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Photocatalytic activity of N-doped anatase grown in the grain boundaries of dense TiN_1-x bulks by oxidation with H₂O₂SUAREZ-VAZQUEZ, Santiago I; NANKO, Makoto.Applied surface science. 2014, Vol 307, pp 401-406, issn 0169-4332, 6 p.Article

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Synthesis, Structural and Electrical Investigations of Gd-and Cr-Doped BaTi0₃ Nanoparticle CeramicsMADOLAPPA, Shivanand; SAGAR, Raghavendra; RAIBAGKAR, R. L et al.Ferroelectrics (Print). 2011, Vol 413, pp 37-45, issn 0015-0193, 9 p.Article

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Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivityFRIGERI, C; ATTOLINI, G; BOSI, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S303-S306, SUP1Conference Paper

Device enhancement of hydroxyquinloine-based organic light-emitting diodes using a uniformly mixed electron transporting hostCHOY, W. C. H; FONG, H. H; HUI, K. N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 593721.1-593721.9, issn 0277-786X, isbn 0-8194-5942-9, 1VolConference Paper

Photocatalytic hydrogen production by direct sun light from sulfide/sulfite solutionKOCA, Atif; SAHIN, Musa.International journal of hydrogen energy. 2002, Vol 27, Num 4, pp 363-367, issn 0360-3199Article

Characteristics and device design of sub-100 nm strained si N- and PMOSFETsRIM, K; CHU, J; OTT, J et al.Symposium on VLSI technology. 2002, pp 98-99, isbn 0-7803-7312-X, 2 p.Conference Paper

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Thermoelectric properties and micro-structure characteristics of annealed N-type bismuth telluride thin filmCAI, Zhao-Kun; FAN PING; ZHENG, Zhuang-Hao et al.Applied surface science. 2013, Vol 280, pp 225-228, issn 0169-4332, 4 p.Article

Assessment on thermoelectric power factor in silicon nanowire networksLOHN, Andrew J; COLEMAN, Elane; TOMPA, Gary S et al.Physica status solidi. A, Applications and materials science (Print). 2012, Vol 209, Num 1, pp 171-175, issn 1862-6300, 5 p.Article

Photoelectrochemical property and photocatalytic activity of N-doped TiO₂ nanotube arraysJINGJING XU; YANHUI AO; MINDONG CHEN et al.Applied surface science. 2010, Vol 256, Num 13, pp 4397-4401, issn 0169-4332, 5 p.Article

Field-enhanced-generated leakage current of metal-induced laterally crystallized hydrogenated n-type poly-Si TFTs under hot-carrier stressZHEN ZHU; LAI, Zong-Sheng.Semiconductor science and technology. 2009, Vol 24, Num 8, issn 0268-1242, 095015.1-095015.4Article

N-Doping of Graphene Through Electrothermal Reactions with AmmoniaXINRAN WANG; XIAOLIN LI; LI ZHANG et al.Science (Washington, D.C.). 2009, Vol 324, Num 5928, pp 768-771, issn 0036-8075, 4 p.Article

The influence of energy band bending on the photo-induced electromotive force in extrinsic semiconductorsKONIN, A.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 5, issn 0953-8984, 055225.1-055225.4Article

Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnOWRIGHT, J. S; KHANNA, Rohit; CHEN, J. J et al.Applied surface science. 2007, Vol 253, Num 8, pp 3766-3772, issn 0169-4332, 7 p.Article

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304LHAMADOU, L; KADRI, A; BOUGHRARA, D et al.Applied surface science. 2006, Vol 252, Num 12, pp 4209-4217, issn 0169-4332, 9 p.Article

Modeling of N-well device and N-well field resistorsRAHUL KUMAR SINGH; ROY, J. N.Solid-state electronics. 2006, Vol 50, Num 11-12, pp 1696-1704, issn 0038-1101, 9 p.Article

Thermoelectric power studies of Cu-Co ferritesVENKATESHWARLU, Ch; RAVINDER, D.Journal of alloys and compounds. 2006, Vol 426, Num 1-2, pp 4-6, issn 0925-8388, 3 p.Article