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Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current RatioWU, Yi-Hong; KUO, Po-Yi; LU, Yi-Hsien et al.IEEE electron device letters. 2010, Vol 31, Num 11, pp 1233-1235, issn 0741-3106, 3 p.Article

A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT DevicesLIN, Jyi-Tsong; ENG, Yi-Chuen.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 12, pp 3238-3244, issn 0018-9383, 7 p.Article

Vertical n-Channel Poly-Si Thin-Film Transistors With Symmetric S/D Fabricated by Ni-Silicide-Induced Lateral-Crystallization TechnologyKUO, Po-Yi; CHAO, Tien-Sheng; LAI, Jiou-Teng et al.IEEE electron device letters. 2009, Vol 30, Num 3, pp 237-239, issn 0741-3106, 3 p.Article

High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structureKUO, Po-Yi; CHAO, Tien-Sheng; WANG, Ren-Jie et al.IEEE electron device letters. 2006, Vol 27, Num 4, pp 258-261, issn 0741-3106, 4 p.Article

Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor DepositionKUO, Po-Yi; CHAO, Tien-Sheng; HUANG, Jyun-Siang et al.IEEE electron device letters. 2009, Vol 30, Num 3, pp 234-236, issn 0741-3106, 3 p.Article

Improved electrical characteristics and reliability of MILC poly-Si TTFTS using fluorine-ion implantationCHANG, Chih-Pang; YEWCHUNG SERMON WU.IEEE electron device letters. 2007, Vol 28, Num 11, pp 990-992, issn 0741-3106, 3 p.Article

Low-Frequency Noise in Poly-Si TFT SONOS Memory With a Trigate Nanowire StructureHU, Hsin-Hui; JHENG, Yong-Ren; WU, Yung-Chun et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1698-1700, issn 0741-3106, 3 p.Article

Enhancement of brightness uniformity by a new voltage-modulated pixel design for AMOLED displaysLU, Hau-Yan; LIU, Po-Tsun; CHANG, Ting-Chang et al.IEEE electron device letters. 2006, Vol 27, Num 9, pp 743-745, issn 0741-3106, 3 p.Article

Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELCTU, Chun-Hao; CHANG, Ting-Chang; LIU, Po-Tsun et al.IEEE electron device letters. 2006, Vol 27, Num 4, pp 262-264, issn 0741-3106, 3 p.Article

Reliability Analysis of Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film TransistorsWU, Yi-Hong; LIN, Je-Wei; LU, Yi-Hsien et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2160-2166, issn 0018-9383, 7 p.Article

Electrical Properties of Low-Temperature-Compatible P-Channel Polycrystalline-Silicon TFTs Using High-κ Gate DielectricsYANG, Ming-Jui; CHIEN, Chao-Hsin; LU, Yi-Hsien et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 4, pp 1027-1034, issn 0018-9383, 8 p.Article

Characteristics of self-aligned Si/Ge T-gate poly-Si thin-film transistors with high ON/OFF current ratioKUO, Po-Yi; CHAO, Tien-Sheng; HSIEH, Pei-Shan et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 5, pp 1171-1176, issn 0018-9383, 6 p.Article