Electric field modulation of infrared absorption at room temperature in electrochemically self assembled quantum dotsWANG, Y; RAMANATHAN, S; FAN, Q et al.Journal of nanoscience and nanotechnology (Print). 2006, Vol 6, Num 7, pp 2077-2080, issn 1533-4880, 4 p.Article

Quantum confinement regime in silicon nanocrystalsDERR, Julien; DUNN, Kerry; RIABININA, Daria et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 4, pp 668-670, issn 1386-9477, 3 p.Article

Effective band gap of Si nanocrystals embedded in SiO₂ matrixBASKOUTAS, Sotirios; KAPAKLIS, Vassilios; SCHOMMERS, Wolfram et al.Journal of nanoscience and nanotechnology (Print). 2006, Vol 6, Num 7, pp 2037-2041, issn 1533-4880, 5 p.Article

Nanosize semiconductors for photooxidationABRAMS, B. L; WILCOXON, J. P.Critical reviews in solid state and materials sciences. 2005, Vol 30, Num 3, pp 153-182, issn 1040-8436, 30 p.Article

Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell ChannelJIANG, Y; SINGH, N; LIOW, T. Y et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 392-394, issn 0741-3106, 3 p.Article

Attenuated quantum confinement of the exciton in semiconductor nanoparticlesDUSHKIN, C; PAPAZOVA, K; DUSHKINA, N et al.Colloid and polymer science (Print). 2005, Vol 284, Num 1, pp 80-85, issn 0303-402X, 6 p.Article

Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factorsGOURALNIK, A. S; IVANCHENKO, M. V.Solid state communications. 2014, Vol 177, pp 46-49, issn 0038-1098, 4 p.Article

Facile preparation and size-dependent photocatalytic activity of Cu₂O nanocrystals modified titania for hydrogen evolutionLIKUN LI; LEILEI XU; WEIDONG SHI et al.International journal of hydrogen energy. 2013, Vol 38, Num 2, pp 816-822, issn 0360-3199, 7 p.Article

Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructureMAKHIJANI, Rahul M; CHAKRABARTI, S; SINGH, Vijay A et al.Journal of luminescence. 2013, Vol 136, pp 401-406, issn 0022-2313, 6 p.Article

Enhanced efficiency in quantum confined YBO₃:Tb³⁺ nanophosphorYADAV, Raghvendra S; PANDEY, Avinash C.Journal of alloys and compounds. 2010, Vol 494, Num 1-2, issn 0925-8388, L15-L19Article

Synthesis and characterization of electrospun polymer nanofibers incorporated with CdTe nanoparticlesCHO, Kyoungah; KIM, Mihyun; CHOI, Jinyong et al.Synthetic metals. 2010, Vol 160, Num 9-10, pp 888-891, issn 0379-6779, 4 p.Article

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiN_x matrixLIHUA JIANG; XIANGBIN ZENG; XIAO ZHANG et al.Journal of non-crystalline solids. 2011, Vol 357, Num 10, pp 2187-2191, issn 0022-3093, 5 p.Article

Enhanced third-order nonlinear optical susceptibilities of α-FeOOH nanorodsBAOHUA ZHU; JIAYU ZHANG; LIJUN GUO et al.Optical materials (Amsterdam). 2010, Vol 32, Num 9, pp 1244-1247, issn 0925-3467, 4 p.Article

Size effects in the low temperature spectroscopy of Lu₂O₃ nanopowdersZYCH, Eugeniusz; WOJTOWICZ, Marcin; KEPINSKI, Leszek et al.Optical materials (Amsterdam). 2008, Vol 31, Num 2, pp 241-246, issn 0925-3467, 6 p.Article

Silicon quantum dot nanostructures for tandem photovoltaic cellsCONIBEER, Gavin; GREEN, Martin; SHUJUAN HUANG et al.Thin solid films. 2008, Vol 516, Num 20, pp 6748-6756, issn 0040-6090, 9 p.Conference Paper

Compact modeling of the shift between classical and quantum threshold voltages in a III―V nanowireHIBLOT, G; RAFHAY, Q; BOEUF, F et al.Solid-state electronics. 2014, Vol 100, pp 71-78, issn 0038-1101, 8 p.Article

Silicon-rich/silica multilayers : A means to provide a link between the excitonic 1 D quantum confinement and the photoluminescence parametersDUFOUR, C; CHAUSSERIE, S; GOURBILLEAU, F et al.Journal of luminescence. 2009, Vol 129, Num 1, pp 73-80, issn 0022-2313, 8 p.Article

Very High Thermopower of Bi Nanowires with Embedded Quantum Point ContactsSHAPIRA, Eyal; HOLTZMAN, Amir; MARCHAK, Debora et al.Nano letters (Print). 2012, Vol 12, Num 2, pp 808-812, issn 1530-6984, 5 p.Article

Epitaxial growth of Al on Si(111) with Cu buffer layersBAEZA, Patricia A; PEDERSEN, K; RAFAELSEN, J et al.Surface science. 2006, Vol 600, Num 3, pp 610-616, issn 0039-6028, 7 p.Article

Boîtes quantiques dopées avec des ions de terres rares pour l'émission de lumière visible = Quantum boxes doped with rare earth ions for the emission of visible lightDAUDIN, Bruno; HORI, Yuji.Techniques de l'ingénieur. Sciences fondamentales. 2005, Vol AFP1, Num RE35, RE35.1-RE35.6Article

DNA-Directed Assembly of Nanocomponents for Nanoelectronics, Nanophotonics and NanosensingKIEHL, Richard A.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67680Z.1-67680Z.7, issn 0277-786X, isbn 978-0-8194-6928-1, 1VolConference Paper

A Simple Approach to Quantum Confinement in Tunneling Field-Effect TransistorsPADILLA, J. L; GAMIZ, F; GODOY, A et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1342-1344, issn 0741-3106, 3 p.Article

Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientationsVAN DER STEEN, Jan-Laurens P. J; ESSENI, David; PALESTRI, Pierpaolo et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 8, pp 1843-1851, issn 0018-9383, 9 p.Article

Patterns under quantum confined Stark effectBONILLA, L. L; KOCHELAP, V. A; VELASCO, C. A et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 31, pp L539-L546, issn 0953-8984Article

Strong quantum-confined Stark effect in germanium quantum-well structures on siliconKUO, Yu-Hsuan; YONG KYU LEE; YANGSI GE et al.Nature (London). 2005, Vol 437, Num 7063, pp 1334-1336, issn 0028-0836, 3 p.Article