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Results 1 to 25 of 289656

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SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

FORWARD BIAS VOLTAGE CHARACTERISTICS FOR (GAAL)AS AND (GAIN)(ASP) LASERSTHOMAS B; KAR A; HENSHALL GD et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 312-315; BIBL. 5 REF.Article

ION-IMPLANTED IN0,53)GA0,47)AS/IN0,48)AS LATERAL PNP TRANSISTORSTABATABAIE ALAVI K; CHOUDHURY ANMM; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 379-381; BIBL. 12 REF.Article

IN0,53)GA0,47)AS CONTACT LAYER FOR 1,3 MU M LIGHT-EMITHING DIODESTEMKIN H; CHIN AK; DIGIUSEPPE MA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 703-705; BIBL. 8 REF.Article

CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURESMORGAN DV; BOARD K; WOOD CEC et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 251-260; ABS. GER; BIBL. 5 REF.Article

INGAAS/INGAASP AVALANCHE PHOTODIODES AND ANALYSIS OF INTERNAL QUANTUM EFFICIENCYTAKANASHI Y; HORIKOSHI Y.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 7; PP. 1271-1278; BIBL. 15 REF.Article

MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILINGPEOPLE R; WECHT KW; ALAVI K et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 118-120; BIBL. 10 REF.Article

SINGLE-MODE SEMICONDUCTOR INJECTION LASERS FOR OPTICAL FIBER COMMUNICATIONSNAKAMURA M; TSUJI S.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 994-1005; BIBL. 95 REF.Article

AL048IN052AS/GA047IN053AS/AL048IN052 AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65 MU MTSANG WT.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3861-3864; BIBL. 16 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

MEASUREMENT OF RADIATIVE RECOMBINATION COEFFICIENT AND CARRIER LEAKAGE IN 1.3 MU M INGAASP LASERS WITH LIGHTLY DOPED ACTIVE LAYERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1108-1110; BIBL. 13 REF.Article

BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERSSUGIMURA A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 21-23; BIBL. 30 REF.Article

CW LASER ACTIVATED FLOW APPLIED TO THE PLANARIZATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURESDELFINO M; REIFSTECK TA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 715-717; BIBL. 6 REF.Article

SUPPRESSING AL AUTODIFFUSION IN IMPLANTATION AMORPHIZED AND RECRYSTALLIZED SILICON ON SAPPHIRE FILMSREEDY RE; SIGMON TW; CHRISTEL LA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 707-709; BIBL. 7 REF.Article

LASER-FORMED CONNECTIONS USING POLYIMIDERAFFEL JI; FREIDIN JF; CHAPMAN GH et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 705-706; BIBL. 6 REF.Article

TEMPERATURE DEPENDENCE OF THE LASING CHARACTERISTICS OF THE 1,3 MU M INGAASP-INP AND GAAS-AL0.36GA0.64AS DH LASERSDUTTA NK; NELSON RJ.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 5; PP. 871-878; BIBL. 51 REF.Article

DEPOSITION OF III-V COMPOUND SEMICONDUCTOR LAYERS FROM HALIDE SYSTEMSHEYEN M; BALK P.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 291-306; BIBL. 22 REF.Conference Paper

INGAASP/INP WAVELENGTH DIVISION SOLAR CELLSITO N; UESUGI T; SAKAI S et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; PP. 121-125; BIBL. 9 REF.Conference Paper

PHOTOLUMINESCENCE D'UNE HETEROJONCTION DOUBLE DONT ON EXCITE L'EMETTEUR A LARGE BANDEGARBUZOV DZ; KHALFIN VB; TULASHVILI EH V et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 242-246; BIBL. 4 REF.Article

"NONWAVEGUIDE-MODE SEMICONDUCTOR INJECTION LASERSBOGATOV AP; ELISEEV PG; MANKO MA et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 6; PP. 252-255; BIBL. 10 REF.Article

HETERO-CELLULE PHOTOELECTRIQUE IN2O3 - COMPOSES AIIBIVC2VABDURAKHIMOV AA; RUD YU V; SANIN KV et al.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 325-328; BIBL. 9 REF.Article

ETCH RATES FOR TWO MATERIAL SELECTIVE ETCHES IN THE INGAASP/INP SYSTEMCONWAY KL; DENTAI AG; CAMPBELL JC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1836-1838; BIBL. 6 REF.Article

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