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ZUM WACHSTUM VON AIIIBV-HALBLEITERN AUS NICHTSTOECHIOMETRISCHEN SCHMELZEN (II). DOTIERUNG VON GAAS UND GA1-XALXAS MIT ZINK = CROISSANCE DE SEMICONDUCTEURS AIIIBV A PARTIR DE PRODUITS DE FUSION NON STOECHIOMETRIQUES (II). DOPAGE DE GAAS ET GA1-XALXAS PAR LE ZINCJACOBS K; JACOBS B; BUTTER E et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 11; PP. 1209-1217; ABS. ANGL.; BIBL. 11 REF.Serial Issue

THE GROWTH OF A GAAS-GAALAS SUPERLATTICECHANG LL; ESAKI L; HOWARD WE et al.1973; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1973; VOL. 10; NO 1; PP. 11-16; BIBL. 19 REF.Serial Issue

THE VARIATION OF THE SOLID COMPOSITION DURING THE LPE GROWTH OF GA1-XALXASRADO WG; CRAWLEY RL.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1779-1780; BIBL. 5 REF.Serial Issue

HERSTELLUNG UND PHYSIKALISCHE GRUNDCHARAKTERISIERUNG VON AL1-XGAXAS-KRISTALLEN = PREPARATION ET CARACTERISATION PHYSIQUE FONDAMENTALE DES CRISTAUX AL1-XGAXASFISCHER P; KUHN G; BINDEMANN R et al.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 167-176; ABS. ANGL.; BIBL. 28 REF.Serial Issue

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

PREPARATION DE DEUX COMPOSES DANS LE SYSTEME CA-GA-AS: CA5GA2AS6 ET CA4GA3AS5VERDIER P; MAUNAYE M; MARCHAND R et al.1975; C.R. ACAD. SCI., C; FR.; DA. 1975; VOL. 281; NO 2; PP. 457-459; ABS. ANGL.; BIBL. 3 REF.Article

ESTIMATION OF THE DEBYE TEMPERATURE OF DIAMOND-LIKE SEMICONDUCTING COMPOUNDS BY MEANS OF THE LINDEMANN RULEDEUS P; SCHNEIDER HA; VOLAND U et al.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 8; PP. 941-948; ABS. GER; BIBL. 25 REF.Article

SHORT RANGE ORDER PARAMETERS FOR TERNARY ZINC BLENDE SUBSTITUTIONAL SOLID SOLUTIONSBRUHL HG; SCHMIDT W.1973; KRISTALL U. TECH.; DTSCH.; DA. 1973; VOL. 8; NO 1-3; PP. 127-131; ABS. ALLEM.; BIBL. 11 REF.Serial Issue

SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

P-GAAS/P-GA1-XALXAS ISOTYPE HETEROJUNCTIONS IN DOUBLE HETEROSTRUCTURE LASER MATERIALHAKKI BW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6054-6058; BIBL. 28 REF.Article

(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article

GAIN SUPPRESSION IN GAAS/ALGAAS TJS LASERSKAWANISHI H; PETERSEN PE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 823-824; BIBL. 8 REF.Article

TRANSITIONS INDIRECTES ENTRE BANDES DANS LES SOLUTIONS SOLIDES GA1-YINYP1-XASXSMIRNOVA GF.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 9; PP. 1468-1470; BIBL. 7 REF.Article

GALLIUM ARSENIDE AND RELATED COMPOUNDS. PROCEEDINGS OF THE 4TH INTERNATIONAL SYMPOSIUM. BOULDER, COLORADO, 25-27 SEPTEMBER 19721973; INST. PHYS. CONF. SER., LONDON; G.B.; DA. 1973; NO 17; PP. (309 P.); BIBL. DISSEM.Conference Paper

GROWTH OF ALGAAS-GAAS HETEROSTRUCTURES FROM STEP-COOLED SOLUTIONS.RODE DL; SOBERS RG.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 1; PP. 61-64; BIBL. 19 REF.Article

MODIFICATION OF THE VIRTUAL-CRYSTAL APPROXIMATION FOR TERNARY III-V COMPOUNDSPOROD W; FERRY DK.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 4; PP. 2587-2589; BIBL. 8 REF.Article

VARIATION DE LA STRUCTURE DE BANDES DE LA SOLUTION SOLIDE DE GE2X(GAAS)1-X EN FONCTION DU DEGRE D'ORDREGUBANOV AI; POLUBOTKO AM.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1848-1851; BIBL. 5 REF.Article

NEW APPARATUS FOR MULTI-LAYER LIQUID PHASE EPITAXY.KAWAMURA K; YAMAMOTO T.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 2; PP. 157-160; BIBL. 9 REF.Article

MULTIPLE LAYER (ALGA) AS-GAAS HETEROJUNCTION LASER DIODES: SYNTHESIS AND MODE CONTROL.LOCKWOOD HF; KRESSEL H.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 97-105; BIBL. 19 REF.Article

REDUCTION OF AL CONTAMINATION IN THE GAAS LAYER OF LPE-GROWN ALALPHA GA1-XAS-GAAS HETEROSTRUCTURES.KOPF L; SUMSKI S.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 3; PP. 365-366; BIBL. 4 REF.Article

EPITAXIAL GROWTH OF (ALGA)AS AND GAAS ON (ALGA)AS SUBSTRATE.HORIKOSHI Y; FURUKAWA Y.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 11; PP. 1727-1732; BIBL. 5 REF.Article

ORIENTED GROWTH OF WHISKERS OF AIIIBV COMPOUNDS BY VLS-MECHANISM.GIVARGIZOV EI.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 5; PP. 473-484; ABS. RUSSE; BIBL. 19 REF.Article

NEAR-EQUILIBRIUM LPE GROWTH OF GAAS-GA1-X ALX-AS DOUBLE HETEROSTRUCTURES.DAWSON LR.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 86-96; BIBL. 16 REF.Article

MEASUREMENT OF GA AND AL IN A MOLECULAR-BEAM EPITAXY CHAMBER BY ATOMIC ABSORPTION SPECTROMETRY (AAS).KOMETANI TY; WIEGMANN W.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 933-936; BIBL. 11 REF.Conference Paper

EPITAXIE EN PHASE LIQUIDE DES SEMI-CONDUCTEURSBOLKHOVITYANOV YU B.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 28-41; BIBL. 44 REF.Article

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