Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("n-type conductors")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 753

  • Page / 31
Export

Selection :

  • and

Comment on second-order piezoresistance coefficients of n-type siliconOHMURA, Y; MORINAGA, W.Japanese journal of applied physics. 1996, Vol 35, Num 3A, pp L280-L281, issn 0021-4922, 2Article

Hydrogen passivation of donors and hydrogen states in heavily doped n-type siliconFUKATA, N; SASAKI, S; FUJIMURA, S et al.Japanese journal of applied physics. 1996, Vol 35, Num 7, pp 3937-3941, issn 0021-4922, 1Article

Different location of photo- and electroluminescence in n-type porous siliconBABANOV, YU. E; BUCHIN, E. YU; PROKAZNIKOV, A. V et al.Physica status solidi. A. Applied research. 1997, Vol 161, Num 1, pp R1-R2, issn 0031-8965Article

High-resistivity n-type silicon prepared by Czochralski growth and untraditional dopingSAL'NIK, Z. A.Inorganic materials. 1998, Vol 34, Num 3, pp 197-200, issn 0020-1685Article

Different morphology aspects of n-type porous siliconBUCHIN, E. YU; CHURILOV, A. B; PROKAZNIKOV, A. V et al.Applied surface science. 1996, Vol 102, pp 431-435, issn 0169-4332Conference Paper

Self-induced birefringence of infrared light in n-GeVASETSKII, V. M; POROSHIN, V. N; SARBEY, O. G et al.Physical review letters. 1993, Vol 71, Num 18, pp 3027-3030, issn 0031-9007Article

Magnetoresistance effect of a current density filament in n-GaAsAOKI, K.Solid state communications. 2000, Vol 116, Num 9, pp 483-487, issn 0038-1098Article

Evolution of defect structures in silicon after low temperature implantation of hydrogenNIELSEN, K. B; NIELSEN, B. B.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 1-2, pp 163-166, issn 0921-5107Article

Breaking the isotropy of porous silicon formation by means of current focusingZEITSCHEL, A; FRIEDBERGER, A; WELSER, W et al.Sensors and actuators. A, Physical. 1999, Vol 74, Num 1-3, pp 113-117, issn 0924-4247Conference Paper

Magnetoresistance related to on-site spin correlations in the nearest neighbor hopping conductivityAGRINSKAYA, N. V; KOZUB, V. I.Solid state communications. 1998, Vol 108, Num 6, pp 355-359, issn 0038-1098Article

Characterization of mid-gap states in HVPE and MOVPE-grown N-type GaNHACKE, P; OKUSHI, H; KURODA, T et al.Journal of crystal growth. 1998, Vol 189-90, pp 541-545, issn 0022-0248Conference Paper

Electron-phonon coupling effect on wakefields in piezoelectric semiconductorsSALIMULLAH, M; SHUKLA, P. K; GHOSH, S. K et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 8, pp 958-960, issn 0022-3727, 3 p.Article

LEED structure analysis of Sb adsorbed Si(001) surfaceMITSUI, T; HONGO, S; URANO, T et al.Surface science. 2001, Vol 482-85, pp 1451-1456, issn 0039-6028, 2Conference Paper

Scanning tunneling microscopy study on c(4 x 4) structure of Si(100)JAE YEOL MAENG; KIM, Sehun.Surface science. 2001, Vol 482-85, pp 1445-1450, issn 0039-6028, 2Conference Paper

Carbon influence on γ-irradiation induced defects in n-type CZ SiVUJICIC, M; BORJANOVIC, V; PIVAC, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 92-95, issn 0921-5107Conference Paper

Laser and thermal annealing effects on the optical properties of n-GaAs [100] crystals : Application to its Schottky diodesKHAN, W. I; MAKDISI, Y; MARAFI, M et al.Physica status solidi. A. Applied research. 2000, Vol 181, Num 2, pp 551-559, issn 0031-8965Article

Ion-induced electron emission as a means of studying energy-and angle-dependent compositional changes of solids bombarded with reactive ions. I. Oxygen bombardment of siliconWITTMAACK, K.Surface science. 1999, Vol 419, Num 2-3, pp 249-264, issn 0039-6028Article

Low-temperature photoluminescence of n-InSe layer semiconductor crystalsABAY, B; EFEOGLU, H; YOGURTCU, Y. K et al.Materials research bulletin. 1998, Vol 33, Num 9, pp 1401-1410, issn 0025-5408Article

Théorie d'échelle appliquée à la transition métal-isolant dans l InP de type n = Scale theory and metal-insulator transition in n type InPEL KAAOUACHI, A; BISKUPSKI, G; BRIGGS, A et al.Annales de chimie (Paris. 1914). 1998, Vol 23, Num 3, pp 475-489, issn 0151-9107Article

Possible n-type dopants in diamond and amorphous carbonPÖYKKÖ, S; KAUKONEN, M; PUSKA, M. J et al.Computational materials science. 1998, Vol 10, Num 1-4, pp 351-355, issn 0927-0256Conference Paper

X-ray diffraction and reflectometry studies of porous silicon : N-type layers and holographic gratingsCHAMARD, V; DOLINO, G; LERONDEL, G et al.Physica. B, Condensed matter. 1998, Vol 248, pp 101-103, issn 0921-4526Conference Paper

Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon filmsLEE, M. Z; CHANG, Y. A; LEE, Chung-Len et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 1, pp G28-G32, issn 0013-4651Article

The n-type metal-oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage currentTOUHAMI, A; BOUHDADA, A.Semiconductor science and technology. 2002, Vol 17, Num 12, pp 1272-1277, issn 0268-1242, 6 p.Article

High pressure Raman studies on n-GaAsVARANDANI, D; DILAWAR, N; CHAKRABORTY, B. R et al.Journal of materials science letters. 2001, Vol 20, Num 1, pp 5-7, issn 0261-8028Article

Photoconductivity of Ge1-xSix single crystals in the range 115-300 KBAKIROV, M. Ya; SHAKHBAZOVA, R. V.Inorganic materials. 2000, Vol 36, Num 2, pp 94-96, issn 0020-1685Article

  • Page / 31