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Physical Foundation of a Recently Proposed Schottky-Contact ModelSCHROEDER, Dietmar.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 3, pp 874-875, issn 0018-9383, 2 p.Article

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Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash MemoriesMONZIO COMPAGNONI, Christian; GHIDOTTI, Michele; LACAITA, Andrea L et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 984-986, issn 0741-3106, 3 p.Article

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Coherent kinks in high-power ridge waveguide laser diodesACHTENHAGEN, Martin; HARDY, Amos A; HARDER, Chnstoph S et al.Journal of lightwave technology. 2006, Vol 24, Num 5, pp 2225-2232, issn 0733-8724, 8 p.Article

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A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor ModelingBATAS, Daniel; FIEDLER, Horst.IEEE transactions on nanotechnology. 2011, Vol 10, Num 2, pp 250-255, issn 1536-125X, 6 p.Article

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Two-dimensional modeling of front contact silicon solar cellsLUQUE, A; TOBIAS, I; GIDON, P et al.Progress in photovoltaics. 2004, Vol 12, Num 7, pp 503-516, issn 1062-7995, 14 p.Article

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Analysis and optimum design of distributed feedback lasers using coupled-power theoryWANG, J.-Y; CADA, M.IEEE journal of quantum electronics. 2000, Vol 36, Num 1, pp 52-58, issn 0018-9197Article

Monte Carlo calculation of velocity-field characteristics in II-VI compound semiconductorsDUTTA, A; MALLICK, P. S; MUKHOPADHYAY, D et al.International journal of electronics. 1998, Vol 84, Num 3, pp 203-214, issn 0020-7217Article

On the validity of quantum hydrodynamics for describing antidot array devicesBARKER, J. R; FERRY, D. K.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A135-A139, issn 0268-1242Conference Paper

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An Analytical I-V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot EffectsROLDAN, J. B; GAMIZ, Francisco; JIMENEZ-MOLINOS, F et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 11, pp 2925-2933, issn 0018-9383, 9 p.Article

Physics of Carrier Backscattering in One-and Two-Dimensional NanotransistorsKIM, Raseong; LUNDSTROM, Mark S.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 1, pp 132-139, issn 0018-9383, 8 p.Article

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