kw.\*:("magnetoresistive random access memory (MRAM)")
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All-Magnetic, Nonvolatile, Addressable Chainlink MemoryBROMBERG, David M; MORRIS, Daniel H; PILEGGI, Larry et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4394-4397, issn 0018-9464, 4 p.Conference Paper
Exchange coupling control and thermal endurance of synthetic antiferromagnet structures for MRAMPIETAMBARAM, Srinivas V; JANESKY, Jason; DAVE, Renu W et al.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 2619-2621, issn 0018-9464, 3 p., 2Conference Paper
Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arraysYUN KI LEE; BYONG SUN CHUN; YOUNG KEUN KIM et al.IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 883-886, issn 0018-9464, 4 p.Conference Paper
Switching current fluctuation and repeatability for MRAM with propeller-shape MTJSHIMOMURA, Naoharu; YODA, Hiroaki; SHIMIZU, Yuui et al.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 2757-2759, issn 0018-9464, 3 p.Conference Paper
1.8 V power supply 16 Mb-MRAMs with 42.3% array efficiencyYODA, Hiroaki; KAI, Tadashi; TAKAHASHI, Shigeki et al.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 2724-2726, issn 0018-9464, 3 p.Conference Paper
Magnetization Dynamics in CoFeB Buffered Perpendicularly Magnetized Co/Pd MultilayerSAJITHA, E. P; WALOWSKI, Jakob; WATANABE, D et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 2056-2059, issn 0018-9464, 4 p.Conference Paper
Bit Storage by 360° Domain Walls in Ferromagnetic NanoringsMURATOV, Cyrill B; OSIPOV, Viatcheslav V.IEEE transactions on magnetics. 2009, Vol 45, Num 8, pp 3207-3209, issn 0018-9464, 3 p.Article
Effect of damping constant on magnetic switching in spin torque driven perpendicular MRAMXIAOCHUN ZHU; ZHU, Jian-Gang.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2349-2351, issn 0018-9464, 3 p.Conference Paper
Disturb robust switching astroid curve of C-shape cell with weakly coupled synthetic antiferromagnetic layerNAKAYAMA, Masahiko; KAI, Tadashi; IKEGAWA, Sumio et al.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 2733-2735, issn 0018-9464, 3 p.Conference Paper
Edge domain dependent pinning effect by stray field in patterned magnetic tunnel junctionSHIMOMURA, Naoharu; KISHI, Tatsuya; YOSHIKAWA, Masatoshi et al.IEEE transactions on magnetics. 2005, Vol 41, Num 10, pp 2652-2654, issn 0018-9464, 3 p.Conference Paper
Improvement of switching field in magnetic tunneling junction using Ru/Ta capping layerYEN, Cheng-Tyng; CHEN, Wei-Chuan; WANG, Yung-Hung et al.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 2748-2750, issn 0018-9464, 3 p.Conference Paper
Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic ModelingMAKAROV, Alexander; SVERDLOV, Viktor; OSINTSEV, Dmitry et al.IEEE transactions on magnetics. 2012, Vol 48, Num 4, pp 1289-1292, issn 0018-9464, 4 p.Conference Paper
Improvement of transport properties in magnetic tunneling junctions by capping materialsSHEN, Chih-Ta; YEN, Cheng-Tyng; TSAI, Ming-Jinn et al.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2785-2787, issn 0018-9464, 3 p.Conference Paper
A 4-Mb toggle MRAM based on a novel bit and switching methodENGEL, B. N; AKERMAN, J; SLAUGHTER, J. M et al.IEEE transactions on magnetics. 2005, Vol 41, Num 1, pp 132-136, issn 0018-9464, 5 p., 1Article
Oxygen-mediated Mn diffusion in magnetic tunnel junctions comprising a nano-oxide layerBOEVE, Hans; VANHELMONT, Frederik; ZALM, Peer C et al.IEEE transactions on magnetics. 2004, Vol 40, Num 4, pp 2278-2280, issn 0018-9464, 3 p., 2Conference Paper
Spin Torque Switching of Perpendicularly Magnetized CoFeB-Based Tunnel Junctions With High Thermal ToleranceYAMANE, Kazutaka; HIGO, Yutaka; UCHIDA, Hiroyuki et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4335-4338, issn 0018-9464, 4 p.Conference Paper
Proposal of a Novel Pole Type Structures in Perpendicular MRAM for High Gb/ChipWON, Hyuk; GWAN SOO PARK; DONG SOK KIM et al.IEEE transactions on magnetics. 2009, Vol 45, Num 6, pp 2417-2420, issn 0018-9464, 4 p.Conference Paper
Kink-free design of submicrometer MRAM cellLEE, K. J; WANJUN PARK; TAEWAN KIM et al.IEEE transactions on magnetics. 2003, Vol 39, Num 5, pp 2842-2844, issn 0018-9464, 3 p., 2Conference Paper
Switching Properties in Magnetic Tunnel Junctions With Interfacial Perpendicular Anisotropy: Micromagnetic StudyTOMASELLO, Riccardo; PULIAFITO, Vito; AZZERBONI, Bruno et al.IEEE transactions on magnetics. 2014, Vol 50, Num 7, issn 0018-9464, 7100305.1-7100305.5, 1Article
Spin flop switching of the guided synthetic antiferromagnet MRAMZHENG, Y. K; QIU, J. J; LI, K. B et al.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 2742-2744, issn 0018-9464, 3 p.Conference Paper
Effect of Gilbert damping term on the current induced magnetization switching of ring-shaped spin valve structuresJIE GUO; MANSOOR BIN ABDUL JALIL; SENG GHEE TAN et al.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2923-2925, issn 0018-9464, 3 p.Conference Paper
Unified Analytical Model for Switching Behavior of Magnetic Tunnel JunctionHYEIN LIM; SEUNGJUN LEE; HYUNGSOON SHIN et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 193-195, issn 0741-3106, 3 p.Article
Optimizing write current and power dissipation in MRAMs by using an astroid curveMIYATAKE, Hisatada; SUNAGA, Toshio; UMEZAKI, Hiroshi et al.IEEE transactions on magnetics. 2004, Vol 40, Num 3, pp 1723-1731, issn 0018-9464, 9 p.Article
A vertical MRAM free of write disturbanceXIAOCHUN ZHU; ZHU, Jian-Gang.IEEE transactions on magnetics. 2003, Vol 39, Num 5, pp 2854-2856, issn 0018-9464, 3 p., 2Conference Paper
A process integration of high-performance 64-kb MRAMKIM, H. J; JEONG, W. C; KOH, K. H et al.IEEE transactions on magnetics. 2003, Vol 39, Num 5, pp 2851-2853, issn 0018-9464, 3 p., 2Conference Paper