kw.\*:("r-shaped gate")
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Fabrication of 0.15-μm Γ-shaped gate In0.52Al0.48As /In0.6Ga0.4As metamorphic HEMTs using DUV lithography and tilt dry-etching techniqueLIEN, Yi-Chung; CHEN, Szu-Hung; YI CHANG, Edward et al.IEEE electron device letters. 2007, Vol 28, Num 2, pp 93-95, issn 0741-3106, 3 p.Article