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DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC FunctionalityWANG KANG; WEISHENG ZHAO; ZHAOHAO WANG et al.IEEE transactions on magnetics. 2014, Vol 50, Num 6, issn 0018-9464, 3400207.1-3400207.7, 2Article

Reproducible resistive switching behavior in sputtered CeO2polycrystalline filmsLIN, Chih-Yang; LEE, Dai-Ying; WANG, Sheng-Yi et al.Surface & coatings technology. 2008, Vol 203, Num 5-7, pp 480-483, issn 0257-8972, 4 p.Conference Paper

Resistive Switching in Perovskite-Oxide Capacitor-Type DevicesZHI LUO; HON KIT LAU; PADDY KWOK LEUNG CHAN et al.IEEE transactions on magnetics. 2014, Vol 50, Num 7, issn 0018-9464, 3000904.1-3000904.4, 2Article

Nonvolatile Silicon Memory Using GeOx-Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II-VI Tunnel InsulatorGOGNA, M; SUAREZ, E; CHAN, P.-Y et al.Journal of electronic materials. 2011, Vol 40, Num 8, pp 1769-1774, issn 0361-5235, 6 p.Conference Paper

Control of nanogap junction resistance by imposed pulse voltageMASUDA, Yuichiro; TAKAHASHI, Tsuyoshi; FURUTA, Shigeo et al.Applied surface science. 2009, Vol 256, Num 4, pp 1028-1030, issn 0169-4332, 3 p.Conference Paper

Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structureCHEN, Shih-Ching; CHANG, Ting-Chang; LIU, Po-Tsun et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1287-1291, issn 0257-8972, 5 p.Conference Paper

Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devicesLIN, Chih-Yang; LEE, Dai-Ying; WANG, Sheng-Yi et al.Surface & coatings technology. 2008, Vol 203, Num 5-7, pp 628-631, issn 0257-8972, 4 p.Conference Paper

Novel Nonvolatile L1/L2/L3 Cache Memory Hierarchy Using Nonvolatile-SRAM With Voltage-Induced Magnetization Switching and Ultra Low-Write-Energy MTJFUJITA, Shinobu; NOGUCHI, H; NOMURA, K et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4456-4459, issn 0018-9464, 4 p.Conference Paper

Resistive Switching Behavior of Al/Al2O3/ZrO2/Al Structural Device for Flexible Nonvolatile Memory ApplicationLIN, Chun-Chieh; SU, Che-Ting; CHANG, Chien-Le et al.IEEE transactions on magnetics. 2014, Vol 50, Num 7, issn 0018-9464, 3000704.1-3000704.4, 2Article

Progress and Prospects of Spin Transfer Torque Random Access MemoryCHEN, E; APALKOV, D; KAWAKAMI, R et al.IEEE transactions on magnetics. 2012, Vol 48, Num 11, pp 3025-3030, issn 0018-9464, 6 p.Conference Paper

Trajectory Codes for Flash MemoryANXIAO JIANG; LANGBERG, Michael; SCHWARTZ, Moshe et al.IEEE transactions on information theory. 2013, Vol 59, Num 7, pp 4530-4541, issn 0018-9448, 12 p.Article

After Hard Drives: What Comes Next?KRYDER, Mark H; CHANG SOO KIM.IEEE transactions on magnetics. 2009, Vol 45, Num 10, pp 3406-3413, issn 0018-9464, 8 p.Conference Paper

A New Differential P-Channel Logic-Compatible Multiple-Time Programmable (MTP) Memory Cell With Self-Recovery OperationLEE, Te-Liang; TSAI, Yi-Hung; LIN, Wun-Jie et al.IEEE electron device letters. 2011, Vol 32, Num 5, pp 587-589, issn 0741-3106, 3 p.Article

Thermoelectric Spin-Transfer Torque MRAM With Fast Bidirectional Writing Using Magnonic CurrentMOJUMDER, Niladri N; ROY, Kaushik; ABRAHAM, David W et al.IEEE transactions on magnetics. 2013, Vol 49, Num 1, pp 483-488, issn 0018-9464, 6 p.Article

Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layerSARGENTIS, Ch; GIANNAKOPOULOS, K; TRAVLOS, A et al.Surface science. 2007, Vol 601, Num 13, pp 2859-2863, issn 0039-6028, 5 p.Conference Paper

Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory applicationCHEN, Wei-Ren; CHANG, Ting-Chang; LIU, Po-Tsun et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1333-1337, issn 0257-8972, 5 p.Conference Paper

Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory applicationCHEN, Wei-Ren; CHANG, Ting-Chang; LIU, Po-Tsun et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1292-1296, issn 0257-8972, 5 p.Conference Paper

Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin filmsLIN, Chih-Yang; LIN, Chun-Chieh; HUANG, Chun-Hsing et al.Surface & coatings technology. 2007, Vol 202, Num 4-7, pp 1319-1322, issn 0257-8972, 4 p.Conference Paper

Characterization of MONOS nonvolatile memory by solid phase crystallization on glassZHENGHAI JIN; JUNG, Sungwook; YI, Junsin et al.Surface & coatings technology. 2008, Vol 202, Num 22-23, pp 5637-5640, issn 0257-8972, 4 p.Conference Paper

Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal ImagingZHI LUO; LAU, H. K; CHAN, P. K. L et al.IEEE transactions on magnetics. 2014, Vol 50, Num 7, issn 0018-9464, 3000804.1-3000804.4, 2Article

Multiple-Step Relaxing-Precessional Magnetization SwitchingCHANG, Jui-Hang; CHEN, Hao-Hsuan; CHANG, Ching-Ray et al.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 3876-3879, issn 0018-9464, 4 p.Conference Paper

A NAND flash memory controller for SD/MMC flash memory cardLIN, Chuan-Sheng; DUNG, Lan-Rong.IEEE transactions on magnetics. 2007, Vol 43, Num 2, pp 933-935, issn 0018-9464, 3 p., 2Conference Paper

Fullerene shuttle memory device : Classical molecular dynamics studyJEONG WON KANG; HO JUNG HWANG.Journal of the Physical Society of Japan. 2004, Vol 73, Num 4, pp 1077-1081, issn 0031-9015, 5 p.Article

Influences of preparation methods on bipolar switching properties in copper nitride filmsQIANFEI ZHOU; QIAN LU; YONGNING ZHOU et al.Surface & coatings technology. 2013, Vol 229, pp 135-139, issn 0257-8972, 5 p.Conference Paper

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory DevicesYANG LU; BIN GAO; YIHAN FU et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 306-308, issn 0741-3106, 3 p.Article

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