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Results 1 to 25 of 1383

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FLOAT-ZONING OF SEMICONDUCTOR SILICON: A PERSPECTIVEKRAMER HG.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 137-142; BIBL. 37 REF.Article

PREPARATION OF HIGH-RESISTIVITY SILICON BY VACUUM FLOAT ZONING.DIGGES TG JR; YAWS CL.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1222-1227; BIBL. 4 REF.Article

INHOMOGENEITIES DUE TO THERMOCAPILLARY FLOW IN FLOATING ZONE MELTING.CHANG CE; WILCOX WR.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 8-12; BIBL. 13 REF.Article

PROPOSED FLOATING-ZONE, IMMERSED-HEATER METHOD FOR THE GROWTH OF TRIGONAL SELENIUM SINGLE CRYSTALS.SWINEHART PR.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 2; PP. 317-318; BIBL. 7 REF.Article

UNTERSUCHUNGEN ZUR NEUBILDUNG VON VERSETZUNGEN BEI DER TIEGELFREIEN ZUECHTUNG VON SILIZIUM-EINKRISTALLEN. = ETUDES DE LA NOUVELLE FORMATION DE DISLOCATIONS LORS DU TIRAGE SANS CREUSET DE MONOCRISTAUX DE SILICIUMSCHROEDER W; WOLF E.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 3; PP. 275-280; ABS. ANGL.; BIBL. 9 REF.Article

LIQUID ENCAPSULATED FLOATING ZONE MELTING OF GAAS.JOHNSON ES.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 249-256; BIBL. 12 REF.Article

EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON CRYSTALS.DE KOCK AJR; ROKSNOER PJ; BOONEN PGT et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 4; PP. 311-320; BIBL. 28 REF.Article

CROISSANCE DE MONOCRISTAUX DE SILICIUM DOPES DE GROS DIAMETRE ET EXEMPTS DE DISLOCATIONBIET JP; LAUVRAY H; SIMON H et al.1972; DGRST-71 72 742; FR.; DA. 1972; PP. 1-33; H.T. 7; (RAPP. FINAL, ACTION CONCERTEE: C.C.M.)Report

GROWTH OF HIGH PURITY LAB6 SINGLE CRYSTALS BY MULTI-FLOAT ZONE PASSAGE.TANAKA T; BANNAI E; KAWAI S et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 193-197; BIBL. 10 REF.Article

MISE EN OEUVRE D'UNE TECHNIQUE DE CROISSANCE DE CRISTAUX DE SILICIUM SANS OXYGENE, DE HAUTRE PERFECTION CRISTALLINE ET DE GRAND DIAMETREBOUCHAUD JP.1972; DGRST-71 72 818; FR.; DA. 1972; PP. (55 P.); BIBL. 1 P.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

CROISSANCE SELON UNE TECHNIQUE ZONE FLOTTEE AMELIOREE DE MONOCRISTAUX DE SILICIUM SANS OXYGENE, DE HAUTE PERFECTION CRISTALLINE ET DE GRAND DIAMETRE.BOUCHAUD JP.1974; DGRST-7371352; FR.; DA. 1974; PP. (45P.); BIBL. 3 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES MATER.)Report

FLOAT-ZONED SILICON WITH HOMOGENEOUS DOPANT DISTRIBUTION.KELLER W; MUHLBAUER A.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 149-152; ABS. ALLEM.; BIBL. 4 REF.Article

A liquid-bridge model for the float-zone processing of materialsBOUCHER, E. A; EVANS, M. J. B.Journal of the Chemical Society. Faraday Transactions I. 1985, Vol 81, Num 11, pp 2787-2796, issn 0300-9599Article

Confinement of thermocapillary floating zone flow by uniform rotationFOWLIS, W. W; ROBERTS, G. O.Journal of crystal growth. 1986, Vol 74, Num 2, pp 301-320, issn 0022-0248Article

Single crystal growth of the ternary alloy zirconium-niobium-cobalt (Zr68.5Nb30Co1.5) by a floating zone technique = Croissance de monocristaux de l'alliage ternaire zirconium-niobium-cobalt (Zr68,5Nb30Co1,5) par une technique de zone flottanteFLOTTMANN, T; BEYSS, M; PELZER, P et al.Journal of crystal growth. 1988, Vol 87, Num 2-3, pp 213-216, issn 0022-0248Article

Thermocapillary flow in a tough or float zoneSEN, A. K; FLORYAN, J. M; STEEN, P. H et al.European mechanics colloquium. 138. sd, pp 127-128Conference Paper

N-TYPE (PHOSPHORUS) DOPING OF SILICON BY ZONE MELTING USING A SOLID DOPANT SOURCE.NANGIA OP; BAL M; BAGAI RK et al.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 1; PP. 14-16; BIBL. 14 REF.Article

A GAS BEARING SYSTEM FOR THE GROWTH OF CDTE.TRANCHART JC; BACH P.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 1; PP. 8-12; BIBL. 6 REF.Article

CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING-ZONE SILICON CRYSTALS.PETROFF PM; DE KOCK AJR.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 1; PP. 117-124; BIBL. 18 REF.Article

GROWTH AND MICROSTRUCTURAL CONTROL OF SINGLE CRYSTAL CUPROUS OXIDE CU2O.SCHMIDT WHITLEY RD; MARTINEZ CLEMENTE M; REVCOLEVSCHI A et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 2; PP. 113-120; BIBL. 22 REF.Article

ON THE NATURE OF SWIRL DEFECTS IN FLOAT ZONE SI CRYSTALS.PETROFF PM; DE KOCK AJR.1976; J. CRYST. GROWTH.; NETHERL.; DA. 1976; VOL. 35; NO 3; PP. 345-346; BIBL. 9 REF.Article

A COMMENT ON THE "CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING ZONE SI CRYSTALS" BY P.M. PETROFF AND A.J.R. DE KOCK.MATTHEWS JW; VAN VECHTEN JA; PETROFF PM et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 35; NO 3; PP. 343-346; BIBL. 31 REF.Article

FORMATION AND ELIMINATION OF GROWTH STRIATIONS IN DISLOCATION-FREE SILICON CRYSTALS.DE KOCK AJR; ROKSNOER PJ; BOONEN PGT et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. 125-137; BIBL. 62 REF.Article

THE INTRODUCTION OF DISLOCATIONS DURING THE GROWTH OF FLOATING-ZONE SILICON CRYSTALS AS A RESULT OF POINT DEFECT CONDENSATION.DE KOCK AJR; ROKSNOER PJ; BOONEN PGT et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 3; PP. 279-294; BIBL. 48 REF.Article

SINGLE CRYSTAL GROWING APPARATUS USING INFRARED HEATING.MIZUTANI T; MATSUMI K; MAKINO H et al.1974; N.E.C. RES. DEVELOP.; JAP.; DA. 1974; NO 33; PP. 86-92; BIBL. 9 REF.Article

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