Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)Roozeboom, F; Gusev, E.P; Chen, L.J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-396-2, XIV, 480 p, isbn 1-56677-396-2Conference Proceedings

Cluster ion beam process technologyYAMADA, Isao; TOYODA, Noriaki; MATSUO, Jiro et al.Proceedings - Electrochemical Society. 2003, pp 51-60, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Junction scaling for 90 NM and beyondHWANG, Jack; KENNEL, Hal; PACKAN, Paul et al.Proceedings - Electrochemical Society. 2003, pp 35-42, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Silicide scaling: Co, Ni or CoNi?LAUWERS, A; KITTL, J. A; AKHEYAR, A et al.Proceedings - Electrochemical Society. 2003, pp 167-176, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Charges in HFO₂ ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Atomic vapour deposition of complex high-K thin films for sub-90 NM CMOS devicesLINDNER, J; MIEDL, S; SCHUMACHER, M et al.Proceedings - Electrochemical Society. 2003, pp 459-464, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Ni-based silicides: Material issues for advanced CMOS applicationsKITTL, Jorge A; LAUWERS, Anne; CHAMIRIAN, Oxana et al.Proceedings - Electrochemical Society. 2003, pp 177-182, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Laser thermal processing for ultra-shallow junction formation: Experiment and modellingVENTURINI, J; HERNANDEZ, M; SARNET, T et al.Proceedings - Electrochemical Society. 2003, pp 131-136, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Effect of starting surface in atomic layer depositionHAUKKA, Suvi; TUOMINEN, Marko; VAINONEN-AHLGREN, Elizaveta et al.Proceedings - Electrochemical Society. 2003, pp 405-416, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper

Batch atomic layer deposition for MIM capacitorsDE BLANK, René; JAN SNIJDERS, Gert; BEULENS, Sjaak et al.Proceedings - Electrochemical Society. 2003, pp 225-229, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

Design of experiment on the CO salicide process: Impact of thickness and anneals on main CMOS parametersWACQUANT, F; REGNIER, C; BASSO, M.-T et al.Proceedings - Electrochemical Society. 2003, pp 191-196, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Ultrathin plasma nitrided oxide gate dielectrics for sub-100 nm generation CMOS technologyJEON, Joong; YEH, Ping; OGLE, Bob et al.Proceedings - Electrochemical Society. 2003, pp 287-292, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Application of high-K dielectrics in CMOS technology and emerging new technologyLIU, Rich; WU, Tai-Bor.Proceedings - Electrochemical Society. 2003, pp 207-216, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Evaluation of CMOS gate metal materials using in situ characterization techniquesCABRAL, C; LAVOIE, C; OZCAN, A. S et al.Proceedings - Electrochemical Society. 2003, pp 375-384, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Time-resolved analysis of flash-assist RTP thermal pulse progression in SOI and bulk silicon wafersELLION, Kiefer; MCCOY, S; CAMM, D. M et al.Proceedings - Electrochemical Society. 2003, pp 17-24, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Ultra-shallow implant anneal using a short wavelength flash light sourceWOO SIK YOO; KITAEK KANG.Proceedings - Electrochemical Society. 2003, pp 111-116, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

High-k dielectric processing for germanium channel MOSFETsMCINTYRE, Paul C; CHI, David; KIM, Hyoungsub et al.Proceedings - Electrochemical Society. 2003, pp 295-304, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Effect of thermal annealing on MIST-deposited HFSIO₄/SIO_X/SI structuresCHANG, K; LEE, D.-O; SHANMUGASUNDARAM, K et al.Proceedings - Electrochemical Society. 2003, pp 429-435, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Rapid thermal annealing of atomic layer deposited hafnium-silicate / poly-silicon layersRITTERSMA, Z. M; MASSOUBRE, D; TUOMINEN, M et al.Proceedings - Electrochemical Society. 2003, pp 273-280, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formationLERCH, W; PAUL, S; DOWNEY, D. F et al.Proceedings - Electrochemical Society. 2003, pp 43-49, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Dose loss and diffusion in BF₂ implanted silicon during rapid thermal annealingDOKUMACI, Omer; RONSHEIM, Paul; HEGDE, Suri et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Pathways for advanced transistors using hafnium-based oxides by atomic layer depositionLONDERGAN, Ana R; RAMANATHAN, Sasangan; WINKLER, Jereld et al.Proceedings - Electrochemical Society. 2003, pp 243-249, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Silicon damage and dopant behavior studies of rapidly thermally processed arsenic-implanted siliconGIRGINOUDI, D; GEORGOULAS, N; THANAILAKIS, A et al.Proceedings - Electrochemical Society. 2003, pp 397-402, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Advanced layer-by-layer deposition and annealing process for high-quality high-K dielectrics formationIWAMOTO, K; TOMINAGA, T; YASUDA, T et al.Proceedings - Electrochemical Society. 2003, pp 265-272, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

First principles modelling of the deposition process for high-K dielectric filmsELLIOTT, Simon D.Proceedings - Electrochemical Society. 2003, pp 231-242, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper