kw.\*:(%22ALUMINIUM GALLIUM ARSENIDES MIXED%22)
Results 1 to 25 of 196129
Selection :
FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article
P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article
(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article
GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article
HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article
DETERMINATION OF MINORITY CARRIER LIFETIME AND EFFECTIVE BACK SURFACE RECOMBINATION VELOCITY IN BSF SILICON SOLAR CELLS FROM TRANSIENT MEASUREMENTSJAIN SC; AGARWAL SK; RAY UC et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 365-367; BIBL. 11 REF.Article
GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article
SINGLE-MODE SEMICONDUCTOR INJECTION LASERS FOR OPTICAL FIBER COMMUNICATIONSNAKAMURA M; TSUJI S.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 994-1005; BIBL. 95 REF.Article
"NONWAVEGUIDE-MODE SEMICONDUCTOR INJECTION LASERSBOGATOV AP; ELISEEV PG; MANKO MA et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 252-255; BIBL. 10 REF.Article
IN0,53)GA0,47)AS CONTACT LAYER FOR 1,3 MU M LIGHT-EMITHING DIODESTEMKIN H; CHIN AK; DIGIUSEPPE MA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 703-705; BIBL. 8 REF.Article
CHARACTERISTICS AND ANALYSIS OF CHANNELED SUBSTRATE NARROW STRIPE GAAS/GAALAS LASERSCURTIS JP; PLUMB RG; GOODWIN AR et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3444-3449; BIBL. 9 REF.Article
MOVPE GROWTH OF GA1-XALXAS-GAAS QUANTUM WELL HETEROSTRUCTURESFRIJLINK PM; MALUENDA J.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 2; PP. L574-L576; BIBL. 4 REF.Article
INGAAS/INGAASP AVALANCHE PHOTODIODES AND ANALYSIS OF INTERNAL QUANTUM EFFICIENCYTAKANASHI Y; HORIKOSHI Y.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1271-1278; BIBL. 15 REF.Article
AN ANALYTICAL SOLUTION OF THE LATERAL CURRENT SPEADING AND DIFFUSION PROBLEM IN NARROW OXIDE STRIPE (GAAL)AS/GAAS DH LASERSLENGYEL G; MEISSNER P; PATZAK E et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 4; PP. 464-471; BIBL. 25 REF.Article
LUMINESCENCE PROPERTIES OF GAAS-GA1-XALXAS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXYPETROFF PM; WEISBUCH C; DINGLE R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 965-967; BIBL. 14 REF.Article
MAGNETOSTATIC FIELD EFFECT ON THRESHOLD CURRENT IN A GAAS/AL Y GA1-YAS DOUBLE-HETEROSTRUCTURE LASERHSIEH HC; LEE GY.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4414-4417; BIBL. 16 REF.Article
MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATIONMORKOC H; DRUMMOND TJ; THORNE RE et al.1981; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L913-L916; BIBL. 14 REF.Article
HETEROJONCTIONS GA1-XALXAS/GAAS REALISES PAR EPITAXIE LIQUIDE AVEC ENTRAINEMENT CONTROLE DE SOLUTION: CROISSANCE ET CARACTERISATIONBENOIT JACQUES.1979; ; FRA; DA. 1979; DGRST/77 7 1001; 27 P.; 30 CM; BIBL. 11 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport
IMPURITY PHOTOLUMINESCENCE IN GAAS/GA1-XALXAS MULTIPLE QUANTUM WELLSLAMBERT B; DEVEAUD B; REGRENY A et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 6; PP. 443-446; BIBL. 10 REF.Article
NUMERICAL SIMULATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; ASATOURIAN R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 403-406; BIBL. 9 REF.Article
HIGH-SPEED GAALAS-GAAS HETERO-JUNCTION BIPOLAR TRANSISTORS WITH NEAR-BALLISTIC OPERATIONANKRI D; SCHAFF WJ; SMITH P et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 147-149; BIBL. 6 REF.Article
TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONSDELAGEBEAUDEUF D; DELESCLUSE P; ETIENNE P et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 85-87; BIBL. 9 REF.Article
TEMPERATURE DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1,3 MU M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERSDUTTA NK; NELSON RJ.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 5; PP. 871-878; BIBL. 51 REF.Article
DEPOSITION OF III-V COMPOUND SEMICONDUCTOR LAYERS FROM HALIDE SYSTEMSHEYEN M; BALK P.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 291-306; BIBL. 22 REF.Conference Paper
THE CHANNELING AVALANCHE PHOTODIODE: A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N JUNCTION DETECTORCAPASSO F.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1388-1395; BIBL. 29 REF.Article
