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DRIFT VELOCITY OF HOLES IN GERMANIUM AND SILICONNAKAGAWA N; ZUKOTYNSKI S.1979; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1979; VOL. 57; NO 8; PP. 1233-1238; ABS. FRE; BIBL. 35 REF.Article

DETERMINATION OF THE CONDUCTION-BAND STRUCTURE OF THE III-V SEMICONDUCTORS SUBJECT TO MECHANICAL STRAIN FROM MEASUREMENTS OF THE REFLECTIVITY SPECTRUMHOWLETT W; ZUKOTYNSKI S.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6973-6977; BIBL. 5 REF.Article

DETERMINATION OF THE CONDUCTION-BAND STRUCTURE OF INSB SUBJECT TO MECHANICAL STRAIN FROM MEASUREMENTS OF THE REFLECTIVITY SPECTRUMHOWLETT W; ZUKOTYNSKI S.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6978-6983; BIBL. 25 REF.Article

THE VALENCE BANDSTRUCTURE AND THE HOLE MOBILITY IN SILICON.NAKAGAWA H; ZUKOTYNSKI S.1977; CANADA J. PHYS.; CANADA; DA. 1977; VOL. 55; NO 17; PP. 1485-1491; ABS. FR.; BIBL. 19 REF.Article

EFFECT OF DEFORMATION ON THE CONDUCTION BAND OF III-V SEMICONDUCTORS.HOWLETT W; ZUKOTYNSKI S.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3688-3693; BIBL. 10 REF.Article

PHOTOCONDUCTIVITY OF SCANDIUM-DOPED GAAS.NAKAGAWA H; ZUKOTYNSKI S.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4809-4811; BIBL. 11 REF.Article

SURFACE PHOTOVOLTAGE IN GE-DOPED P-TYPE ALXGA1-XASKALNITSKY A; ZUKOTYNSKI S; SUMSKI S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4744-4747; BIBL. 21 REF.Article

Failure of Al-SiO2-Si MOS capacitors at high temperaturesWENXIN XU; ZUKOTYNSKI, S.Journal of the Electrochemical Society. 1993, Vol 140, Num 7, pp 2063-2065, issn 0013-4651Article

High-temperature dielectric breakdown of silicon dioxide films with aluminum electrodesFORBES, R; ZUKOTYNSKI, S.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 736-739, issn 0013-4651, 4 p.Article

IMPLICATIONS OF THE CHANGE IN WORK FUNCTION OF CHROMIUM BY THE PRESENCE OF HYDROGEN ON THE PROPERTIES OF ELECTRICAL CONTACT BETWEEN CHROMIUM AND HYDROGENATED AMORPHOUS SILICONSZADKOWSKI AJ; KALNITSKY A; MA KB et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 557-558; BIBL. 8 REF.Article

ELECTRICAL PROPERTIES OF GE-DOPED P-TYPE ALXGA1-XASZUKOTYNSKI S; SUMSKI S; PANISH MB et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5795-5799; BIBL. 20 REF.Article

Single wafer miniature Hall-effect keyboardCHER MING TAN; ZUKOTYNSKI, S.IEEE transactions on industrial electronics (1982). 1989, Vol 36, Num 3, pp 446-450, issn 0278-0046, 5 p.Article

The electric-field assisted solid-state reaction of aluminum and silicon dioxideFORBES, R; ZUKOTYNSKI, S.Journal of the Electrochemical Society. 1989, Vol 136, Num 9, pp 2651-2653, issn 0013-4651, 3 p.Article

Monohydride clustering in the amorphous silicon matrixSIDHU, L. S; ZUKOTYNSKI, S.Journal of non-crystalline solids. 1999, Vol 246, Num 1-2, pp 65-72, issn 0022-3093Article

COMPOUND FORMATION BETWEEN AMORPHOUS SILICON AND CHROMIUM = FORMATION DE COMPOSE ENTRE SI AMORPHE ET CRYACOBI BG; SZADKOWSKI AJ; ZUKOTYNSKI S et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6424-6425; BIBL. 5 REF.Article

Density of states of inhomogeneous hydrogenated amorphous siliconGASPARI, F; ZUKOTYNSKI, S; PERZ, J. M et al.Journal of non-crystalline solids. 1992, Vol 143, Num 2-3, pp 241-245, issn 0022-3093Article

On the weak-field magnetoresistance of holes in Ge and SiNAKAGAWA, H; ZUKOTYNSKI, S; REGGIANI, L et al.Journal of applied physics. 1984, Vol 56, Num 6, pp 1687-1695, issn 0021-8979Article

Electronic properties of n-i-n-i doping superlatticesTAN, C. M; XU, J. M; ZUKOTYNSKI, S et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2921-2933, issn 0021-8979Article

Electrical transport properties of CdSe thin-film transistors with Cr contactsWAECHTER, D; LEITH, G; ZUKOTYNSKI, S et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 229-235, issn 0008-4204, 7 p.Conference Paper

Structure of hydrogenated amorphous carbon deposited using saddle-field glow-discharge in methaneSAGNES, E; SZURMAK, J; MANAGE, D et al.Journal of non-crystalline solids. 1999, Vol 249, Num 1, pp 69-79, issn 0022-3093Article

Localized-capture-state model for the capture kinetics of the DX center in AlxGa1-xAsLEITH, G. A; ZUKOTYNSKI, S; SPRINGTHORPE, A. J et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 7, pp 3340-3343, issn 0163-1829Article

An effective-mass model of hydrogenated amorphous silicon : a tail state analysisO'LEARY, S. K; ZUKOTYNSKI, S; PERZ, J. M et al.Journal of applied physics. 1992, Vol 72, Num 6, pp 2272-2281, issn 0021-8979Article

Spatially resolved space-charge density in the hydrogenated amorphous silicon schottky barrier from surface photovoltage measurementsUKAH, C. I; PERZ, J. M; ZUKOTYNSKI, S et al.Journal of applied physics. 1990, Vol 67, Num 10, pp 6486-6489, issn 0021-8979Article

Effect of current density on the electrochemical dissolution of germanium and zinc selenideCHER MING TAN; ZUKOTYNSKI, S; MAR, H et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3970-3972, issn 0013-4651, 3 p.Article

Surface photovoltage spectroscopy in hydrogenated amorphous siliconUKAH, C. I; PERZ, J. M; ZUKOTYNSKI, S et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3617-3630, issn 0021-8979Article

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