A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory DevicesYANG LU; BIN GAO; YIHAN FU et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 306-308, issn 0741-3106, 3 p.Article

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching BehaviorsCHEN, B; GAO, B; SHENG, S. W et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 282-284, issn 0741-3106, 3 p.Article

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching MemoryBIN GAO; HAOWEI ZHANG; KWONG, Dim-Lee et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 276-278, issn 0741-3106, 3 p.Article

Nanometer-Scale HfO_x RRAMZHIPING ZHANG; YI WU; WONG, H.-S. Philip et al.IEEE electron device letters. 2013, Vol 34, Num 8, pp 1005-1007, issn 0741-3106, 3 p.Article

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface LayerHANGBING LV; HAIJUN WAN; TINGAO TANG et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 978-980, issn 0741-3106, 3 p.Article

Low-Frequency Noise in Oxide-Based (TiN/HfO_x/Pt) Resistive Random Access Memory CellsFANG, Z; YU, H. Y; CHROBOCZEK, J. A et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 3, pp 850-853, issn 0018-9383, 4 p.Article

Ni Electrode Unipolar Resistive RAM Performance Enhancement by AlO_y Incorporation Into HfO_x Switching DielectricsTRAN, X. A; YU, H. Y; GAO, B et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1290-1292, issn 0741-3106, 3 p.Article

Improvement of Resistive Switching Characteristics in SrZrO₃ Thin Films With Embedded Cr LayerLIN, Chih-Yang; LIN, Meng-Han; WU, Ming-Chi et al.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1108-1111, issn 0741-3106, 4 p.Article

Effect of oxygen concentration on characteristics of NiO_x-based resistance random access memoryLEE, Ming-Daou; HO, Chia-Hua; LO, Chi-Kuen et al.IEEE transactions on magnetics. 2007, Vol 43, Num 2, pp 939-942, issn 0018-9464, 4 p., 2Conference Paper

Record Low-Power Organic RRAM With Sub-20-nA Reset CurrentWENLIANG BAI; RU HUANG; YIMAO CAI et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 223-225, issn 0741-3106, 3 p.Article

A High-Yield HfO_x-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article

Reset Instability in Cu/ZrO₂:Cu/Pt RRAM DeviceYINGTAO LI; SHIBING LONG; MING LIU et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 363-365, issn 0741-3106, 3 p.Article

Highly Stable Radiation-Hardened Resistive-Switching MemoryYAN WANG; HANGBING LV; WENTAI LIAN et al.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1470-1472, issn 0741-3106, 3 p.Article

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss EffectBING CHEN; JIN FENG KANG; DIM LEE KWONG et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1292-1294, issn 0741-3106, 3 p.Article

Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled RegimeRAGHAVAN, N; PEY, K. L; LI, X et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 716-718, issn 0741-3106, 3 p.Article

A Comprehensive Study of the Resistive Switching Mechanism in Al/TiO_x/TiO₂/Al-Structured RRAMKIM, Sungho; CHOI, Yang-Kyu.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 12, pp 3049-3054, issn 0018-9383, 6 p.Article

Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped SrZrO₃ Thin FilmsLIN, Chun-Chieh; LIN, Chih-Yang; LIN, Meng-Han et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 12, pp 3146-3151, issn 0018-9383, 6 p.Article

Cycle-to-Cycle Intrinsic RESET Statistics in HfO₂-Based Unipolar RRAM DevicesSHIBING LONG; XIAOJUAN LIAN; TIANCHUN YE et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 623-625, issn 0741-3106, 3 p.Article

Ni-Containing Electrodes for Compact Integration of Resistive Random Access Memory With CMOSWANG, X. P; FANG, Z; CHEN, Z. X et al.IEEE electron device letters. 2013, Vol 34, Num 4, pp 508-510, issn 0741-3106, 3 p.Article

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting FilamentHAITAO SUN; HANGBING LV; QI LIU et al.IEEE electron device letters. 2013, Vol 34, Num 7, pp 873-875, issn 0741-3106, 3 p.Article

Postcycling LRS Retention Analysis in HfO₂/Hf RRAM 1T1R DeviceYANG YIN CHEN; DEGRAEVE, Robin; GOVOREANU, Bogdan et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 626-628, issn 0741-3106, 3 p.Article

Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiO_x-Based Resistive-Switching Memory DevicesLEE, Jung-Kyu; CHO, In-Tak; KWON, Hyuck-In et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 1063-1065, issn 0741-3106, 3 p.Article

Balancing SET/RESET Pulse for > 10¹⁰ Endurance in HfO₂/Hf 1T1R Bipolar RRAMYANG YIN CHEN; GOVOREANU, Bogdan; ALTIMIME, Laith et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3243-3249, issn 0018-9383, 7 p.Article

Al₂O₃-Based RRAM Using Atomic Layer Deposition (ALD) With 1-μA RESET CurrentYI WU; LEE, Byoungil; PHILIP WONG, H.-S et al.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1449-1451, issn 0741-3106, 3 p.Article

Resistive switching mechanisms of V-doped SrZrO₃ memory filmsLIN, Chun-Chieh; TU, Bing-Chung; LIN, Chao-Cheng et al.IEEE electron device letters. 2006, Vol 27, Num 9, pp 725-727, issn 0741-3106, 3 p.Article