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An Improved Si Tunnel Field Effect Transistor With a Buried Strained Si_1―xGe_x SourceZHAO, Q. T; HARTMANN, J. M; MANTL, S et al.IEEE electron device letters. 2011, Vol 32, Num 11, pp 1480-1482, issn 0741-3106, 3 p.Article

Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I EstimationMOOKERJEA, Saurabh; KRISHNAN, Ramakrishnan; DATTA, Suman et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 9, pp 2092-2098, issn 0018-9383, 7 p.Article

Influence of Inversion Layer on Tunneling Field-Effect TransistorsLEE, Woojun; WOOYOUNG CHOI.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1191-1193, issn 0741-3106, 3 p.Article

Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETsDAMRONGPLASIT, Nattapol; SHIN, Changhwan; SUNG HWAN KIM et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 10, pp 3541-3548, issn 0018-9383, 8 p.Article

Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETsPADILLA, José L; GAMIZ, Francisco; GODOY, Andrés et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3205-3211, issn 0018-9383, 7 p.Article

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Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling TransistorsTEHERANI, James T; AGARWAL, Sapan; YABLONOVITCH, Eli et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 298-300, issn 0741-3106, 3 p.Article

Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal ProcessNAH, Junghyo; LIU, En-Shao; VARAHRAMYAN, Kamran M et al.IEEE electron device letters. 2010, Vol 31, Num 12, pp 1359-1361, issn 0741-3106, 3 p.Article

Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon NanowiresCHEN, Z. X; YU, H. Y; SINGH, N et al.IEEE electron device letters. 2009, Vol 30, Num 7, pp 754-756, issn 0741-3106, 3 p.Article

Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs)MIN JIN LEE; WOO YOUNG CHOI.Solid-state electronics. 2011, Vol 63, Num 1, pp 110-114, issn 0038-1101, 5 p.Article

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistorsSANDOW, C; KNOCH, J; URBAN, C et al.Solid-state electronics. 2009, Vol 53, Num 10, pp 1126-1129, issn 0038-1101, 4 p.Article

Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFETDAMRONGPLASIT, Nattapol; SUNG HWAN KIM; KING LIU, Tsu-Jae et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 184-186, issn 0741-3106, 3 p.Article

Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening LengthJHAN, Yi-Ruei; WU, Yung-Chun; HUNG, Min-Feng et al.IEEE electron device letters. 2013, Vol 34, Num 12, pp 1482-1484, issn 0741-3106, 3 p.Article

A Simple Approach to Quantum Confinement in Tunneling Field-Effect TransistorsPADILLA, J. L; GAMIZ, F; GODOY, A et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1342-1344, issn 0741-3106, 3 p.Article

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling CurrentGUO, Peng-Fei; YANG, Li-Tao; YUE YANG et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 981-983, issn 0741-3106, 3 p.Article

CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With < 50-mV/decade Subthreshold SwingGANDHI, Ramanathan; ZHIXIAN CHEN; SINGH, Navab et al.IEEE electron device letters. 2011, Vol 32, Num 11, pp 1504-1506, issn 0741-3106, 3 p.Article

Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect TransistorsCHO, Seongjae; JAE SUNG LEE; KYUNG ROK KIM et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 12, pp 4164-4171, issn 0018-9383, 8 p.Article

Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILCCHEN, Yi-Hsuan; YEN, Li-Chen; CHANG, Tien-Shun et al.IEEE electron device letters. 2013, Vol 34, Num 8, pp 1017-1019, issn 0741-3106, 3 p.Article

The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in p⁺-SiGe/n⁺-SiGe Junctions in Forward and Reverse BiasesLI, Jiun-Yun; STURM, James C.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2479-2484, issn 0018-9383, 6 p.Article

Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel TransistorsSARWAT SYLVIA, Somaia; ABUL KHAYER, M; ALAM, Khairul et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 2996-3001, issn 0018-9383, 6 p.Article

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect TransistorsDEY, Anil W; BORG, B. Mattias; GANJIPOUR, Bahram et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 211-213, issn 0741-3106, 3 p.Article