EFFECT OF MOLECULAR REORIENTATION IN UREA ON THE ¹⁴N PNQR LINEWIDTH AND RELAXATION TIMEZUSSMAN A.1973; J. CHEM. PHYS.; U.S.A.; DA. 1973; VOL. 58; NO 4; PP. 1514-1522; BIBL. 12 REF.Serial Issue

electrical properties of Schottky diodes of Ti on highly doped GaAsZUSSMAN, A.Journal of applied physics. 1986, Vol 59, Num 11, pp 3894-3900, issn 0021-8979Article

LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB_0-85SN_0-15 TE DIODE LASER WITH CONTROLLED CARRIER CONCENTRATIONORON M; ZUSSMAN A.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 7-9; BIBL. 8 REF.Article

¹⁴N PNQR INVESTIGATION OF THE EFFECT OF PRESSURE ON PHASE TRANSITION IN MALONONITRILE.ZUSSMAN A; RAPOPORT E.1977; J. CHEM. PHYS.; U.S.A.; DA. 1977; VOL. 66; NO 12; PP. 5330-5334; BIBL. 19 REF.Article

¹⁴N PNQR STUDY OF THE EFFECT OF PRESSURE ON THE PHASE TRANSITION AND MOLECULAR REORIENTATION IN 5-TRIAZINE.ORON M; ZUSSMAN A; RAPOPORT E et al.1978; J. CHEM. PHYS.; U.S.A.; DA. 1978; VOL. 68; NO 3; PP. 794-798; BIBL. 11 REF.Article

Properties of liquid-phase epitaxy grown Pb_1-xSn_xTe homostructure diode lasers with Ga-doped cladding layerSHAHAR, A; ZUSSMAN, A.Journal of applied physics. 1988, Vol 64, Num 9, pp 4306-4317, issn 0021-8979Article

Optical properties of metal-clad/Pb_1-x Sn_xTe waveguidesSHAHAR, A; ZUSSMAN, A.IEE proceedings. Part J. Optoelectronics. 1988, Vol 135, Num 5, pp 349-354, issn 0267-3932Article

TUNNELING-DETERMINED THRESHOLD CURRENT IN PB_1-XSN_XTE DIODE LASERSEGER D; ORON M; ZEMEL A et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 471-473; BIBL. 24 REF.Article

Laser action and photoluminescence in an indium-doped n-type Hg_1-xCd_xTe (x=0.375) layer grown by liquid phase epitaxyRAVID, A; ZUSSMAN, A.Journal of applied physics. 1993, Vol 73, Num 8, pp 3979-3987, issn 0021-8979Article

THE SPECTRAL RESPONSE OF PBTE/PB₁-_XSN_XTE HETEROSTRUCTURE DIODES AT LOW TEMPERATURESEGER D; ORON M; ZUSSMAN A et al.1983; INFRARED PHYSICS; ISSN 0020-0891; GBR; DA. 1983; VOL. 23; NO 2; PP. 69-76; BIBL. 22 REF.Article

RECOMBINATION MECHANISMS AND LASING THRESHOLD IN PB-SN-TL DIODE LASERSORON M; ZUSSMAN A; EGER D et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 90; NO 2; PP. 175-180; BIBL. 17 REF.Conference Paper

Photoluminescence and laser action of Hg_1-xCd_xTe (x~0.5) layer grown by liquid-phase epitaxyRAVID, A; ZUSSMAN, A.Journal of applied physics. 1990, Vol 67, Num 9, pp 4260-4269, issn 0021-8979, 1Article

JUNCTION MIGRATION IN PBTE-PBSNTE HETEROSTRUCTURESEGER D; ZEMEL A; ROTTER S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 490-495; BIBL. 16 REF.Article

Photoluminescence study of HgZnTe alloysRAVID, A; SHER, A; ZUSSMAN, A et al.Journal of applied physics. 1990, Vol 68, Num 7, pp 3592-3597, issn 0021-8979, 6 p.Article

Long wavelength GaAs/AI_xGa_1-xAs quantum well infrared photodetectors grown using metal organic chemical vapor depositionZUSSMAN, A; LEVINE, B. F; HOBSON, W. S et al.Journal of electronic materials. 1992, Vol 21, Num 8, pp 799-803, issn 0361-5235Article

Optically pumped laser oscillation at ∼2.9 μm of a HgCdTe layer grown by metalorganic chemical vapor depositionRAVID, A; ZUSSMAN, A; CINADER, G et al.Applied physics letters. 1989, Vol 55, Num 26, pp 2704-2706, issn 0003-6951Article

PbSnTe diode lasers incorporating passive waveguidesKAPON, E; ZUSSMAN, A; KATZIR, A et al.Journal of applied physics. 1984, Vol 56, Num 11, pp 3336-3337, issn 0021-8979Article

Diffusion length and lifetime in highly Ga-doped PbSnTe layers grown by liquid-phase epitaxySHAHAR, A; FEIT, Z; ZUSSMAN, A et al.Journal of applied physics. 1989, Vol 66, Num 6, pp 2455-2457, issn 0021-8979, 3 p.Article

19 μm cutoff long-wavelength GaAs/Al_xGa_1-xAs quantum-well infrared photodetectorsLEVINE, B. F; ZUSSMAN, A; KUO, J. M et al.Journal of applied physics. 1992, Vol 71, Num 10, pp 5130-5135, issn 0021-8979Article

Photoelectromagnetic effect in p-type HgCdTe layers grown by liquid phase epitaxyMORDOWICZ, D; ZEMEL, A; ZUSSMAN, A et al.Applied physics letters. 1987, Vol 51, Num 26, pp 2239-2241, issn 0003-6951Article

Extended long-wavelength λ = 11-15-μm GaAs/Al_xGa_1-xAs quantum-well infrared photodetectorsZUSSMAN, A; LEVINE, B. F; KUO, J. M et al.Journal of applied physics. 1991, Vol 70, Num 9, pp 5101-5107, issn 0021-8979Article

Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illuminationSHAFIR, I; KATZ, M; SHER, A et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045004.1-045004.3Article

Carbon-doped long wavelength GaAs/Al_xGa_1-xAs quantum well infrared photodetectors grown by organometallic vapor phase epitaxyHOBSON, W. S; ZUSSMAN, A; LEVINE, B. F et al.Journal of applied physics. 1992, Vol 71, Num 7, pp 3642-3644, issn 0021-8979Article

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectorsLEVINE, B. F; ZUSSMAN, A; GUNAPALA, S. D et al.Journal of applied physics. 1992, Vol 72, Num 9, pp 4429-4443, issn 0021-8979Article

A monolithic LWIR/NIR multispectral QWIP for night vision and see spotCOHEN, N; ZUSSMAN, A; SARUSI, G et al.Infrared physics & technology. 2001, Vol 42, Num 3-5, pp 391-396, issn 1350-4495Conference Paper