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A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness AsymmetryJANDHYALA, Srivatsava; KASHYAP, Rutwick; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1002-1007, issn 0018-9383, 6 p.Article
Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJANDHYALA, Srivatsava; ABRAHAM, Aby; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 7, pp 1974-1979, issn 0018-9383, 6 p.Article
Large-Signal Model for Independent DG MOSFETPANKAJ KUMAR THAKUR; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 46-52, issn 0018-9383, 7 p.Article
Termination-discriminatory pricing in European mobile communications marketsGERPOTT, Torsten J.International journal of mobile communications (print). 2008, Vol 6, Num 5, pp 564-586, issn 1470-949X, 23 p.Article