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Threshold-Voltage Instability Due to Damage Recovery in Nanoscale NAND Flash MemoriesMICCOLI, Carmine; MONZIO COMPAGNONI, Christian; BELTRAMI, Silvia et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2406-2414, issn 0018-9383, 9 p.Article

An overview of logic architectures inside Flash memory devicesSILVAGNI, Andrea; FUSILLO, Giuseppe; RAVASIO, Roberto et al.Proceedings of the IEEE. 2003, Vol 91, Num 4, pp 569-580, issn 0018-9219, 12 p.Article

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping LayerLIN, Chia-Chun; WU, Yung-Hsien; LIN, Yuan-Sheng et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 3, pp 436-441, issn 1536-125X, 6 p.Article

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Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory ApplicationRYU, Seong-Wan; LEE, Jong-Won; HAN, Jin-Woo et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 3, pp 377-382, issn 0018-9383, 6 p.Article