, E; SZURMAK, J; MANAGE, D et al.Journal of non-crystalline solids. 1999, Vol 249, Num 1, pp 69-79, issn 0022-3093Article

Localized-capture-state model for the capture kinetics of the DX center in Al_xGa_1-xAsLEITH, G. A; ZUKOTYNSKI, S; SPRINGTHORPE, A. J et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 7, pp 3340-3343, issn 0163-1829Article

Spatially resolved space-charge density in the hydrogenated amorphous silicon schottky barrier from surface photovoltage measurementsUKAH, C. I; PERZ, J. M; ZUKOTYNSKI, S et al.Journal of applied physics. 1990, Vol 67, Num 10, pp 6486-6489, issn 0021-8979Article

Effect of current density on the electrochemical dissolution of germanium and zinc selenideCHER MING TAN; ZUKOTYNSKI, S; MAR, H et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3970-3972, issn 0013-4651, 3 p.Article

Surface photovoltage spectroscopy in hydrogenated amorphous siliconUKAH, C. I; PERZ, J. M; ZUKOTYNSKI, S et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3617-3630, issn 0021-8979Article

Morphology and electronic properties of phosphorus-doped hydrogenated amorphous and microcrystalline silicon deposited by DC discharge in SiH₄/PH₃KRUZELECKY, R. V; ZUKOTYNSKI, S; PERZ, J. M et al.Journal of non-crystalline solids. 1988, Vol 103, Num 2-3, pp 221-233, issn 0022-3093Article

Hall-coefficient factor and inverse valence-band parameters of holes in natural diamondREGGIANI, L; WAECHTER, D; ZUKOTYNSKI, S et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 6, pp 3550-3555, issn 0163-1829Article

The density of states in dc glow discharge deposited a-Si: H from Schottky barrier diode admittance measurementsJAIN, P. K; KRUZELECKY, R. V; ZUKOTYNSKI, S et al.Canadian journal of physics (Print). 1983, Vol 61, Num 5, pp 736-743, issn 0008-4204Article

Interband optical absorption in amorphous siliconKRUZELECKY, R. V; UKAH, C; RACANSKY, D et al.Journal of non-crystalline solids. 1988, Vol 103, Num 2-3, pp 234-249, issn 0022-3093Article

Radiation induced crystallization of amorphous Si:H alloyKOO, Y. C; FERRIN, R; ZUKOTYNSKI, S et al.Metallurgical transactions. A, Physical metallurgy and materials science. 1988, Vol 19, Num 5, pp 1345-1349, issn 0360-2133Article

Persistent photoconductivity in Si-doped Al_xGa_1-xAsZUKOTYNSKI, S; NG, P. C. H; PINDOR, A. J et al.Physical review letters. 1987, Vol 59, Num 24, pp 2810-2813, issn 0031-9007Article

The effect of uniaxial stress on the persistent photoconductivity in Te-doped Al_xGa_1-xAsJOHNSTONE, E; SAKAMOTO, M; ZUKOTYNSKI, S et al.Canadian journal of physics (Print). 1987, Vol 65, Num 5, pp 505-509, issn 0008-4204Article