A new ZnSe1-xTex scintillator: luminescence mechanismeRYZHIKOV, V. D; SILIN, V. I; STARZHINSKY, N. G et al.Nuclear tracks and radiation measurements (1993). 1993, Vol 21, Num 1, pp 53-54, issn 0969-8078Conference Paper

Switching mechanism in ZnTe filmsPATEL, S. M; PATEL, N. G.Thin solid films. 1984, Vol 113, Num 3, pp 185-188, issn 0040-6090Article

LOCALISATION PAR CANALISATION DES IMPURETES IMPLANTEES DANS LE ZNTE.BONTEMPS A; FONTENILLE J; LIGEON E et al.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 1; PP. 126; ABS. ANGL; (METHODES ACTUELLES ANAL. SOLIDES. COLLOQ. EXPO. COMMUN.; DIJON; 1975)Conference Paper

SUR LA QUESTION DES TRANSGRESSIONS APPARENTES DE LA LOI D'ARRHENIUS DANS L'OBTENTION DU TELLURURE DE ZINCORMONT BF; CHESNOKOVA DB.1976; ZH. PRIKL. KHIM.; S.S.S.R.; DA. 1976; VOL. 49; NO 10; PP. 2199-2202; BIBL. 16 REF.Article

THE CRYSTALLIZATION OF ALPHA .ZNTE.WEBB JB; BRODIE DE.1975; CANAD. J. PHYS.; CANADA; DA. 1975; VOL. 53; NO 22; PP. 2481-2484; ABS. FR.; BIBL. 7 REF.Article

The electrooptical properties of ZnSe-ZnTe heterojunctionsFIRSZT, F; LOZYKOWSKI, H. J.Acta physica Polonica. A. 1983, Vol 64, Num 1, pp 9-19, issn 0587-4246Article

A ZNTE THIN FILM MEMORY DEVICEBURGELMAN M.1980; ELECTROCOMPON. SCI. TECHNOL.; ISSN 0305-3091; GBR; DA. 1980; VOL. 7; NO 1-3; PP. 93-96; BIBL. 9 REF.Article

GROWTH OF ZNTE BY STOICHIOMETRIC AND OFF STOICHIOMETRIC ZONE REFINING.TRIBOULET R; DIDIER G.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 29-35; BIBL. 25 REF.Article

Luminescence of ZnSe(Te) crystals melt : grown from the charge enriched in seleniumRYZHIKOV, V. D; GAL'CHINETSKII, L. P; GALKIN, S. N et al.SPIE proceedings series. 1998, pp 302-304, isbn 0-8194-2808-6Conference Paper

ENERGY LOSS AND PROJECTED RANGE OF ALPHA PARTICLES IN ZINC TELLURIDE.BONTEMPS A; LIGEON E; FONTENILLE J et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 3; PP. 181-184; BIBL. 9 REF.Article

Microwave synthesis, growth and characterization of ZnTeBHUNIA, S; BOSE, D. N.SPIE proceedings series. 1998, pp 158-164, isbn 0-8194-2756-X, 2VolConference Paper

Transmission non linéaire d'un rayonnement laser par les monocristaux de ZnTe aux températures de l'hélium liquideZYUL'KOV, V. A; GRIBKOVSKIJ, V. P; IVANOV, V. A et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1893-1896, issn 0015-3222Article

CHANNELLING STUDIES OF ION IMPLANTATION INDUCED LATTICE DEFECTS IN ZINC TELLURIDE.BONTEMPS A; LIGEON E; DANIELOU R et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 3; PP. 195-204; BIBL. 50 REF.Article

Electron paramagnetic resonance of Mn²⁺ in strained-layer semiconductor superlatticesQAZZAZ, M; YANG, G; XIN, S. H et al.Solid state communications. 1995, Vol 96, Num 6, pp 405-409, issn 0038-1098Article

Thermodynamic properties of Zn in Te-saturated ZnSe-ZnTe solid solutionsNASAR, A.Journal of alloys and compounds. 1994, Vol 209, pp 197-202, issn 0925-8388Article

Spectroscopic cathodoluminescence studies of the ZnTe:Cu contact process for CdS/CdTe solar cellsGESSERT, T. A; ROMERO, M. J; JOHNSTON, S et al.sans titre. 2002, pp 535-538, isbn 0-7803-7471-1, 4 p.Conference Paper

Silicon and zinc telluride nanoparticles synthesized by pulsed laser ablation : size distributions and nanoscale structureLOWNDES, D. H; ROULEAU, C. M; THUNDAT, T et al.Applied surface science. 1998, Vol 127-29, pp 355-361, issn 0169-4332Conference Paper

Investigations of the thermodynamic properties of Te-saturated ZnSe-ZnTe solid solutionsNASAR, A.Journal of alloys and compounds. 1995, Vol 217, Num 2, pp 167-175, issn 0925-8388Article

Spin-orbit interaction in metals, elementary semiconductors, and semiconductor compounds = Interaction spin-orbite dans les métaux, les semiconducteurs élémentaires et les composés semiconducteursMASOVIC, D. R; VUKAJLOVIC, F. R.Journal of computational physics (Print). 1983, Vol 50, Num 3, pp 505-512, issn 0021-9991Article

Characterization of single-sided charge-sharing CZT strip detectors for gamma-ray astronomyDÖNMEZ, Burcin; MACRI, John R; RYAN, James M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63190A.1-63190A.9, issn 0277-786X, isbn 0-8194-6398-1, 1VolConference Paper

Dislocation of high quality P-doped ZnTe substrate examined by X-ray topographyYOSHINO, K; KAKENO, T; YONETA, M et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 7, pp 445-448, issn 0957-4522, 4 p.Conference Paper

Electronic structure and magnetism of diluted magnetic semiconductor (Zn, Cr)TeSHOREN, Haruki; TANAKA, Norikazu; MOTIZUKI, Kazuko et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 2033-2035, issn 0304-8853, 2Conference Paper

Array of virtual Frisch-grid CZT detectors with common cathode readout and pulse-height correctionBOLOTNIKOV, A. E; CAMARDA, G. S; KOPACH, O. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7805, issn 0277-786X, isbn 978-0-8194-8301-0, 780504.1-780504.12Conference Paper

Macro and microscopic growth interface study of CdZnTe ingots by THM techniqueROY, U. N; WEILER, S; STEIN, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7805, issn 0277-786X, isbn 978-0-8194-8301-0, 780502.1-780502.8Conference Paper

BLOOMING CHARACTERISTICS OF A SOLID-STATE IMAGER OVERLAID WITH A PHOTOCONDUCTORCHIKAMURA T; MIYATA Y; OHTA Y et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1857-1862; BIBL. 16 REF.Article