A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrierDA MING CHEN; ZONG CUN LIANG; LIN ZHUANG et al.Applied energy. 2012, Vol 92, pp 315-321, issn 0306-2619, 7 p.Article

Determination of the optical constants of solar-control amorphous silicon thin films on float glassYONG LIU; LIHONG NI; JUN BO LIU et al.Surface and interface analysis. 2009, Vol 41, Num 7, pp 573-576, issn 0142-2421, 4 p.Article

Photoconductivity during 30ns laser pulses in a-Si:HTZANETAKIS, P; KOPIDAKIS, N; FRITESCHE, H et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 276-279, issn 0022-3093, 1Conference Paper

Fabrication and photovoltaic properties of Cu₂ZnSnS₄/i-a-Si/n-a-Si thin film solar cellsFENG JIANG; HONGLIE SHEN.Applied surface science. 2013, Vol 280, pp 138-143, issn 0169-4332, 6 p.Article

Electron emission from amorphous silicon thin filmsSILVA, S. R. P; FORREST, R. D; SHANNON, J. M et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1101-1105, issn 0022-3093, bConference Paper

Residual stress and hardness behaviors of the two-layer C/Si filmsCHUNG, C. K; PENG, C. C; WU, B. H et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1149-1153, issn 0257-8972, 5 p.Conference Paper

Nickel-assisted metal-induced crystallization of silicon : Effect of native silicon oxide layerPEREIRA, L; MARTINS, R. M. S; SCHELL, N et al.Thin solid films. 2006, Vol 511-12, pp 275-279, issn 0040-6090, 5 p.Conference Paper

A structural study of CN treated amorphous siliconYAMAZAKI, Yuji; SHIRAI, Koun; KATAYAMA-YOSHIDA, Hiroshi et al.Solid state communications. 2003, Vol 126, Num 10, pp 597-600, issn 0038-1098, 4 p.Article

The long-range ordering, electron spectrum, and properties of amorphous silicon films - II. Defect states and optical parametersLIGATCHEV, V.Physica. B, Condensed matter. 2003, Vol 337, Num 1-4, pp 346-356, issn 0921-4526, 11 p.Article

Interaction of amorphous Si and crystalline Al thin films during low-temperature annealing in vacuumZHAO, Y. H; WANG, J. Y; MITTEMEIJER, E. J et al.Thin solid films. 2003, Vol 433, Num 1-2, pp 82-87, issn 0040-6090, 6 p.Conference Paper

Use of real-time ion-mass spectrometry and discharge voltage trending for analysis of a-Si DC plasma CVD processesGANGULY, G; NEWTON, J; CARLSON, D. E et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 53-57, issn 0022-3093, aConference Paper

Ab initio studies of the atomic and electronic structure of pure and hydrogenated a-SiVALLADARES, A. A; ALVAREZ, F; LIU, Z et al.The European physical journal. B, Condensed matter physics. 2001, Vol 22, Num 4, pp 443-453, issn 1434-6028Article

Non-linearity of diffusion in amorphous Si-Ge multilayersCSIK, A; BEKE, D. L; LANGER, G. A et al.Vacuum. 2001, Vol 61, Num 2-4, pp 297-301, issn 0042-207XConference Paper

Silicidation in chromium-amorphous silicon multilayer filmsBOUABELLOU, A; HALIMI, R; MIROUH, K et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 296-298, issn 0040-6090Conference Paper

Process integration issues in thin-film photovoltaics and their impact on future research directionsSHELDON, P.Progress in photovoltaics. 2000, Vol 8, Num 1, pp 77-91, issn 1062-7995Article

Photovoltaic materials, past, present, futureGOETZBERGER, A; HEBLING, C.Solar energy materials and solar cells. 2000, Vol 62, Num 1-2, pp 1-19, issn 0927-0248Article

Pressure control in tight-binding molecular dynamics : Application to a-Si formationKLEIN, P; URBASSEK, H. M.Physica status solidi. B. Basic research. 1998, Vol 207, Num 1, pp 33-44, issn 0370-1972Article

Thermal transient analysis of thin film multilayers heated by pulsed laserANGELUCCI, N; BIANCO, N; MANCA, O et al.International journal of heat and mass transfer. 1997, Vol 40, Num 18, pp 4487-4491, issn 0017-9310Article

Metal-oxide-Si capacitors hot-electron and radiation hardness improvement by gate electrodes deposited using amorphous Si and gate oxides rapid thermal annealed in N₂OCHANG-LIAO, K.-S; CHEN, L.-C.Japanese journal of applied physics. 1997, Vol 36, Num 5B, pp L604-L606, issn 0021-4922, 2Article

Critical thickness for the solid phase epitaxy : Si/Sb/Si(001)KONO, S; GOTO, T; OGURA, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 9B, pp L1211-L1214, issn 0021-4922, 2Article

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealingKASSNER, M. E; WEBER, F. J; KOIKE, J et al.Journal of materials science. 1996, Vol 31, Num 9, pp 2291-2299, issn 0022-2461Article

Laser induced phase transitions in Si and Ge implanted Si substratesCALCAGNILE, L.Physica status solidi. A. Applied research. 1995, Vol 151, Num 1, pp 23-32, issn 0031-8965Article

Long-term degradation tests of amorphous silicon solar cells : correlation between light- and current-induced degradation characteristicsYANAGISAWA, T.Microelectronics and reliability. 1995, Vol 35, Num 2, pp 183-187, issn 0026-2714Article

Raman spectroscopy and positron lifetime studies of structural relaxation and defect evolution in amorphous siliconHIROYAMA, Y; SUZUKI, R; HIRANO, Y et al.Japanese journal of applied physics. 1995, Vol 34, Num 10, pp 5515-5519, issn 0021-4922, 1Article

Potential distribution and interface states in the input stage of an amorphous silicon thin-film transistorLONG, A. R; CHAHDI, M; RODLEY, D. G et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 69, Num 2, pp 223-236, issn 0958-6644Article