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Resistive Switching in CeO_x Films for Nonvolatile Memory ApplicationXIAO SUN; BING SUN; LIFENG LIU et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 334-336, issn 0741-3106, 3 p.Article

Self-Rectifying Resistive-Switching Device With a-Si/WO₃ BilayerHANGBING LV; YINGTAO LI; QI LIU et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 229-231, issn 0741-3106, 3 p.Article

A High-Yield HfO_x-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article

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Co-Occurrence of Threshold Switching and Memory Switching in Pt/NbO_x/Pt Cells for Crosspoint Memory ApplicationsXINJUN LIU; SADAF, Sharif Md; SON, Myungwoo et al.IEEE electron device letters. 2012, Vol 33, Num 2, pp 236-238, issn 0741-3106, 3 p.Article

Formation and Characterization of Filamentary Current Paths in HfO₂-Based Resistive Switching StructuresPALUMBO, F; MIRANDA, E; GHIBAUDO, G et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 1057-1059, issn 0741-3106, 3 p.Article

The Role of CuAlO Interface Layer for Switching Behavior of Al/Cu_xO/Cu Memory DeviceHANGBING LV; TINGAO TANG.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1464-1466, issn 0741-3106, 3 p.Article

Resistive Switching in HfO₂ Probed by a Metal-Insulator-Semiconductor Bipolar TransistorYALON, E; GAVRILOV, A; COHEN, S et al.IEEE electron device letters. 2012, Vol 33, Num 1, pp 11-13, issn 0741-3106, 3 p.Article

Switching Behavior in Rare-Earth Films Fabricated in Full Room TemperaturePAN, Tung-Ming; LU, Chih-Hung.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 956-961, issn 0018-9383, 6 p.Article

Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector―One Resistor Crossbar ArrayLO, Chun-Li; HOU, Tuo-Hung; CHEN, Mei-Chin et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 420-426, issn 0018-9383, 7 p.Article

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO₃-Based Memory FilmsLIN, Meng-Han; WU, Ming-Chi; LIN, Chen-Hsi et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1801-1808, issn 0018-9383, 8 p.Article

High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO₂ on SiliconCHENGQING HU; MCDANIEL, Martin D; EKERDT, John G et al.IEEE electron device letters. 2013, Vol 34, Num 11, pp 1385-1387, issn 0741-3106, 3 p.Article