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Self-Rectifying Resistive-Switching Device With a-Si/WO3 BilayerHANGBING LV; YINGTAO LI; QI LIU et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 229-231, issn 0741-3106, 3 p.Article

Self-Rectifying Effect in Resistive Switching Memory Using Amorphous InGaZnOLEE, Jin-Woo; KWON, Hyeon-Min; KIM, Myeong-Ho et al.Journal of electronic materials. 2014, Vol 43, Num 5, pp 1384-1388, issn 0361-5235, 5 p.Article

A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi ElectrodeTRAN, X. A; ZHU, W. G; YU, H. Y et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 585-587, issn 0741-3106, 3 p.Article

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