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Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)RINUS TEK PO LEE; DONG ZHI CHI; YEO, Yee-Chia et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 7, pp 1458-1465, issn 0018-9383, 8 p.Article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1―xGex LayersALPTEKIN, Emre; KIRKPATRICK, Casey Joe; MISRA, Veena et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, issn 0018-9383, 8 p.Article

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