On the gettering efficiency of buried layers in dielectrically insulated structuresKISSINGER, G; TITTELBACH-HELMRICH, K; KNOPKE, J et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 1, pp K141-K143, issn 0031-8965Article

A CMOS bandgap reference with correction for device-to-device variationTADEPARTHY, Preetam.IEEE International Symposium on Circuits and Systems. 2004, pp 397-400, isbn 0-7803-8251-X, 4 p.Conference Paper

A PMOSFET ESD failure caused by localized charge injectionCHUN, Jung-Hoon; DUVVURY, Charvaka; BOSELLI, Gianluca et al.IEEE international reliability physics symposium. 2004, pp 405-411, isbn 0-7803-8315-X, 1Vol, 7 p.Conference Paper

Variations of high-level injection knee voltage in lateral p-n-p transistorsDIAS, J. A. S; JORGE, A. M.International journal of electronics. 1993, Vol 74, Num 4, pp 567-570, issn 0020-7217Article

Design and optimization of a low-power and very-high-performance 0.25 μm advanced pnp bipolar processDJEZZAR, B.Microelectronics journal. 1998, Vol 29, Num 1-2, pp 13-19, issn 0959-8324Article

Impact of low-temperature transient-enhanced diffusion of dopants in siliconBACCUS, B.Solid-state electronics. 1992, Vol 35, Num 8, pp 1045-1049, issn 0038-1101Article

On the recombination in the quasi-neutral base of polysilicon emitter transistors with interfacial oxidesWIJBURG, R. C; RAGAY, F. W.Solid-state electronics. 1991, Vol 34, Num 12, pp 1469-1471, issn 0038-1101Article

On the mechanisms of low-frequency noise in vertical silicon pnp BJSsPENG CHENG; ENHAI ZHAO; CRESSLER, John D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66000C.1-66000C.9, issn 0277-786X, isbn 978-0-8194-6737-9, 1VolConference Paper

A complementary bipolar technology on SOI featuring 50GHz NPN and 35GHz PNP devices for high performance RF applicationsNIGRIN, S; WILSON, M. C; THOMAS, S et al.IEEE International SOI conference. 2002, pp 155-157, isbn 0-7803-7439-8, 3 p.Conference Paper

A translinear circuit for sinusoidal frequency multiplicationMUHAMMAD TAHER ABUELMA'ATTI; SOFIAN MUSTAFA ABED.International journal of electronics. 1999, Vol 86, Num 1, pp 35-41, issn 0020-7217Article

Modélisation des effets des radiations ionisantes sur les composants bipolaires = Modelling of total dose effects on bipolar transistorsMontagner, Xavier; Touroul, Andre.1999, 218 p.Thesis

MODELLA : a new physics-based compact model for lateral p-n-p transistorsO'HARA, F. G; VAN DEN BIESEN, J. J. H; DE GRAAFF, H. C et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 11, pp 2553-2561, issn 0018-9383Article

On the perimeter base leakage of double-poly self-aligned p-n-p transistorsPONG-FEI LU; WARNOCK, J. D.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2823-2826, issn 0018-9383Article

Polyimide-related design considerations in a bipolar technologyHOOK, T. B.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 7, pp 1714-1718, issn 0018-9383, 5 p.Article

Self-aligned vertical p-n-p transistor : device characterization from room to cryogenic temperaturesKUANG, J. B; RATANAPHANYARAT, S; CHU, S. F et al.Solid-state electronics. 1992, Vol 35, Num 9, pp 1203-1208, issn 0038-1101Article

pnp resonant tunneling light emitting transistorGENOE, J; VAN HOOF, C; FOBELETS, K et al.Applied physics letters. 1992, Vol 61, Num 9, pp 1051-1053, issn 0003-6951Article

The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistorsPOST, I. R. C; ASHBURN, P.IEEE electron device letters. 1992, Vol 13, Num 8, pp 408-410, issn 0741-3106Article

The importance of the non-quasi-static bipolar transistor model for circuit applicationsMENG-KAI CHEN.IEEE journal of solid-state circuits. 1991, Vol 26, Num 2, pp 153-160, issn 0018-9200, 8 p.Article

Modélisation de la logique à injection I2L dans le procédé à isolement par oxyde SUBILO N, application à l'optimisation des circuits = Modelisation of the integrated injection logic in an oxide isolated process SUBILO N, application to the circuits optimisationParpaleix, Jean; Bloyet, Daniel.1987, 112 p.Thesis

PROPRIETE D'UN INVERSEUR PNP-NPNJANKE W.1976; ZESZ. NAUK POLITECH. GDANSK., ELEKTRON.; POLSKA; DA. 1976; NO 38; PP. 13-22; ABS. ANGL. RUSSE; BIBL. 10 REF.Article

Practical aspects of lateral and substrate PNP fabrication with a BICMOS processSPARKS, D. R; FRUTH, J; CHRISTENSEN, J et al.Microelectronic engineering. 1992, Vol 18, Num 3, pp 225-235, issn 0167-9317Article

DIFFUSION NOISE IN PNP-BARITT-DIODES.HARTH W; SCHIRM L.1974; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1974; VOL. 28; NO 10; PP. 439-441; BIBL. 10 REF.Article

Modeling of currents in a vertical p-n-p transistor with extremely Shallow emitterPONG-FEI LU; TZE-CHIANG CHEN; SACCAMANGO, M. J et al.IEEE electron device letters. 1989, Vol 10, Num 5, pp 232-235, issn 0741-3106Article

A new lateral MOS-controlled thyristorDARWISH, M. N.IEEE electron device letters. 1990, Vol 11, Num 6, pp 256-257, issn 0741-3106Article

Les élections du 30 mars 1993 à la Jamaïque : la fin du clientélismeROCHELEMAGNE-ROBSON, A.Elections et démocratie Amérique latine-Caraïbes. Annales des Pays d'Amérique Latine et des Caraïbes. 1995, Num 13, pp 241-253Book Chapter